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LM13700N

Part # LM13700N
Description DUAL OPERATIONAL TRANSCONDUCTANCE AMPLIF - Rail/Tube
Category IC
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National Semiconductor Corp
Date Code: 8339
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National Semiconductor Corp
Date Code: 8232
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

LM13700
www.ti.com
SNOSBW2E NOVEMBER 1999REVISED MARCH 2013
LM13700 Dual Operational Transconductance Amplifiers with Linearizing Diodes and
Buffers
Check for Samples: LM13700
1
FEATURES
DESCRIPTION
The LM13700 series consists of two current
2
g
m
Adjustable over 6 Decades
controlled transconductance amplifiers, each with
Excellent g
m
Linearity
differential inputs and a push-pull output. The two
Excellent Matching between Amplifiers
amplifiers share common supplies but otherwise
operate independently. Linearizing diodes are
Linearizing Diodes
provided at the inputs to reduce distortion and allow
High Impedance Buffers
higher input levels. The result is a 10 dB signal-to-
High Output Signal-to-Noise Ratio
noise improvement referenced to 0.5 percent THD.
High impedance buffers are provided which are
APPLICATIONS
especially designed to complement the dynamic
range of the amplifiers. The output buffers of the
Current-Controlled Amplifiers
LM13700 differ from those of the LM13600 in that
Current-Controlled Impedances
their input bias currents (and hence their output DC
levels) are independent of I
ABC
. This may result in
Current-Controlled Filters
performance superior to that of the LM13600 in audio
Current-Controlled Oscillators
applications.
Multiplexers
Timers
Sample-and-Hold circuits
Connection Diagram
Figure 1. PDIP and SOIC Packages-Top View
See Package Number D0016A or NFG0016E
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 1999–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LM13700
SNOSBW2E NOVEMBER 1999REVISED MARCH 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)
Supply Voltage
LM13700 36 V
DC
or ±18V
Power Dissipation
(2)
T
A
= 25°C
LM13700N 570 mW
Differential Input Voltage ±5V
Diode Bias Current (I
D
) 2 mA
Amplifier Bias Current (I
ABC
) 2 mA
Output Short Circuit Duration Continuous
Buffer Output Current
(3)
20 mA
Operating Temperature Range
LM13700N 0°C to +70°C
DC Input Voltage +V
S
to V
S
Storage Temperature Range 65°C to +150°C
Soldering Information
PDIP Package
Soldering (10 sec.) 260°C
SOIC Package
Vapor Phase (60 sec.) 215°C
Infrared (15 sec.) 220°C
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits.
(2) For operation at ambient temperatures above 25°C, the device must be derated based on a 150°C maximum junction temperature and a
thermal resistance, junction to ambient, as follows: LM13700N, 90°C/W; LM13700M, 110°C/W.
(3) Buffer output current should be limited so as to not exceed package dissipation.
2 Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated
Product Folder Links: LM13700
LM13700
www.ti.com
SNOSBW2E NOVEMBER 1999REVISED MARCH 2013
Electrical Characteristics
(1)
LM13700
Parameter Test Conditions Units
Min Typ Max
Input Offset Voltage (V
OS
) Over Specified Temperature Range 0.4 4
mV
I
ABC
= 5 μA 0.3 4
V
OS
Including Diodes Diode Bias Current (I
D
) = 500 μA 0.5 5 mV
Input Offset Change 5 μA I
ABC
500 μA 0.1 3 mV
Input Offset Current 0.1 0.6 μA
Input Bias Current Over Specified Temperature Range 0.4 5 μA
1 8
Forward Transconductance (g
m
) 6700 9600 13000 μmho
Over Specified Temperature Range 5400
g
m
Tracking 0.3 dB
Peak Output Current R
L
= 0, I
ABC
= 5 μA 5 μA
R
L
= 0, I
ABC
= 500 μA 350 500 650
R
L
= 0, Over Specified Temp Range 300
Peak Output Voltage
Positive R
L
= , 5 μA I
ABC
500 μA +12 +14.2 V
Negative R
L
= , 5 μA I
ABC
500 μA 12 14.4 V
Supply Current I
ABC
= 500 μA, Both Channels 2.6 mA
V
OS
Sensitivity
Positive ΔV
OS
/ΔV
+
20 150 μV/V
Negative ΔV
OS
/ΔV
20 150 μV/V
CMRR 80 110 dB
Common Mode Range ±12 ±13.5 V
Crosstalk Referred to Input
(2)
100 dB
20 Hz < f < 20 kHz
Differential Input Current I
ABC
= 0, Input = ±4V 0.02 100 nA
Leakage Current I
ABC
= 0 (Refer to Test Circuit) 0.2 100 nA
Input Resistance 10 26 kΩ
Open Loop Bandwidth 2 MHz
Slew Rate Unity Gain Compensated 50 V/μs
Buffer Input Current
(2)
0.5 2 μA
Peak Buffer Output Voltage
(2)
10 V
(1) These specifications apply for V
S
= ±15V, T
A
= 25°C, amplifier bias current (I
ABC
) = 500 μA, pins 2 and 15 open unless otherwise
specified. The inputs to the buffers are grounded and outputs are open.
(2) These specifications apply for V
S
= ±15V, I
ABC
= 500 μA, R
OUT
= 5 kΩ connected from the buffer output to V
S
and the input of the
buffer is connected to the transconductance amplifier output.
Copyright © 1999–2013, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Links: LM13700
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