MC74HC139A
http://onsemi.com
2
MAXIMUM RATINGS*
Symbol Parameter Value Unit
V
CC
DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V
V
in
DC Input Voltage (Referenced to GND) – 1.5 to V
CC
+ 1.5 V
V
out
DC Output Voltage (Referenced to GND) – 0.5 to V
CC
+ 0.5 V
I
in
DC Input Current, per Pin ± 20 mA
I
out
DC Output Current, per Pin ± 25 mA
I
CC
DC Supply Current, V
CC
and GND Pins ± 50 mA
P
D
Power Dissipation in Still Air, Plastic DIP†
SOIC Package†
750
500
mW
T
stg
Storage Temperature – 65 to + 150
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/ C from 65 to 125 C
SOIC Package: – 7 mW/ C from 65 to 125 C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage (Referenced to GND) 2.0 6.0 V
V
in
, V
out
DC Input Voltage, Output Voltage (Referenced to GND) 0 V
CC
V
T
A
Operating Temperature, All Package Types – 55 + 125
C
t
r
, t
f
Input Rise and Fall Time V
CC
= 2.0 V
(Figure 1) V
CC
= 4.5 V
V
CC
= 6.0 V
0
0
0
1000
500
400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol Parameter Test Conditions
V
CC
V
– 55 to
25 C
85 C 125 C
Unit
V
IH
Minimum High–Level Input
Voltage
V
out
= 0.1 V or V
CC
– 0.1 V
|I
out
| 20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
IL
Maximum Low–Level Input
Voltage
V
out
= 0.1 V or V
CC
– 0.1 V
|I
out
| 20 µA
2.0
4.5
6.0
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
V
V
OH
Minimum High–Level Output
Voltage
V
in
= V
IH
or V
IL
|I
out
| 20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
V
in
= V
IH
or V
IL
|I
out
| 4.0 mA
|I
out
| 5.2 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
V
OL
Maximum Low–Level Output
Voltage
V
in
= V
IH
or V
IL
|I
out
| 20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
in
= V
IH
or V
IL
|I
out
| 4.0 mA
|I
out
| 5.2 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
I
in
Maximum Input Leakage
Current
V
in
= V
CC
or GND 6.0 ± 0.1 ± 1.0 ± 1.0 µA
I
CC
Maximum Quiescent Supply
Current (per Package)
V
in
= V
CC
or GND
I
out
= 0 µA
6.0 4 40 160 µA
NOTE:Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book
(DL129/D).
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
cuit. For proper operation, V
in
and
V
out
should be constrained to the
range GND (V
in
or V
out
) V
CC
.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
).
Unused outputs must be left open.
