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LND150N8

Part # LND150N8
Description Trans MOSFET N-CH 500V 0.03A4-Pin(3+Tab) SOT-89
Category IC
Availability Out of Stock
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1 + $1.70876

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

1
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Absolute Maximum Ratings
Drain-to-Source Voltage BV
DSX
Drain-to-Gate Voltage BV
DGX
Gate-to-Source Voltage ±20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
LND150
Advanced DMOS Technology
The LND1 is a high voltage N-channel depletion mode (normally-
on) transistor utilizing Supertex’s lateral DMOS technology. The
gate is ESD protected.
The LND1 is ideal for high voltage applications in the areas of
normally-on switches, precision constant current sources, volt-
age ramp generation and amplification.
Ordering Information
BV
DSX
/R
DS(ON)
I
DSS
BV
DGX
(max) (min) TO-92 TO-243AA* Die
500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND
Order Number / Package
* Same as SOT-89. Product shipped on 2000 piece carrier tape reels.
Features
❏ ESD gate protection
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Excellent thermal stability
❏ Integral source-drain diode
❏ High input impedance and low C
ISS
Applications
❏ Solid state relays
❏ Normally-on switches
❏ Converters
❏ Power supply circuits
❏ Constant current sources
❏ Input protection circuits
N-Channel Depletion-Mode
MOSFET
Product marking for TO-243AA:
Where ❋ = 2-week alpha date code
LN1E❋
Package Options
TO-243AA
(SOT-89)
TO-92
G 
S 
D
S
S G D
Note: See Package Outline section for dimensions.
2
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Thermal Characteristics
Package I
D
(continuous)* I
D
(pulsed) Power Dissipation
θθ
θθ
θ
jc
θθ
θθ
θ
ja
I
DR
I
DRM
*
@T
A
= 25°C °C/W °C/W
TO-92 30mA 30mA 0.74W 125 170 30mA 30mA
TO-243AA 30mA 30mA 1.6W
†
31 105
†
30mA 30mA
* I
D
(continuous) is limited by max rated T
f
.
† Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
LND150
Symbol Parameter Min Typ Max Unit Conditions
BV
DSX
Drain-to-Source Breakdown Voltage 500 V V
GS
= -10V, I
D
= 1.0mA
V
GS(OFF)
Gate-to-Source OFF Voltage -1.0 -3.0 V V
DS
= 25V, I
D
= 100nA
∆V
GS(OFF)
Change in V
GS(OFF)
with Temperature 5.0 mV/°CV
DS
= 25V, I
D
= 100nA
I
GSS
Gate Body Leakage Current 100 nA V
GS
= ±20V, V
DS
= 0V
I
D(OFF)
Drain-to-Source Leakage Current 100 nA V
GS
= -10V, V
DS
= 450V
100 µAV
GS
= -10V, V
DS
= 0.8V max rating
T
A
=125°C
I
DSS
Saturated Drain-to-Source Current 1.0 3.0 mA V
GS
= 0V, V
DS
= 25V
R
DS(ON)
Static Drain-to-Source ON-State Resistance 850 1000 Ω V
GS
= 0V, I
D
= 0.5mA
∆R
DS(ON)
Change in RDS(ON) with Temperature 1.2 %/°CV
GS
= 0V, I
D
= 0.5mA
G
FS
Forward Transconductance 1.0 2.0 m V
GS
= 0V, I
D
= 1.0mA
C
ISS
Input Capacitance 7.5 10
C
OSS
Output Capacitance 2.0 3.5 pF
C
RSS
Reverse Transfer Capacitance 0.5 1.0
t
d(ON)
Turn-ON Delay Time 0.09
tr Rise Time 0.45
t
d(OFF)
Turn-OFF Delay Time 0.1
t
f
Fall Time 1.3
V
SD
Diode Forward Voltage Drop 0.9 V V
GS
= -10V, I
SD
= 1.0mA
t
rr
Reverse Recovery Time 200 ns V
GS
= -10V, I
SD
= 1.0mA
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics (@ 25°C unless otherwise specified)
µs
V
GS
= -10V, V
DS
= 25V
f = 1 MHz
V
DD
= 25V, I
D
= 1.0mA,
R
GEN
= 25Ω
Switching Waveforms and Test Circuit
Ω
3
Output Characteristics
6
5
4
3
2
1
0
0 250 500
I
D
(milliamps)
Saturation Characteristics
6
5
4
3
2
1
0
0123 54
Maximum Rated Safe Operating Area
1 100010010
1
10
100
0.1
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001 100.01 0.1 1.0
Transconductance vs. Drain Current
10
8
6
4
2
0
0
10
246
G
FS
(millisiemens)
Power Dissipation vs. Ambient Temperature
0 15010050
2
1
1257525
P
D
(watts)
V
DS
= 400V
V
GS
= 1.0V
0.5V
8
0V
-0.5V
-1.0V
V
GS
=1.0V
0.5V
0V
-0.5V
-1.0V
0
0
TO-243AA
V
DS
(volts) V
DS
(volts)
I
D
(milliamps)
T
A
= -55°C
T
A
= 25°C
T
A
= 125°C
I
D
(milliamps)
T
A
(°C)
I
D
(milliamps)
V
DS
(volts)
TO-243AA (DC)
T
A
= 25°C
TO-92 (pulsed)
TO-92 (DC)
t
P
(seconds)
TO-243AA
T
A
= 25°C
P
D
= 1.6W
TO-92
P
D
= 1W
T
C
= 25°C
TO-92
Typical Performance Curves
LND150
12NEXT
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