January 2005
2005 Fairchild Semiconductor Corporation
FDS4885C Rev D(W)
FDS4885C
Dual N & P-Channel PowerTrench
MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
• Synchronous rectifier
• Backlight inverter stage
Features
• Q1: N-Channel
7.5A, 40V R
DS(on)
= 22mΩ @ V
GS
= 10V
R
DS(on)
= 35mΩ @ V
GS
= 7V
• Q2: P-Channel
–6A, –40V R
DS(on)
= 31mΩ @ V
GS
= –10V
R
DS(on)
= 42mΩ @ V
GS
= –4.5V
• Fast switching speed
• High power and handling capability in a widely
used surface mount package
S
D
S
S
SO-8
D
D
D
D1
D1
D2
D2
S1
G1
S2
G2
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol Parameter Q1 Q2 Units
V
DSS
Drain-Source Voltage 40 40 V
V
GSS
Gate-Source Voltage
±20 ±20
V
I
D
Drain Current - Continuous (Note 1a) 7.5 –6 A
- Pulsed 20 –20
P
D
Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 78
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 40
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS4885C FDS4885C 13” 12mm 2500 units
