MRF175GU MRF175GV
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS (1)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 100 mA) V
GS(th)
1.0 3.0 6.0 Vdc
Drain–Source On–Voltage (V
GS
= 10 V, I
D
= 5.0 A) V
DS(on)
0.1 0.9 1.5 Vdc
Forward Transconductance (V
DS
= 10 V, I
D
= 2.5 A) g
fs
2.0 3.0 — mhos
DYNAMIC CHARACTERISTICS (1)
Input Capacitance (V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz) C
iss
— 180 — pF
Output Capacitance (V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz) C
oss
— 200 — pF
Reverse Transfer Capacitance (V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz) C
rss
— 20 — pF
FUNCTIONAL CHARACTERISTICS — MRF175GV (2) (Figure 1)
Common Source Power Gain
(V
DD
= 28 Vdc, P
out
= 200 W, f = 225 MHz, I
DQ
= 2.0 x 100 mA)
G
ps
12 14 — dB
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 200 W, f = 225 MHz, I
DQ
= 2.0 x 100 mA)
η 55 65 — %
Electrical Ruggedness
(V
DD
= 28 Vdc, P
out
= 200 W, f = 225 MHz, I
DQ
= 2.0 x 100 mA,
VSWR 10:1 at all Phase Angles)
ψ
No Degradation in Output Power
NOTES:
1. Each side of device measured separately.
2. Measured in push–pull configuration.
Figure 1. 225 MHz Test Circuit
C1 — Arco 404, 8.0–60 pF
C2, C3, C7, C8 — 1000 pF Chip
C4, C9 — 0.1 µF Chip
C5 — 180 pF Chip
C6 — 100 pF and 130 pF Chips in Parallel
C10 — 0.47 µF Chip, Kemet 1215 or Equivalent
L1 — 10 Turns AWG #16 Enamel Wire, Close
L1 — Wound, 1/4″ I.D.
L2 — Ferrite Beads of Suitable Material for
L2 — 1.5–2.0 µH Total Inductance
Board material — .062″ fiberglass (G10),
Two sided, 1 oz. copper, ε
r
5
Unless otherwise noted, all chip capacitors
are ATC Type 100 or Equivalent.
R1 — 100 Ohms, 1/2 W
R2 — 1.0 k Ohm, 1/2 W
T1 — 4:1 Impedance Ratio RF Transformer.
T1 — Can Be Made of 25 Ohm Semirigid Coax,
T1 — 47–52 Mils O.D.
T2 — 1:9 Impedance Ratio RF Transformer.
T2 — Can Be Made of 15–18 Ohms Semirigid
T2 — Coax, 62–90 Mils O.D.
NOTE: For stability, the input transformer T1 should be loaded
NOTE: with ferrite toroids or beads to increase the common
NOTE: mode inductance. For operation below 100 MHz. The
NOTE: same is required for the output transformer.
BIAS 0– 6 V
R1
C3 C4
R2
C1 C2
T1
C5
D.U.T.
C6
T2
C7
L1
C8 C9
L2
C10
+
–
28 V
