Freelance Electronics Components Distributor
Closed Dec 25th-26th
800-300-1968
We Stock Hard to Find Parts

LT1122DS8

Part # LT1122DS8
Description IC OPAMP JFET 13MHZ 8SO
Category IC
Availability In Stock
Qty 34
Qty Price
1 - 7 $9.69841
8 - 14 $7.71464
15 - 21 $7.27381
22 - 28 $6.75950
29 + $6.02477
Manufacturer Available Qty
Date Code: 9850
  • Shipping Freelance Stock: 34
    Ships Immediately



Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

1
LT1122
Fast Settling, JFET Input
Operational Amplifier
100% Tested Settling Time 340ns Typ
to 1mV at Sum Node, 10V Step 540ns Max
Tested with Fixed Feedback Capacitor
Slew Rate 60V/µs Min
Gain Bandwidth Product 14MHz
Power Bandwidth (20Vp-p) 1.2 MHz
Unity Gain Stable; Phase Margin 60°
Input Offset Voltage 600µV Max
Input Bias Current 25°C 75pA Max
70°C 600pA Max
Input Offset Current 25°C 40pA Max
70°C 150pA Max
Low Distortion
D
U
ESCRIPTIO
S
F
EA
T
U
RE
The LT1122 JFET input operational amplifier combines
high speed and precision performance.
A unique poly-gate JFET process minimizes gate series
resistance and gate-to-drain capacitance, facilitating wide
bandwidth performance, without degrading JFET transis-
tor matching.
It slews at 80V/µs and settles in 340ns. The LT1122 is
internally compensated to be unity gain stable, yet it has a
bandwidth of 14MHz at a supply current of only 7mA. Its
speed makes the LT1122 an ideal choice for fast settling
12-bit data conversion and acquisition systems.
The LT1122 offset voltage of 120µV, and voltage gain of
500,000 also support the 12-bit accurate applications.
The input bias current of 10pA and offset current of 4pA
combined with its speed allow the LT1122 to be used in
such applications as high speed sample and hold amplifi-
ers, peak detectors, and integrators.
Fast 12-Bit D/A Output Amplifiers
High Speed Buffers
Fast Sample and Hold Amplifiers
High Speed Integrators
Voltage to Frequency Converters
Active Filters
Log Amplifiers
Peak Detectors
12-Bit Voltage Output D/A Converter
Large-Signal Response
5V/DIV
200ns/DIV
AV = –1
1122 TA07
U
S
A
O
PP
L
IC
AT
I
U
A
O
PP
L
IC
AT
ITY
P
I
CA
L
0mA TO 2mA
OR 4mA
+
2
3
6
C
f
V
0V TO 10V
OUT
12-BIT CURRENT OUTPUT D/A CONVERTER
C = 5pF TO 17pF
(DEPENDING ON D/A CONVERTER USED)
+
f
LT1122
LT1122•TA01
2
LT1122
Supply Voltage .................................................... ± 20V
Differential Input Voltage ...................................... ± 40V
Input Voltage ........................................................ ± 20V
Output Short Circuit Duration .......................... Indefinite
Lead Temperature (Soldering, 10 sec.).................300°C
Operating Temperature Range
LT1122AM/BM/CM/DM .................... – 55°C to 125°C
LT1122AC/BC/CC/DC/CS/DS .............. – 40°C to 85°C
Storage Temperature Range
All Devices....................................... – 65°C to 150°C
WU
U
PACKAGE
/
O
RDER I FOR ATIO
LT1122AMJ8 LT1122CCJ8
LT1122BMJ8 LT1122DCJ8
LT1122CMJ8 LT1122ACN8
LT1122DMJ8 LT1122BCN8
LT1122ACJ8 LT1122CCN8
LT1122BCJ8 LT1122DCN8
ORDER PART
NUMBER
ORDER PART
NUMBER
LT1122CS8
LT1122DS8
PART MARKING
1122C
1122D
A
U
G
W
A
W
U
W
ARB
S
O
LU
T
EXI T
I
S
8
7
6
54
3
2
1
V
TRIM
–IN
+IN
V
V TRIM
OUT
+
V
SPEED BOOST/
OVERCOMP
TOP VIEW
N8 PACKAGE
8-LEAD PLASTIC DIP
OS
OS
LT1122
J8 PACKAGE
8-LEAD HERMETIC DIP
T
JMAX
= 150°C, θ
JA
= 130°C/W (N8)
T
JMAX
= 175°C, θ
JA
= 100°C/W (J8)
8
7
6
54
3
2
1
–IN
V
TRIM
+IN
V TRIM
OUT
OS
V
SPEED BOOST/
OVERCOMP
TOP VIEW
S8 PACKAGE
8-LEAD PLASTIC SOIC
+
OS
V
LT1122
T
JMAX
= 150°C, θ
JA
= 190°C/W
Consult factory for Industrial grade parts.
E
LECTR
IC
AL C CHARA TERIST
ICS
V
S
= ± 15V, T
A
= 25°C, V
CM
= 0V unless otherwise noted. (Note 1)
LT1122CM/DM
LT1122AM/BM LT1122CC/DC
LT1122AC/BC LT1122CS/DS
SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
V
OS
Input Offset Voltage 120 600 130 900 µV
I
OS
Input Offset Current 4 40 5 50 pA
I
B
Input Bias Current 10 75 12 100 pA
Input Resistance
Differential 10
12
10
12
Common Mode V
CM
= – 10V to + 8V 10
12
10
12
V
CM
= + 8V to + 11V 10
11
10
11
Input Capacitance 44pF
S
R
Slew Rate A
V
= – 1 60 80 50 75 V/µs
Settling Time (Note 2) + 10V to 0V, – 10V to 0V
100% Tested: A and C Grades
to 1mV at Sum Node 340 540 350 590 ns
B and D Grades to 1mV at Sum Node 350 360 ns
All Grades to 0.5mV at Sum Node 450 470 ns
GBW Gain Bandwidth Product 14 13 MHz
Power Bandwidth V
OUT
= 20Vp-p 1.2 1.1 MHz
A
VOL
Large Signal Voltage Gain V
OUT
= ± 10V, R
L
= 2k 180 500 150 450 V/mV
V
OUT
= ± 10V, R
L
= 600 130 250 110 220 V/mV
CMRR Common Mode Rejection Ratio V
CM
= ± 10V 83 99 80 98 dB
Input Voltage Range (Note 3) ± 10.5 ± 11 ± 10.5 ± 11 V
PSRR Power Supply Rejection Ratio V
S
= ± 10V to ± 18V 86 103 82 101 dB
Input Noise Voltage 0.1Hz to 10Hz 3.0 3.3 µV
P-P
Input Noise Voltage Density f
O
= 100Hz 25 27 nV/Hz
f
O
= 10kHz 14 15 nV/Hz
Input Noise Current Density f
O
= 100Hz, f
O
= 10kHz 2 2 fA/Hz
3
LT1122
E
LECTR
IC
AL C CHARA TERIST
ICS
LT1122CM/DM
LT1122AM/BM LT1122CC/DC
LT1122AC/BC LT1122CS/DS
SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
V
S
= ± 15V, T
A
= 25°C, V
CM
= 0V unless otherwise noted.
LT1122CC/DC
LT1122AC/BC LT1122CS/DS
SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
V
OS
Input Offset Voltage 350 1400 400 2000 µV
Average Temperature Coefficient 518 6 25 µV/°C
of Input Offset Voltage
I
OS
Input Offset Current 12 150 15 200 pA
I
B
Input Bias Current 80 600 90 800 pA
A
VOL
Large Signal Voltage Gain V
OUT
= ± 10V, R
L
2k 120 380 100 340 V/mV
CMRR Common Mode Rejection Ratio V
CM
= ± 10V 82 98 78 96 dB
PSRR Power Supply Rejection Ratio V
S
= ± 10V to ± 17V 84 101 80 99 dB
Input Voltage Range ± 10 ± 10.8 ± 10 ± 10.8 V
V
OUT
Output Voltage Swing R
L
= 2k ± 11.5 ± 12.4 ± 11.5 ± 12.4 V
S
R
Slew Rate A
V
= – 1 50 70 40 65 V/µs
V
S
= ± 15V, V
CM
= 0V, 0°C T
A
70°C, unless otherwise noted. (Note 1)
LT1122AM/BM LT1122CM/DM
SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
V
OS
Input Offset Voltage 650 2400 800 3400 µV
Average Temperature Coefficient 618 725 µV/°C
of Input Offset Voltage
I
OS
Input Offset Current 0.5 6 0.6 9 nA
I
B
Input Bias Current 625 735 nA
A
VOL
Large Signal Voltage Gain V
OUT
= ± 10V, R
L
2k 70 230 60 200 V/mV
CMRR Common Mode Rejection Ratio V
CM
= ± 10V 80 97 76 94 dB
PSRR Power Supply Rejection Ratio V
S
= ± 10V to ± 17V 83 100 78 98 dB
Input Voltage Range ± 10 ± 10.5 ± 10 ± 10.5 V
V
OUT
Output Voltage Swing R
L
= 2k ± 11.3 ± 12.1 ± 11.3 ± 12.1 V
S
R
Slew Rate A
V
= – 1 45 60 35 55 V/µs
V
S
= ± 15V, V
CM
= 0V, – 55°C T
A
125°C, unless otherwise noted. (Note 1)
The
denotes the specifications which apply over the full operating
temperature range.
Note 1: The LT1122 is measured in an automated tester in less than one
second after application of power. Depending on the package used, power
dissipation, heat sinking, and air flow conditions, the fully warmed up chip
temperature can be 10°C to 50°C higher than the ambient temperature.
Note 2: Settling time is 100% tested for A and C grades using the settling
time test circuit shown. This test is not included in quality assurance
sample testing.
Note 3: Input voltage range functionality is assured by testing offset
voltage at the input voltage range limits to a maximum of 4mV (A, B
grades), to 5.7mV (C, D grades).
Note 4: Minimum supply voltage is tested by measuring offset voltage to
7mV maximum at ± 5V supplies.
Note 5: The LT1122 is not tested and not quality-assurance-sampled at
–40°C and at 85°C. These specifications are guaranteed by design,
correlation and/or inference from – 55°C, 0°C, 25°C, 70°C and/or 125°C
tests.
V
OUT
Output Voltage Swing R
L
= 2kΩ±12 ± 12.5 ± 12 ± 12.5 V
R
L
= 600Ω±11.5 ± 12 ± 11.5 ± 12 V
I
S
Supply Current 7.5 10 7.8 11 mA
Minimum Supply voltage (Note 4) ± 5 ± 5V
Offset Adjustment Range R
POT
10k, Wiper to V
+
± 4 ± 10 ± 4 ± 10 mV
123NEXT