MC74HC14A
http://onsemi.com
2
MAXIMUM RATINGS*
Symbol Parameter Value Unit
V
CC
DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V
V
in
DC Input Voltage (Referenced to GND) – 0.5 to V
CC
+ 0.5 V
V
out
DC Output Voltage (Referenced to GND) – 0.5 to V
CC
+ 0.5 V
I
in
DC Input Current, per Pin ± 20 mA
I
out
DC Output Current, per Pin ± 25 mA
I
CC
DC Supply Current, V
CC
and GND Pins ± 50 mA
P
D
Power Dissipation in Still Air, Plastic DIP†
SOIC Package†
TSSOP Package†
750
500
450
mW
T
stg
Storage Temperature Range – 65 to + 150
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP, SOIC or TSSOP Package
260
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/ C from 65 to 125 C
SOIC Package: – 7 mW/ C from 65 to 125 C
TSSOP Package: – 6.1 mW/ C from 65 to 125 C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage (Referenced to GND) 2.0 6.0 V
V
in
, V
out
DC Input Voltage, Output Voltage (Referenced to
GND)
0 V
CC
V
T
A
Operating Temperature Range, All Package Types – 55 + 125
C
t
r
, t
f
Input Rise/Fall Time V
CC
= 2.0 V
(Figure 1) V
CC
= 4.5 V
V
CC
= 6.0 V
0
0
0
No Limit*
No Limit*
No Limit*
ns
*When V
in
= 50% V
CC
, I
CC
> 1mA
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
cuit. For proper operation, V
in
and
V
out
should be constrained to the
range GND (V
in
or V
out
) V
CC
.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
).
Unused outputs must be left open.
