IRF7455
2 www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.2 V T
J
= 25°C, I
S
= 2.5A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 64 96 ns T
J
= 25°C, I
F
= 2.5A
Q
rr
Reverse RecoveryCharge ––– 99 150 nC di/dt = 100A/µs
Diode Characteristics
2.5
120
A
Parameter Typ. Max. Units
E
AS
Single Pulse Avalanche Energy ––– 200 mJ
I
AR
Avalanche Current ––– 15 A
E
AR
Repetitive Avalanche Energy ––– 0.25 mJ
Avalanche Characteristics
Parameter Min. Typ. Max. Units Conditions
g
fs
Forward Transconductance 44 ––– ––– S V
DS
= 10V, I
D
= 15A
Q
g
Total Gate Charge ––– 37 56 I
D
= 15A
Q
gs
Gate-to-Source Charge ––– 8.9 13 nC V
DS
= 24V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 13 20 V
GS
= 5.0V,
t
d(on)
Turn-On Delay Time ––– 17 ––– V
DD
= 15V
t
r
Rise Time ––– 18 ––– I
D
= 1.0A
t
d(off)
Turn-Off Delay Time ––– 51 ––– R
G
= 6.0Ω
t
f
Fall Time ––– 44 ––– V
GS
= 4.5V
C
iss
Input Capacitance ––– 3480 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 870 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 100 ––– pF ƒ = 1.0MHz
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
Ω
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
––– 0.029 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 0.00600.0075 V
GS
= 10V, I
D
= 15A
––– 0.0069 0.009 V
GS
= 4.5V, I
D
= 12A
––– 0.010 0.020 V
GS
= 2.8V, I
D
= 3.5A
V
GS(th)
Gate Threshold Voltage 0.6 ––– 2.0 V V
DS
= V
GS
, I
D
= 250µA
––– ––– 20
µA
V
DS
= 24V, V
GS
= 0V
––– ––– 100 V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– 200 V
GS
= 12V
Gate-to-Source Reverse Leakage ––– ––– -200
nA
V
GS
= -12V
