2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25 C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(1)
MJ2500, MJ3000
(I
C
= 100 mAdc, I
B
= 0) MJ2501, MJ3001
V
(BR)CEO
60
80
—
—
Vdc
Collector–Emitter Leakage Current
(V
EB
= 60 Vdc, R
BE
= 1.0 k ohm) MJ2500, MJ3000
(V
EB
= 80 Vdc, R
BE
= 1.0 k ohm) MJ2501, MJ3001
(V
EB
= 60 Vdc, R
BE
= 1.0 k ohm, T
C
= 150 C) MJ2500, MJ3000
(V
EB
= 80 Vdc, R
BE
= 1.0 k ohm, T
C
= 150 C) MJ2501, MJ3001
I
CER
—
—
—
—
1.0
1.0
5.0
5.0
mAdc
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0) I
EBO
— 2.0 mAdc
Collector Emitter Leakage Current (V
CE
= 30 Vdc, I
B
= 0) MJ2500, MJ3000
(V
CE
= 40 Vdc, I
B
= 0) MJ2501, MJ3001
I
CEO
—
—
1.0
1.0
mAdc
ON CHARACTERISTICS
(1)
DC Current Gain (I
C
= 5.0 Adc, V
CE
= 3.0 Vdc) h
FE
1000 — —
Collector–Emitter Saturation Voltage (I
C
= 5.0 Adc, I
B
= 20 mAdc)
(I
C
= 10 Adc, I
B
= 50 mAdc)
V
CE(sat)
—
—
2.0
4.0
Vdc
Base Emitter Voltage (I
C
= 5.0 Adc, V
CE
= 3.0 Vdc) V
BE(on)
— 3.0 Vdc
(1)
Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
Figure 2. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 10
h
FE
, DC CURRENT GAIN
T
J
= 150
°
C
25
°
C
–55
°
C
V
CE
= 3.0 Vdc
500
200
100
50,000
5000
20,000
2000
1000
10,000
5.0
Figure 3. Small–Signal Current Gain
f, FREQUENCY (Hz)
500
300
100
3000
h
FE
, SMALL–SIGNAL CURRENT GAIN
200
2000
1000
30
50
T
C
= 25
°
C
V
CE
= 3.0 Vdc
I
C
= 5.0 Adc
10
4
10
3
10
5
10
6
50
I
C
, COLLECTOR CURRENT (AMP)
V
BE(sat)
@ I
C
/I
B
= 250
V, VOLTAGE (VOLTS)
Figure 4. “On” Voltages
V
CE(sat)
@ I
C
/I
B
= 250
T
J
= 25
°
C
V
BE
@ V
CE
= 3.0 V
0.01 0.2 0.50.05 1.0 2.0 105.0
3.5
2.5
2.0
1.5
1.0
0
SECONDARY BREAKDOWN LIMITED
THERMALLY LIMITED @ T
C
= 25
°
C
BONDING WIRE LIMITED
10
1.0
Figure 5. DC Safe Operating Area
7.0
2.0
10 20 100
T
J
= 200
°
C
0.2
3.0
0.5
I
C
, COLLECTOR CURRENT (AMP)
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
30 70
1.0
0.1
2.0 503.0 5.0 7.0
MJ2500, MJ3000
MJ2501, MJ3001
0.5
3.0
0.10.02
0.7
0.3
There are two limitations on the power handling ability of a
transistor: junction temperature and secondary breakdown.
Safe operating area curves indicate I
C
– V
CE
limits of the
transistor that must be observed for reliable operation; e.g.,
the transistor must not be subjected to greater dissipation
than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.
