1011LD200
200 Watts, 32 Volts
Pulsed Avionics 1030 to 1090 MHz
LDMOS FET
GENERAL DESCRIPTION
The 1011LD200 is a COMMON SOURCE N-Channel enhancement mode
lateral MOSFET capable of providing 200 W
pk
of RF power from 1030 to 1090
MHz. The device is nitride passivated and utilizes gold metallization to ensure
highest MTTF. The transistor includes input prematch for broadband capability.
Low thermal resistance package reduces junction temperature, extends life.
CASE OUTLINE
55QX-1
(Common Source)
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25°C (P
d
) 700 W
Voltage and Current
Drain-Source (V
DSS
) 75V
Gate-Source (V
GS
) ± 20V
Temperatures
Storage Temperature -65 to +150°C
Operating Junction Temperature +200°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
BV
dss
Drain-Source Breakdown V
gs
= 0V, I
d
=20mA 75 V
I
dss
Drain-Source Leakage Current V
ds
= 38V, V
gs
= 0V
10 µA
I
gss
Gate-Source Leakage Current V
gs
= 10V, V
ds
= 0V 1 µA
V
gs(th)
Gate Threshold Voltage V
ds
= 10V, I
d
= 40 mA 3 6 V
V
ds(on)
Drain-Source On Voltage V
gs
= 10V, I
d
= 2A 0.3 V
g
FS
Forward Transconductance V
ds
= 10V, I
d
= 2A 2 S
θ
JC
1
Thermal Resistance 0.25 ºC/W
FUNCTIONAL CHARACTERISTICS @ 25°C, Vds = 32V, I
dq
= 500mA
G
PS
Common Source Power Gain
Pulse width = 32 µs, LTDC=2% 13 15 dB
Pd Pulse Droop F=1030/1090 MHz, P
out
= 200W 0.5 dB
η
d
Drain Efficiency F = 1030 MHz, P
out
=200W 43 %
ψ Load Mismatch F = 1090 MHz, P
out
= 200W 3:1
NOTES: 1. At rated output power and pulse conditions
Rev. B - Apr 2004
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.
