IRS254(0,1)(S)PbF
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Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol Definition Min. Max. Units
IRS2540 -0.3 225
V
B
High-side floating supply voltage
IRS2541 -0.3 625
V
S
High-side floating supply offset voltage V
B
– 25 V
B
+ 0.3
V
HO
High-side floating output voltage V
S
– 0.3 V
B
+ 0.3
V
LO
Low-side output voltage -0.3 V
CC
+ 0.3
V
IFB
Feedback voltage -0.3 V
CC
+ 0.3
V
ENN
Enable voltage -0.3 V
CC
+ 0.3
V
I
CC
Supply current (Note 1) -20 20 mA
dV/dt Allowable offset voltage slew rate -50 50 V/ns
(8-Pin DIP) --- 1
P
D
Package power dissipation @ T
A
≤ +25 ºC
P
D
= (T
JMAX
-T
A
)/R
THJA
(8-Pin SOIC) --- 0.625
W
(8-Pin DIP) --- 125
R
THJA
Thermal resistance, junction to ambient
(8-Pin SOIC) --- 200
ºC/W
T
J
Junction temperature -55 150
T
S
Storage temperature -55 150
T
L
Lead temperature (soldering, 10 seconds) --- 300
ºC
Note 1: This IC contains a zener clamp structure between the chip V
CC
and COM, with a nominal breakdown voltage of
15.6 V. Please note that this supply pin should not be driven by a low impedance DC power source greater than V
CLAMP
specified in the electrical characteristics section.
Recommended Operating Conditions
For proper operation the device should be used within recommended conditions.
Symbol Definition Min. Max. Units
V
BS
High side floating supply voltage V
CC
– 0.7 V
CLAMP
IRS2540
-1 200
V
S
Steady state high-side floating supply offset voltage
IRS2541 -1 600
V
CC
Supply voltage V
CCUV+
V
CLAMP
V
I
CC
Supply current Note 2 10 mA
T
J
Junction temperature -25 125 ºC
Note 2: Sufficient current should be supplied to
V
CC
to keep the internal 15.6 V zener regulating at V
CLAMP
.
