MT9126 Preliminary Information
8-50
* Exceeding these values may cause permanent damage. Functional operation under these conditions is not implied.
‡ Typical figures are at 25°C and are for design aid only: not guaranteed and not subject to production testing.
‡ Typical figures are at 25°C and are for design aid only: not guaranteed and not subject to production testing.
* DC Electrical Characteristics are over recommended temperature and supply voltage.
Absolute Maximum Ratings*
Parameter Symbol Min Max Units
1 Supply Voltage V
DD
-V
SS
-0.3 7.0 V
2 Voltage on any I/O pin V
i
| V
o
V
SS
-0.3 V
DD
+ 0.3 V
3 Continuous Current on any I/O pin I
i
| I
o
±20 mA
4 Storage Temperature T
ST
-65 150 °C
5 Package Power Dissipation P
D
500 mW
Recommended Operating Conditions - Voltages are with respect to ground (V
SS
) unless otherwise stated.
Characteristics Sym Min Typ
‡
Max Units Test Conditions
1 Supply Voltage V
DD
4.5 5.0 5.5 V
2 TTL Input High Voltage 2.4 V
DD
V 400mV noise margin
3 TTL Input Low Voltage V
SS
0.4 V 400mV noise margin
4 CMOS Input High Voltage 4.5 V
DD
V
5 CMOS Input Low Voltage V
SS
0.5 V
6 Operating Temperature T
A
-40 +85 °C
DC Electrical Characteristics - Voltages are with respect to ground (V
SS
) unless otherwise stated.
Characteristics Sym Min Typ
‡
Max Units Test Conditions
1 Supply Current I
CC
I
DD
5
100 µA
mA
PWRDN
= 0
PWRDN
= 1, clocks active
2 Input HIGH voltage (TTL) V
IH
2.0 V
3 Input LOW voltage (TTL) V
IL
0.8 V
4
M
C
L
K
Input HIGH voltage (CMOS) V
IHC
3.5 V
5 Input LOW voltage (CMOS) V
ILC
1.5 V
6 Input leakage current I
IH
/I
IL
0.1 10 µAV
IN
=V
SS
to V
DD
7 High level output voltage V
OH
2.4 V I
OL
=5.0mA
8 Low level output voltage V
OL
0.4 V I
OL
=5.0mA
9 High impedance leakage I
OZ
110µAV
IN
=V
SS
to V
DD
10 Output capacitance C
o
10 pF
11 Input capacitance C
i
8pF
12
P
W
R
D
N
Positive Threshold Voltage
Hysteresis
Negative Threshold Voltage
V+
V
H
V-
3.7
1.0
1.3
V
V
V
