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IRF6641PBF

Part # IRF6641PBF
Description A 200V Single N-Channel HEXFET Power Mosfet 32Pin MZ
Category IC
Availability In Stock
Qty 1796
Qty Price
1 - 28 $8.81673
29 - 71 $7.01331
72 - 151 $6.61255
152 - 325 $6.14499
326 + $5.47706
Manufacturer Available Qty
International Rectifier
Date Code: 0736
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

4
www.irf.com © 2013 International Rectifier
July 1, 2013
IRF6641TRPbF
0 1 10 100 1000
V
DS
, Drain-to- Source Voltage (V)
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
Tc = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
Fig 8. Maximum Safe Operating Area
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
, Source-to- Dr ain Voltage ( V)
0
1
10
100
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 150°C
T
J
= 25°C
T
J
= -40°C
V
GS
= 0V
25 50 75 100 125 150
T
A
, Ambient Temperatur e (°C)
0
1
2
3
4
5
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Fig 7. Typical Source-Drain Diode Forward Voltage
1E-006 1E- 005 0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
T
h
e
r
ma
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Fig 9. Maximum Drain Current vs. Ambient Temperature
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Tem perature ( °C )
2.0
3.0
4.0
5.0
6.0
T
y
p
i
c
a
l
V
G
S
(
t
h
)
,
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 150µA
I
D
= 250µA
I
D
= 1.0m A
I
D
= 1.0A
Fig 10. Typical Threshold Voltage vs.
Junction Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
www.irf.com © 2013 International Rectifier
July 1, 2013
IRF6641TRPbF
0 10 20 30 40 50 60
I
D
, Drain Current (A)
50
60
70
80
90
100
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
)
T
J
= 25°C
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
25 50 75 100 125 150
Starting T
J
, Junction Tem perature (°C)
0
20
40
60
80
100
120
140
160
180
200
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
3.7A
5.7A
BOTTOM 11A
4 6 8 10 12 14 16
V
GS,
Gate -to -Source Voltage (V)
0
20
40
60
80
100
120
140
160
180
200
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
)
I
D
= 5.5A
T
J
= 25°C
T
J
= 125°C
Fig 12. Typical On-Resistance vs. Gate Voltage
Fig 13. Typical On-Resistance vs. Drain Current
Fig 15a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
Fig 14. Maximum Avalanche Energy vs. Drain Current
t
p
V
(BR)DSS
I
AS
Fig 15b. Unclamped Inductive Waveforms
Fig 16a. Switching Time Test Circuit
Fig 16b. Switching Time Waveforms
Fig 17a. Gate Charge Test Circuit
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
Fig 17b. Gate Charge Waveform
VDD
Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs
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