LF147, LF347-N
SNOSBH1D –MAY 1999–REVISED MARCH 2013
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
Absolute Maximum Ratings
(1)(2)
LF147 LF347B/LF347
Supply Voltage ±22V ±18V
Differential Input Voltage ±38V ±30V
Input Voltage Range
(3)
±19V ±15V
Output Short Circuit Duration
(4)
Continuous Continuous
Power Dissipation
(5) (6)
900 mW 1000 mW
T
j
max 150°C 150°C
θ
jA
CDIP (J) Package 70°C/W
PDIP (NFF) Package 75°C/W
SOIC Narrow (D) 100°C/W
SOIC Wide (D) 85°C/W
Operating Temperature Range See
(7)
See
(7)
Storage Temperature Range −65°C≤T
A
≤150°C
Lead Temperature (Soldering, 10 sec.) 260°C 260°C
Soldering Information PDIP / CDIP Soldering (10 seconds) 260°C
SOIC Package Vapor Phase (60 seconds) 215°C
Infrared (15 seconds) 220°C
ESD Tolerance
(8)
900V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
(3) Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
(4) Any of the amplifier outputs can be shorted to ground indefinitely, however, more than one should not be simultaneously shorted as the
maximum junction temperature will be exceeded.
(5) For operating at elevated temperature, these devices must be derated based on a thermal resistance of θ
jA
.
(6) Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the
part to operate outside ensured limits.
(7) The LF147 is available in the military temperature range −55°C≤T
A
≤125°C, while the LF347B and the LF347 are available in the
commercial temperature range 0°C≤T
A
≤70°C. Junction temperature can rise to T
j
max = 150°C.
(8) Human body model, 1.5 kΩ in series with 100 pF.
DC Electrical Characteristics
(1)(2)
Symbol Parameter Conditions LF147 LF347B LF347 Units
Min Typ Max Min Typ Max Min Typ Max
V
OS
Input Offset Voltage R
S
=10 kΩ, T
A
=25°C 1 5 3 5 5 10 mV
Over Temperature 8 7 13 mV
ΔV
OS
/Δ Average TC of Input R
S
=10 kΩ 10 10 10 μV/°C
T Offset Voltage
I
OS
Input Offset Current T
j
=25°C,
(2) (3)
25 100 25 100 25 100 pA
Over Temperature 25 4 4 nA
I
B
Input Bias Current T
j
=25°C,
(2) (3)
50 200 50 200 50 200 pA
Over Temperature 50 8 8 nA
R
IN
Input Resistance T
j
=25°C 10
12
10
12
10
12
Ω
(1) Refer to RETS147X for LF147D and LF147J military specifications.
(2) Unless otherwise specified the specifications apply over the full temperature range and for V
S
=±20V for the LF147 and for V
S
=±15V for
the LF347B/LF347. V
OS
, I
B
, and I
OS
are measured at V
CM
=0.
(3) The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature,
T
j
. Due to limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation the
junction temperature rises above the ambient temperature as a result of internal power dissipation, P
D
. T
j
=T
A
+θ
jA
P
D
where θ
jA
is the
thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum.
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