IRF7105PbF

HEXFET

Power MOSFET

10/6/04

l Advanced Process Technology

l Ultra Low On-Resistance

l Dual N and P Channel Mosfet

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

l Lead-Free

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed

and ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements,

multiple devices can be used in an application with

dramatically reduced board space. The package is

designed for vapor phase, infra red, or wave soldering

techniques. Power dissipation of greater than 0.8W

is possible in a typical PCB mount application.

SO-8

Description

Max.

N-Channel P-Channel

@ T

= 25°C Continuous Drain Current, V

@ 10V 3.5 -2.3

@ T

= 70°C Continuous Drain Current, V

@ 10V 2.8 -1.8

Pulsed Drain Current  14 -10

= 25°C Power Dissipation 2.0

Linear Derating Factor 0.016 W/°C

Gate-to-Source Voltage ± 20 V

dv/dt Peak Diode Recovery dv/dt  3.0 -3.0 V/nS

STG

Junction and Storage Temperature Range -55 to + 150 °C

Parameter

Units

Absolute Maximum Ratings

Parameter Min. Typ. Max. Units

θJA

Maximum Junction-to-Ambient  



62.5 °C/W

Thermal Resistance Ratings

N-Ch P-Ch

DSS

25V -25V

DS(on)

0.10Ω 0.25Ω

3.5A -2.3A

Top View

P-CHANNEL MOSFET

N-CHANNEL MOSFET

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PD - 95164

IRF7105PbF

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(BR)DSS

Drain-to-Source Breakdown Voltage

∆V

(BR)DSS

/∆T

Breakdown Voltage Temp. Coefficient

DS(ON)

Static Drain-to-Source On-Resistance

GS(th)

Gate Threshold Voltage

Forward Transconductance

DSS

Drain-to-Source Leakage Current

Total GateCharge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

d(on)

Turn-On Delay Time

Rise Time

d(off)

Turn-Off Delay Time

Fall Time

iss

Input Capacitance

oss

Output Capacitance

rss

Reverse Transfer Capacitance

Parameter Min. Typ. Max. Units Conditions

N-Ch 25   V

= 0V, I

= 250µA

P-Ch -25   V

= 0V, I

= -250µA

N-Ch  0.030  Reference to 25°C, I

= 1mA

P-Ch  -0.015  Reference to 25°C, I

= -1mA

 0.083 0.10 V

= 10V, I

= 1.0A 

 0.14 0.16 V

= 4.5V, I

= 0.50A 

 0.16 0.25 V

= -10V, I

= -1.0A 

 0.30 0.40 V

= -4.5V, I

= -0.50A 

N-Ch 1.0  3.0 V

= V

, I

= 250µA

P-Ch -1.0  -3.0 V

= V

, I

= -250µA

N-Ch  4.3  V

= 15V, I

= 3.5A 

P-Ch  3.1  V

= -15V, I

= -3.5A 

N-Ch   2.0 V

= 20V, V

= 0V

P-Ch   -2.0 V

= -20V, V

= 0V,

N-Ch   25 V

= 20V, V

= 0V, T

= 55°C

P-Ch   -25 V

= -20V, V

= 0V, T

= 55°C

GSS

Gate-to-Source Forward Leakage N-P   ±100 V

= ± 20V

N-Ch  9.4 27

P-Ch  10 25

N-Ch  1.7 

P-Ch  1.9 

N-Ch  3.1 

P-Ch  2.8 

N-Ch  7.0 20

P-Ch  12 40

N-Ch  9.0 20

P-Ch  13 40

N-Ch  45 90

P-Ch  45 90

N-Ch  25 50

P-Ch  37 50

Internal Drain Inductace N-P  4.0  Between lead , 6mm (0.25in.)from

Internal Source Inductance N-P  6.0  package and center of die contact

N-Ch  330 

P-Ch  290 

N-Ch  250 

P-Ch  210 

N-Ch  61 

P-Ch  67 

Parameter Min. Typ. Max. Units Conditions

N-Ch   2.0

P-Ch   -2.0

N-Ch   14

P-Ch   -9.2

N-Ch   1.2 T

= 25°C, I

= 1.3A, V

= 0V 

P-Ch   -1.2 T

= 25°C, I

= -1.3A, V

= 0V 

N-Ch  36 54

P-Ch  69 100

N-Ch  41 75

P-Ch  90 180

Forward Turn-On Time N-P

 Repetitive rating; pulse width limited by

max. junction temperature.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

Notes:

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

Source-Drain Ratings and Characteristics

V/°C

Ω

µA

N-Channel

= 2.3A, V

= 12.5V, V

= 10V



P-Channel

= -2.3A, V

= -12.5V, V

= -10V

N-Channel

= 25V, I

= 1.0A, R

= 6.0Ω,

= 25Ω



P-Channel

= -25V, I

= -1.0A, R

= 6.0Ω,

= 25Ω

N-Channel

= 0V, V

= 15V,  = 1.0MHz

P-Channel

= 0V, V

= -15V,  = 1.0MHz

N-Ch

P-Ch

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode) 

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

N-Channel

= 25°C, I

= 1.3A, di/dt = 100A/µs

P-Channel 

= 25°C, I

= -1.3A, di/dt = 100A/µs

Intrinsic turn-on time is neglegible (turn-on is dominated by L

)

 N-Channel I

≤ 3.5A, di/dt ≤ 90A/µs, V

≤ V

(BR)DSS

, T

≤ 150°C

P-Channel I

≤ -2.3A, di/dt ≤ 90A/µs, V

≤ V

(BR)DSS

, T

≤ 150°C

 Surface mounted on FR-4 board, t ≤ 10sec.

IRF7105PbF

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Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 3. Typical Transfer Characteristics

N-Channel

, Drain-to-Source Current ( A )

DS (on)

, Drain-to-Source On Resistance

( Normalized)

, Drain-to-Source Current ( A )

C , Capacitance ( pF )

, Gate-to-Source Voltage ( V )

, Drain-to-Source Voltage ( V )

, Gate-to-Source Voltage ( V )

, Junction Temperature ( °C )

, Drain-to-Source Voltage ( V )

, Total Gate Charge ( nC )

Part #	IRF7105TR
Description	DUAL N/P CHANNEL MOSFET, 25V,SOIC, Transistor Polarity:N
Category	IC
Availability	Out of Stock
Qty	0

IRF7105TR

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Technical Document