Bulletin PD -2.336 rev. C 05/01
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low
I
RRM
• Very Low Q
rr
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Features
Description
International Rectifier's HFA30PA60C is a state of the art center tap ultra fast
recovery diode. Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier previously available.
With basic ratings of 600 volts and 15 amps per Leg continuous current, the
HFA30PA60C is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product
line features extremely low values of peak recovery current (I
RRM
) and does not
exhibit any tendency to "snap-off" during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA30PA60C is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
Ultrafast, Soft Recovery DiodeHEXFRED
TM
HFA30PA60C
Parameter Max. Units
V
R
Cathode-to-Anode Voltage 600 V
I
F
@ T
C
= 100°C Continuous Forward Current 15
I
FSM
Single Pulse Forward Current 150
I
FRM
Maximum Repetitive Forward Current 60
P
D
@ T
C
= 25°C Maximum Power Dissipation 74
P
D
@ T
C
= 100°C Maximum Power Dissipation 29
T
J
Operating Junction and
T
STG
Storage Temperature Range
Absolute Maximum Ratings (per Leg)
-55 to +150
W
A
C
V
R
= 600V
V
F
(typ.)* = 1.2V
I
F(AV)
= 15A
Q
rr
(typ.)= 80nC
I
RRM
(typ.)
= 4.0A
t
rr
(typ.)
= 19ns
di
(rec)M
/dt (typ.)* = 160A/µs
* 125°C
TO-247AC
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