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MMBF2201NT1

Part # MMBF2201NT1
Description MOSFET N-CH 20V 300MA SOT-323
Category IC
Availability In Stock
Qty 1821
Qty Price
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383 - 764 $0.06392
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Manufacturer Available Qty
ON Semiconductor
Date Code: 0549
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Part of the GreenLine Portfolio of devices with energy–con-
serving traits.
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Low r
DS(on)
assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
Low r
DS(on)
Provides Higher Efficiency and Extends Battery Life
Miniature SC–70/SOT–323 Surface Mount Package Saves
Board Space
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage V
DSS
20 Vdc
Gate–to–Source Voltage — Continuous V
GS
± 20 Vdc
Drain Current — Continuous @ T
A
= 25°C
Drain Current — Continuous @ T
A
= 70°C
Drain Current — Pulsed Drain Current (t
p
10 µs)
I
D
I
D
I
DM
300
240
750
mAdc
Total Power Dissipation @ T
A
= 25°C
(1)
Derate above 25°C
P
D
150
1.2
mW
mW/°C
Operating and Storage Temperature Range T
J
, T
stg
– 55 to 150 °C
Thermal Resistance — Junction–to–Ambient R
θJA
833 °C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds T
L
260 °C
DEVICE MARKING
N1
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMBF2201NT1 7 8 mm embossed tape 3000
MMBF2201NT3 13 8 mm embossed tape 10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBF2201NT1/D
SEMICONDUCTOR TECHNICAL DATA
CASE 419–02, Style 7
SC–70/SOT–323
NCHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
r
DS(on)
= 1.0 OHM
Motorola Preferred Device
3 DRAIN
1
GATE
2 SOURCE
Motorola, Inc. 1995
REV 1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10 µA)
V
(BR)DSS
20 Vdc
Zero Gate Voltage Drain Current
(V
DS
= 16 Vdc, V
GS
= 0 Vdc)
(V
DS
= 16 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
I
DSS
1.0
10
µAdc
Gate–Body Leakage Current (V
GS
= ± 20 Vdc, V
DS
= 0) I
GSS
±100 nAdc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 µAdc)
V
GS(th)
1.0 1.7 2.4 Vdc
Static Drain–to–Source On–Resistance
(V
GS
= 10 Vdc, I
D
= 300 mAdc)
(V
GS
= 4.5 Vdc, I
D
= 100 mAdc)
r
DS(on)
0.75
1.0
1.0
1.4
Ohms
Forward Transconductance (V
DS
= 10 Vdc, I
D
= 200 mAdc) g
FS
450 mMhos
DYNAMIC CHARACTERISTICS
Input Capacitance (V
DS
= 5.0 V) C
iss
45 pF
Output Capacitance (V
DS
= 5.0 V) C
oss
25
Transfer Capacitance (V
DG
= 5.0 V) C
rss
5.0
SWITCHING CHARACTERISTICS
(2)
Turn–On Delay Time
(V
DD
= 15 Vdc, I
D
= 300 mAdc,
R
L
= 50 )
t
d(on)
2.5
ns
Rise Time
(V
DD
= 15 Vdc, I
D
= 300 mAdc,
R
L
= 50 )
t
r
2.5
Turn–Off Delay Time
(V
DD
= 15 Vdc, I
D
= 300 mAdc,
R
L
= 50 )
t
d(off)
15
Fall Time t
f
0.8
Gate Charge (See Figure 5) Q
T
1400 pC
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current I
S
0.3 A
Pulsed Current I
SM
0.75
Forward Voltage
(2)
V
SD
0.85 V
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
TYPICAL CHARACTERISTICS
Figure 1. Typical Drain Characteristics
V
DS
, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 2. On Resistance versus Temperature
TEMPERATURE (
°
C)
I
D
, DRAIN CURRENT (AMPS)
R
DS
, ON RESISTANCE (OHMS)
0.5
0.6
0.7
0.8
0.9
1.0
0
40 87 9 10
0.6
0.8
1.0
1.2
1.4
1.6
0
60
1 2 3 5
6
0.1
0.2
0.3
0.4
0.4
0.2
40 20 0 20 40 60 80 100 120 140 160
V
GS
= 4 V
V
GS
= 3.5 V
V
GS
= 2.5 V
V
GS
= 3 V
V
GS
= 4.5 V
V
GS
= 10 V
I
D
= 100 mA
I
D
= 300 mA
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
Figure 3. On Resistance versus GateSource
Voltage
GATESOURCE VOLTAGE (VOLTS)
Figure 4. On Resistance versus Drain Current
I
D
, DRAIN CURRENT (AMPS)
R
DS
, ON RESISTANCE (OHMS)
Figure 5. SourceDrain Forward Voltage
V
SD
, SOURCE DRAIN FORWARD VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
V
DS
, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 7. Transfer Characteristics
V
GS
, GATESOURCE VOLTAGE (VOLTS)
2
4
6
8
10
0
70 96 8 10
0.2
0.4
0.6
0.8
1.0
1.2
0
0.10 0.5
0.01
0.1
1.0
0.001
0.10
20
25
30
35
40
45
0
40 8 12 16 20
2 41 3 5 0.2 0.3 0.4 0.80.6 0.7
R
DS
, ON RESISTANCE (OHMS)
I
S
, SOURCE CURRENT (AMPS)
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 2 6 10 14 18
5
10
15
0.2
0.4
0.6
0.8
0.9
1.0
0
0.50 2.51.0 1.5 2.0 4.03.0 3.5
I
D
, DRAIN CURRENT (AMPS)
4.5
0.3
0.5
0.7
0.1
I
D
= 300 mA
V
GS
= 4.5 V
V
GS
= 10 V
V
GS
= 0 V
F = 1 mHz
C
iss
C
oss
C
rss
55
150
25
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