1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
40 Vdc
Collector–Base Voltage V
CBO
40 Vdc
Emitter–Base Voltage V
EBO
12 Vdc
Collector Current — Continuous I
C
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
MMBT6427LT1 = 1V
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mAdc, V
BE
= 0)
V
(BR)CEO
40 —
Vdc
Collector–Base Breakdown Voltage
(I
C
= 100 Adc, I
E
= 0)
V
(BR)CBO
40 —
Vdc
Emitter–Base Breakdown Voltage
(I
C
= 10 Adc, I
C
= 0)
V
(BR)EBO
12 —
Vdc
Collector Cutoff Current
(V
CE
= 25 Vdc, I
B
= 0)
I
CES
— 1.0
µAdc
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
I
CBO
— 50
nAdc
Emitter Cutoff Current
(V
EB
= 10 Vdc, I
C
= 0)
I
EBO
— 50
nAdc
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
