TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

NPN LOW POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/301

T4-LDS-0010 Rev. 3 (101342) Page 1 of 4

DEVICES LEVELS

2N918 2N918UB JAN

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS (T

C

= +25°C unless otherwise noted)

Parameters / Test Conditions Symbol Value Unit

Collector-Emitter Voltage V

CEO

15 Vdc

Collector-Base Voltage V

CBO

30 Vdc

Emitter-Base Voltage V

EBO

3.0 Vdc

Collector Current I

C

50 mAdc

Total Power Dissipation @ T

A

= +25°C

(1)

P

T

200 mW

Operating & Storage Junction Temperature Range T

op

& T

stg

-65 to +200 °C

Note: 1) Derate linearly 1.14mW/°C above T

A

> 25°C

ELECTRICAL CHARACTERISTICS (T

A

= +25°C, unless otherwise noted)

Parameters / Test Conditions Symbol Min. Max. Unit

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

I

C

= 3mAdc

V

(BR)CEO

15 Vdc

Collector-Base Cutoff Current

V

CB

= 30Vdc

V

CB

= 25Vdc

V

CB

= 25Vdc; T

A

= +150°C

I

CBO

1.0

10

1.0

µAdc

ηAdc

µAdc

Emitter-Base Cutoff Current

V

EB

= 3.0Vdc

V

EB

= 2.5Vdc

I

EBO

10

µAdc

ηAdc

Forward-Current Transfer Ratio

I

C

= 0.5mAdc, V

CE

= 10Vdc

I

C

= 3.0mAdc, V

CE

= 1.0Vdc

I

C

= 10mAdc, V

CE

= 10Vdc

I

C

= 3.0mAdc, V

CE

= 1.0Vdc; T

A

= -55°C

h

FE

10

20

10

200

Collector-Emitter Saturation Voltage

I

C

= 10mAdc, I

B

= 1.0mAdc

V

CE(sat)

0.4 Vdc

Base-Emitter Voltage

I

C

= 10mAdc, I

B

= 1.0mAdc

V

BE(sat)

1.0 Vdc

TO-72

2N918

3 PIN

2N918UB

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

T4-LDS-0010 Rev. 3 (101342) Page 2 of 4

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions Symbol Min. Max. Unit

Magnitude of Small-Signal Short-Circuit - Forward Current Transfer Ratio

I

C

= 4mAdc, V

CE

= 10Vdc, f = 100MHz

|h

fe

| 6.0 18

Output Capacitance

V

CB

= 0Vdc, I

E

= 0, 100kHz ≤ f ≤ 1.0MHz

V

CB

= 10Vdc, I

E

= 0, 100kHz ≤ f ≤ 1.0MHz

C

obo1

C

obo2

3.0

1.7

pF

Input Capacitance

V

EB

= 0.5Vdc, I

C

= 0, 100kHz ≤ f ≤ 1.0MHz

C

ibo

2.0 pF

Noise Figure (1)

V

CE

= 6V, I

C

= 1.0mA, f = 60MHz

g

s

= 2.5mmho

NF

6.0 dB

Small-Signal Power Gain (1)

V

CB

= 12V, I

C

= 6.0mA, f = 200MHz

G

pe

15

dB

Collector-Base Time Constant (1)

V

CB

= 10V, I

E

= -4.0mA, f = 79.8MHz

R

b’CC

25 ps

Oscillator Power Output (1)

V

CB

= 1.5V, I

C

= 8.0mA, f ≥ 500MHz

P

o

30

mW

Collector Efficiency

V

CB

= 15V, I

C

= 8.0mA, f > 500MHz

n 25

%

NOTES:

(1) For more detail see MIL-PRF-19500/301

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

T4-LDS-0010 Rev. 3 (101342) Page 3 of 4

PACKAGE DIMENSIONS

NOTES:

1. Dimension are in inches.

2. Millimeters are given for general information only.

3.

Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm).

4.

Dimension TL measured from maximum HD.

5.

Body contour optional within zone defined by HD, CD, and Q.

6.

Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.025 -0.00 mm) below seating plane shall be within .007 inch

(0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.

7.

Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is

uncontrolled in L1 and beyond LL minimum.

8.

All four leads.

9.

Dimension r (radius) applies to both inside corners of tab.

10.

In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

11.

Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected).

FIGURE 1. Physical dimensions for 2N918 (TO-72).

Symbol

Dimensions

Inches Millimeters Note

Min Max Min Max

CD .178 .195 4.52 4.95 5

CH .170 .210 4.32 5.33

HD .209 .230 5.31 5.84 5

LC .100 TP 2.54 TP 7,8

LD .016 .021 .406 .533 7,8

LL .500 .750 12.70 19.05 7,8

LU .016 .019 .406 .483

L1 .050 1 .27

L2 .250 6.35

P .100 2.54

Q .040 1.02 5

TL .028 .048 .71 1.22

TW .036 .046 .91 1.17

r .007 .18

α 45° TP

Part #	JANTXV2N918
Description	Bipolar Transistors - BJT Small-Signal BJT
Category	IC
Availability	In Stock
Qty	20

Qty	Price
1 - 4	$18.51176
5 - 8	$14.72526
9 - 12	$13.88382
13 - 16	$12.90214
17 +	$11.49973

Manufacturer	Available	Qty
Fairchild Semiconductor Date Code: 7840	Freelance Stock: 8 Ships Immediately
RAYTHEON SYSTEMS Date Code: 9100	Freelance Stock: 11 Ships Immediately
RAYTHEON SYSTEMS Date Code: 9222	Freelance Stock: 1 Ships Immediately

JANTXV2N918

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