LTC4352
3
4352f
ELECTRICAL CHARACTERISTICS
The l denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T
A
= 25°C. V
IN
= 12V, V
SOURCE
= V
IN
, V
OUT
= V
IN
, V
CC
Open, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Supplies
V
IN
Input Operating Range
With External 2.9V to 4.7V V
CC
Supply
With External 4.7V to 6V V
CC
Supply
l
l
l
2.9
0
0
18
V
CC
18
V
V
V
V
CC(EXT)
V
CC
External Supply Range
l
2.9 6 V
V
CC(INT)
V
CC
Internal Regulator Voltage
l
3.5 4.1 4.7 V
I
IN
V
IN
Supply Current
V
IN
= 0V, V
CC
= 5V, V
OUT
= 18V
l
l
1.4
–10
3
–13
mA
µA
I
CC
External V
CC
Supply Current V
CC
= 5V, V
IN
= 0V
l
1.25 2.5 mA
V
CC(UVLO)
V
CC
Undervoltage Lockout Threshold V
CC
Rising
l
2.45 2.57 2.7 V
∆V
CC(HYST)
V
CC
Undervoltage Lockout Hysteresis
l
50 70 90 mV
Ideal Diode Control
V
FWD(REG)
Forward Regulation Voltage (V
IN
− V
OUT
)
l
10 25 40 mV
∆V
GATE
MOSFET Gate Drive (V
GATE
– V
SOURCE
)V
FWD
= 0.1V, I = 0 and –1A
l
56.17.5 V
t
ON(GATE)
GATE Turn-On Delay C
GATE
= 10nF, V
FWD
= 0.2V
l
0.25 0.5 µs
t
OFF(GATE)
GATE Turn-Off Delay C
GATE
= 10nF, V
FWD
= −0.2V
l
0.2 0.5 µs
Input/Output Pins
V
UV,OV(TH)
UV, OV Threshold Voltage V
UV
Falling, V
OV
Rising
l
490 500 510 mV
∆V
UV,OV(HYST)
UV, OV Threshold Hysteresis
l
2.5 5 8.5 mV
V
REV(TH)
REV Threshold Voltage
l
0.8 1.0 1.2 V
I
UV,OV
UV, OV Current V = 0.5V
l
0±1 µA
I
REV
REV Current V
REV
= 1V
l
71013 µA
I
OUT
OUT Current V
OUT
= 0V, 12V
l
–13 200 µA
I
SOURCE
SOURCE Current V
SOURCE
= 0V
l
–85 –130 µA
I
CPO(UP)
CPO Pull-Up Current V
CPO
= V
IN
= 2.9V
V
CPO
= V
IN
= 18V
l
l
–60
–50
–90
–75
–115
–100
µA
µA
I
GATE
GATE Fast Pull-Up Current
GATE Fast Pull-Down Current
GATE Off Pull-Down Current
V
FWD
= 0.2V, ∆V
GATE
= 0V, V
CPO
= 17V
V
FWD
= –0.2V, ∆V
GATE
= 5V
V
UV
= 0V, ∆V
GATE
= 2.5V
l
60
–1.5
1.5
100 145
A
A
µA
I
FLT,STAT(IN)
STA TUS, FAUL T Leakage Current V = 18V
l
0±1 µA
I
FLT,STAT(UP)
STA TUS, FAUL T Pull-Up Current V = 0V
l
–8 –10 –12 µA
V
OL
STA TUS, FAUL T Output Low Voltage I = 1.25mA
l
0.2 0.4 V
V
OH
STA TUS, FAUL T Output High Voltage I = –1A
l
V
CC
– 1 V
CC
– 0.5 V
∆V
GATE(ST)
MOSFET On Detect Threshold STA TUS Pulls Low, V
FWD
= 50mV
l
0.3 0.7 1.1 V
V
FWD(FLT)
Open MOSFET Threshold (V
IN
– V
OUT
) FAULT Pulls Low
l
200 250 300 mV
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating for extended periods may affect device reliability and
lifetime.
Note 2: All currents into device pins are positive; all currents out of device
pins are negative. All voltages are referenced to GND unless otherwise
specifi ed.
Note 3: Internal clamps limit the GATE and CPO pins to a minimum of 5V
above, and a diode below SOURCE. Driving these pins to voltages beyond
the clamp may damage the device.
