April 1995
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
_______________________________________________________________________________
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol Parameter BS170 MMBF170 Units
V
DSS
Drain-Source Voltage 60 V
V
DGR
Drain-Gate Voltage (R
GS
< 1MΩ)
60 V
V
GSS
Gate-Source Voltage ± 20 V
I
D
Drain Current - Continuous 500 500 mA
- Pulsed 1200 800
P
D
Maximum Power Dissipation 830 300 mW
Derate Above 25°C 6.6 2.4 mW/°C
T
J
,T
STG
Operating and Storage Temperature Range -55 to 150 °C
T
L
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300 °C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistacne, Junction-to-Ambient 150 417 °C/W
BS170 Rev. C / MMBF170 Rev. D
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
D
G
© 1997 Fairchild Semiconductor Corporation
