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MC14093BDG

Part # MC14093BDG
Description LOG CMOS SCHMITT TRG QUAD - Rail/Tube
Category IC
Availability Out of Stock
Qty 0
Qty Price
1 + $0.07954



Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

© Semiconductor Components Industries, LLC, 2006
October, 2006 Rev. 7
1 Publication Order Number:
MC14093B/D
MC14093B
Quad 2−Input NAND"
Schmitt Trigger
The MC14093B Schmitt trigger is constructed with MOS
Pchannel and Nchannel enhancement mode devices in a single
monolithic structure. These devices find primary use where low power
dissipation and/or high noise immunity is desired. The MC14093B
may be used in place of the MC14011B quad 2input NAND gate for
enhanced noise immunity or to “square up” slowly changing
waveforms.
Features
Supply Voltage Range = 3.0 Vdc to 18 Vdc
Capable of Driving Two LowPower TTL Loads or One LowPower
Schottky TTL Load Over the Rated Temperature Range
Triple Diode Protection on All Inputs
PinforPin Compatible with CD4093
Can be Used to Replace MC14011B
Independent SchmittTrigger at each Input
PbFree Packages are Available
MAXIMUM RATINGS (Voltages Referenced to V
SS
)
Symbol Parameter Value Unit
V
DD
DC Supply Voltage Range 0.5 to +18.0 V
V
in
, V
out
Input or Output Voltage Range
(DC or Transient)
0.5 to V
DD
+ 0.5 V
I
in
, I
out
Input or Output Current
(DC or Transient) per Pin
± 10 mA
P
D
Power Dissipation,
per Package (Note 1)
500 mW
T
A
Ambient Temperature Range 55 to +125 °C
T
stg
Storage Temperature Range 65 to +150 °C
T
L
Lead Temperature
(8Second Soldering)
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
highimpedance circuit. For proper operation, V
in
and V
out
should be constrained
to the range V
SS
v (V
in
or V
out
) v V
DD
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g.,
either V
SS
or V
DD
). Unused outputs must be left open.
http://onsemi.com
MARKING
DIAGRAMS
1
14
PDIP14
P SUFFIX
CASE 646
MC14093BCP
AWLYYWWG
SOIC14
D SUFFIX
CASE 751A
TSSOP14
DT SUFFIX
CASE 948G
1
14
14093BG
AWLYWW
14
093B
ALYW G
G
1
14
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G or G = PbFree Package
SOEIAJ14
F SUFFIX
CASE 965
1
14
MC14093B
ALYWG
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
MC14093B
http://onsemi.com
2
PIN ASSIGNMENT
11
12
13
14
8
9
105
4
3
2
1
7
6
OUT
C
OUT
D
IN 1
D
IN 2
D
V
DD
IN 1C
IN 2
C
OUT
B
OUT
A
IN 2
A
IN 1
A
V
SS
IN 2
B
IN 1
B
LOGIC DIAGRAM
13
11
V
DD
= PIN 14
V
SS
= PIN 7
10
4
3
12
9
8
6
5
2
1
EQUIVALENT CIRCUIT SCHEMATIC
(1/4 OF CIRCUIT SHOWN)
ORDERING INFORMATION
Device Package Shipping
MC14093BCP PDIP14
25 Units / Rail
MC14093BCPG PDIP14
(PbFree)
MC14093BD SOIC14
55 Units / Rail
MC14093BDG SOIC14
(PbFree)
MC14093BDR2 SOIC14
2500 Units / Tape & Reel
MC14093BDR2G SOIC14
(PbFree)
MC14093BDTR2 TSSOP14*
MC14093BDTR2G TSSOP14*
MC14093BFEL SOEIAJ14
2000 Units / Tape & Reel
MC14093BFELG
SOEIAJ14
(PbFree)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently PbFree.
MC14093B
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (Voltages Referenced to V
SS
)
Characteristic Symbol
V
DD
Vdc
55_C 25_C 125_C
Unit
Min Max Min Typ
(2)
Max Min Max
Output Voltage “0” Level
V
in
= V
DD
or 0
“1” Level
V
in
= 0 or V
DD
V
OL
5.0
10
15
0.05
0.05
0.05
0
0
0
0.05
0.05
0.05
0.05
0.05
0.05
Vdc
V
OH
5.0
10
15
4.95
9.95
14.95
4.95
9.95
14.95
5.0
10
15
4.95
9.95
14.95
Vdc
Output Drive Current
(V
OH
= 2.5 Vdc) Source
(V
OH
= 4.6 Vdc)
(V
OH
= 9.5 Vdc)
(V
OH
= 13.5 Vdc)
(V
OL
= 0.4 Vdc) Sink
(V
OL
= 0.5 Vdc)
(V
OL
= 1.5 Vdc)
I
OH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
– 1.7
– 0.36
– 0.9
– 2.4
mAdc
I
OL
5.0
10
15
0.64
1.6
4.2
0.51
1.3
3.4
0.88
2.25
8.8
0.36
0.9
2.4
mAdc
Input Current I
in
15 ± 0.1 ± 0.00001 ± 0.1 ± 1.0
mAdc
Input Capacitance
(V
in
= 0)
C
in
5.0 7.5 pF
Quiescent Current
(Per Package)
I
DD
5.0
10
15
0.25
0.5
1.0
0.0005
0.0010
0.0015
0.25
0.5
1.0
7.5
15
30
mAdc
Total Supply Current
(3)
(4)
(Dynamic plus Quiescent,
Per Package)
(C
L
= 50 pF on all outputs, all
buffers switching)
I
T
5.0
10
15
I
T
= (1.2 mA/kHz) f + I
DD
I
T
= (2.4 mA/kHz) f + I
DD
I
T
= (3.6 mA/kHz) f + I
DD
mAdc
Hysteresis Voltage V
H
5.0
10
15
0.3
1.2
1.6
2.0
3.4
5.0
0.3
1.2
1.6
1.1
1.7
2.1
2.0
3.4
5.0
0.3
1.2
1.6
2.0
3.4
5.0
Vdc
Threshold Voltage
PositiveGoing
NegativeGoing
V
T+
5.0
10
15
2.2
4.6
6.8
3.6
7.1
10.8
2.2
4.6
6.8
2.9
5.9
8.8
3.6
7.1
10.8
2.2
4.6
6.8
3.6
7.1
10.8
Vdc
V
T–
5.0
10
15
0.9
2.5
4.0
2.8
5.2
7.4
0.9
2.5
4.0
1.9
3.9
5.8
2.8
5.2
7.4
0.9
2.5
4.0
2.8
5.2
7.4
Vdc
2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
3. The formulas given are for the typical characteristics only at 25_C.
4. To calculate total supply current at loads other than 50 pF:
I
T
(C
L
) = I
T
(50 pF) + (C
L
– 50) Vfk
where: I
T
is in mA (per package), C
L
in pF, V = (V
DD
– V
SS
) in volts, f in kHz is input frequency, and k = 0.004.
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