4
www.irf.com © 2013 International Rectifier
July 1, 2013
IRF6641TRPbF
0 1 10 100 1000
V
DS
, Drain-to- Source Voltage (V)
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
Tc = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
Fig 8. Maximum Safe Operating Area
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
, Source-to- Dr ain Voltage ( V)
0
1
10
100
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 150°C
T
J
= 25°C
T
J
= -40°C
V
GS
= 0V
25 50 75 100 125 150
T
A
, Ambient Temperatur e (°C)
0
1
2
3
4
5
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Fig 7. Typical Source-Drain Diode Forward Voltage
1E-006 1E- 005 0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
T
h
e
r
ma
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Fig 9. Maximum Drain Current vs. Ambient Temperature
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Tem perature ( °C )
2.0
3.0
4.0
5.0
6.0
T
y
p
i
c
a
l
V
G
S
(
t
h
)
,
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 150µA
I
D
= 250µA
I
D
= 1.0m A
I
D
= 1.0A
Fig 10. Typical Threshold Voltage vs.
Junction Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient