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www.irf.com © 2013 International Rectifier
July 1, 2013
IRF6641TRPbF
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRF6641PbF DirectFET Medium Can Tape and Reel 4800 IRF6641TRPbF
SQ SX ST SH MQ MX MT MN
MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and
internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6641PbF device utilizes DirectFET
®
packaging technology. DirectFET
®
packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET
®
package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET
®
package
also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation.
These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter Max. Units
V
GS
Gate-to-Source Voltage ±20 V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 26
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 4.6
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 3.7 A
I
DM
Pulsed Drain Current 37
E
AS
Single Pulse Avalanche Energy 46 mJ
I
AR
Avalanche Current 11 A
P
D
@T
C
= 25°C Power Dissipation 89
P
D
@T
A
= 25°C Power Dissipation 2.8 W
P
D
@T
A
= 70°C Power Dissipation 1.8
Linear Derating Factor 0.022 W/°C
T
J
Operating Junction and -40 to + 150 °C
T
STG
Storage Temperature Range
Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details)
DIGITAL AUDIO MOSFET
DirectFET
®
ISOMETRIC
MZ
V
DS
200 V
R
DS(ON)
typ. @ V
GS
= 10V 51
m
Qg typ. 34 nC
R
G(int)
typ. 1.0
Key Parameters
Features
Latest MOSFET silicon technology
Key parameters optimized for Class-D audio amplifier
applications
Low R
DS(on)
for improved efficiency
Low Qg for better THD and improved efficiency
Low Qrr for better THD and lower EMI
Low package stray inductance for reduced ringing and lower
EMI
Can deliver up to 400 W per channel into 8load in half-bridge
configuration amplifier
Dual sided cooling compatible
Compatible with existing surface mount technologies
RoHS compliant, halogen-free
Lead-free (qualified up to 260°C reflow)
Notes through are on page 9
