MMBT3904LT1G

Cross Number:

Item Description: SS SOT23 GP XSTR NPN PB F
Additional Information:

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Semiconductor Components Industries, LLC, 2004
February, 2004 − Rev. 5
1 Publication Order Number:
MMBT3904LT1/D
MMBT3904LT1
Preferred Device
General Purpose Transistor
NPN Silicon
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage V
CEO
40 Vdc
CollectorBase Voltage V
CBO
60 Vdc
EmitterBase Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance Junction to Ambient R
JA
556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance Junction−to−Ambient R
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
55 to
+150
°C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
MMBT3904LT1 SOT−23 3000 / Tape & Reel
MMBT3904LT1G SOT−23
3000 / Tape & Reel
MMBT3904LT3 SOT−23 10000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT−23 (TO−236)
CASE 318
Style 6
MARKING
DIAGRAM
3
2
1
1AM
1AM = Specific Device Code
MMBT3904LT3G SOT−23 10000 / Tape & Reel
MMBT3904LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (I
C
= 1.0 mAdc, I
B
= 0) V
(BR)CEO
40 Vdc
CollectorBase Breakdown Voltage (I
C
= 10 Adc, I
E
= 0) V
(BR)CBO
60 Vdc
EmitterBase Breakdown Voltage (I
E
= 10 Adc, I
C
= 0) V
(BR)EBO
6.0 Vdc
Base Cutoff Current (V
CE
= 30 Vdc, V
EB
= 3.0 Vdc) I
BL
50 nAdc
Collector Cutoff Current (V
CE
= 30 Vdc, V
EB
= 3.0 Vdc) I
CEX
50 nAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
H
FE
40
70
100
60
30
300
CollectorEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
0.2
0.3
Vdc
BaseEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
BE(sat)
0.65
0.85
0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product (I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz) f
T
300 MHz
Output Capacitance (V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz) C
obo
4.0 pF
Input Capacitance (V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz) C
ibo
8.0 pF
Input Impedance (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz) h
ie
1.0 10 k ohms
Voltage Feedback Ratio (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz) h
re
0.5 8.0 X 10
−4
SmallSignal Current Gain (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz) h
fe
100 400
Output Admittance (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz) h
oe
1.0 40 mhos
Noise Figure (V
CE
= 5.0 Vdc, I
C
= 100 Adc, R
S
= 1.0 k ohms, f = 1.0 kHz) NF 5.0 dB
SWITCHING CHARACTERISTICS
Delay Time
(
V
CC
= 3.0 Vdc, V
BE
= −0.5 Vdc,
t
d
35
ns
Rise Time
(V
CC
=
3
.
0
Vdc
,
V
BE
=
−0
.
5
Vdc
,
I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
t
r
35
ns
Storage Time
(
V
CC
= 3.0 Vdc,
t
s
200
ns
Fall Time
(V
CC
=
3
.
0
Vdc
,
I
C
= 10 mAdc, I
B1
= I
B2
= 1.0 mAdc)
t
f
50
ns
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
+3 V
275
10 k
1N916
C
S
< 4 pF*
+3 V
275
10 k
C
S
< 4 pF*
< 1 ns
−0.5 V
+10.9 V
300 ns
DUTY CYCLE = 2%
< 1 ns
−9.1 V
+10.9 V
DUTY CYCLE = 2%
t
1
0
10 < t
1
< 500 s
* Total shunt capacitance of test jig and connectors
MMBT3904LT1
http://onsemi.com
3
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 4. Charge Data
I
C
, COLLECTOR CURRENT (mA)
5000
1.0
V
CC
= 40 V
I
C
/I
B
= 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20
30 40
0.2 0.3 0.5 0.7
Q
T
Q
A
C
ibo
C
obo
T
J
= 25°C
T
J
= 125°C
Figure 5. TurnOn Time
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
Figure 6. Rise Time
I
C
, COLLECTOR CURRENT (mA)
TIME (ns)
1.0 2.0 3.0 10 20
70
5
100
t , RISE TIME (ns)
Figure 7. Storage Time
I
C
, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 30 50
200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0 30 50
200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0
30 50
200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0 30 50
200
10
30
7
20
r
t , FALL TIME (ns)
f
t , STORAGE TIME (ns)
s
V
CC
= 40 V
I
C
/I
B
= 10
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 10
t
r
@ V
CC
= 3.0 V
t
d
@ V
OB
= 0 V
40 V
15 V
2.0 V
I
C
/I
B
= 10
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 20
t
s
= t
s
1
/
8
t
f
I
B1
= I
B2
12NEXT

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