1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–40 Vdc
Collector–Base Voltage V
CBO
–40 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
MMBT4403LT1 = 2T
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(3)
(I
C
= –1.0 mAdc, I
B
= 0)
V
(BR)CEO
–40 —
Vdc
Collector–Base Breakdown Voltage
(I
C
= –0.1 mAdc, I
E
= 0)
V
(BR)CBO
–40 —
Vdc
Emitter–Base Breakdown Voltage
(I
E
= –0.1 mAdc, I
C
= 0)
V
(BR)EBO
–5.0 —
Vdc
Base Cutoff Current
(V
CE
= –35 Vdc, V
EB
= –0.4 Vdc)
I
BEV
— –0.1
µAdc
Collector Cutoff Current
(V
CE
= –35 Vdc, V
EB
= –0.4 Vdc)
I
CEX
— –0.1
µAdc
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
