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DS90C401M

Part # DS90C401M
Description IC DRV LVDS DUAL DIFF SGNL 8SOIC
Category IC
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National Semiconductor Corp
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

NRND
DS90C401
www.ti.com
SNLS002C JUNE 1998REVISED APRIL 2013
DS90C401 Dual Low Voltage Differential Signaling (LVDS) Driver
Check for Samples: DS90C401
1
FEATURES
DESCRIPTION
The DS90C401 is a dual driver device optimized for
2
Ultra Low Power Dissipation
high data rate and low power applications. This
Operates Above 155.5 Mbps
device along with the DS90C402 provides a pair chip
Standard TIA/EIA-644
solution for a dual high speed point-to-point interface.
The DS90C401 is a current mode driver allowing
8 Lead SOIC Package Saves Space
power dissipation to remain low even at high
Low Differential Output Swing typical 340 mV
frequency. In addition, the short circuit fault current is
also minimized. The device is in a 8 lead small
outline package. The differential driver outputs
provides low EMI with its low output swings typically
340 mV.
Connection Diagram
See Package Number D (SOIC)
Functional Diagram
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 1998–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
NRND
DS90C401
SNLS002C JUNE 1998REVISED APRIL 2013
www.ti.com
Absolute Maximum Ratings
(1)(2)
Supply Voltage (V
CC
) 0.3V to +6V
Input Voltage (D
IN
) 0.3V to (V
CC
+ 0.3V)
Output Voltage (D
OUT+
, D
OUT
) 0.3V to (V
CC
+ 0.3V)
Short Circuit Duration
(D
OUT+
, D
OUT
) Continuous
D Package 1068 mW
Maximum Package Power Dissipation @ +25°C
Derate D Package 8.5 mW/°C above +25°C
Storage Temperature Range 65°C to +150°C
Lead Temperature Range
Soldering (4 sec.) +260°C
Maximum Junction Temperature +150°C
ESD Rating
(3)
(HBM, 1.5 kΩ, 100 pF) 3,500V
(EIAJ, 0 Ω, 200 pF) 250V
(1) “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be ensured. They are not meant to imply
that the devices should be operated at these limits. Electrical Characteristics specifies conditions of device operation.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3) ESD Ratings:
HBM (1.5 kΩ, 100 pF) 3,500V
EIAJ (0Ω, 200 pF) 250V
Recommended OperatingConditions
Min Typ Max Units
Supply Voltage (V
CC
) +4.5 +5.0 +5.5 V
Operating Free Air Temperature (T
A
) 40 +25 +85 °C
Electrical Characteristics
Over supply voltage and operating temperature ranges, unless otherwise specified.
(1)(2)
Symbol Parameter Conditions Pin Min Typ Max Units
V
OD1
Differential Output Voltage R
L
= 100Ω (Figure 1) D
OUT
, 250 340 450 mV
D
OUT+
ΔV
OD1
Change in Magnitude of V
OD1
for 4 35 |mV|
Complementary Output States
V
OS
Offset Voltage 1.125 1.25 1.375 V
ΔV
OS
Change in Magnitude of V
OS
for 5 25 |mV|
Complementary Output States
V
OH
Output Voltage High R
L
= 100Ω 1.41 1.60 V
V
OL
Output Voltage Low 0.90 1.07 V
I
OS
Output Short Circuit Current V
OUT
= 0V
(3)
3.5 5.0 mA
V
IH
Input Voltage High D
IN
2.0 V
CC
V
V
IL
Input Voltage Low GND 0.8 V
I
I
Input Current V
IN
= V
CC
, GND, 2.5V or 0.4V 10 ±1 +10 μA
V
CL
Input Clamp Voltage I
CL
= 18 mA 1.5 0.8 V
I
CC
No Load Supply Current D
IN
= V
CC
or GND V
CC
1.7 3.0 mA
D
IN
= 2.5V or 0.4V 3.5 5.5 mA
I
CCL
Loaded Supply Current R
L
= 100Ω All Channels 8 14.0 mA
V
IN
= V
CC
or GND (all inputs)
(1) Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground
except: V
OD1
and ΔV
OD1
.
(2) All typicals are given for: V
CC
= +5.0V, T
A
= +25°C.
(3) Output short circuit current (I
OS
) is specified as magnitude only, minus sign indicates direction only.
2 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated
Product Folder Links: DS90C401
NRND
DS90C401
www.ti.com
SNLS002C JUNE 1998REVISED APRIL 2013
Switching Characteristics
V
CC
= +5.0V ±10%, T
A
= 40°C to +85°C
(1)(2)(3)(4)(5)
Symbol Parameter Conditions Min Typ Max Units
t
PHLD
Differential Propagation Delay High to Low R
L
= 100Ω, C
L
= 5 pF 0.5 2.0 3.5 ns
(Figure 2 and Figure 3)
t
PLHD
Differential Propagation Delay Low to High 0.5 2.1 3.5 ns
t
SKD
Differential Skew |t
PHLD
– t
PLHD
| 0 80 900 ps
t
SK1
Channel-to-Channel Skew
(2)
0 0.3 1.0 ns
t
SK2
Chip to Chip Skew
(3)
3.0 ns
t
TLH
Rise Time 0.35 2.0 ns
t
THL
Fall Time 0.35 2.0 ns
(1) All typicals are given for: V
CC
= +5.0V, T
A
= +25°C.
(2) Channel-to-Channel Skew is defined as the difference between the propagation delay of the channel and the other channels in the
same chip with an event on the inputs.
(3) Chip to Chip Skew is defined as the difference between the minimum and maximum specified differential propagation delays.
(4) Generator waveform for all tests unless otherwise specified: f = 1 MHz, Z
O
= 50Ω, t
r
6 ns, and t
f
6 ns.
(5) C
L
includes probe and jig capacitance.
Parameter Measurement Information
Figure 1. Driver V
OD
and V
OS
Test Circuit
Figure 2. Driver Propagation Delay and Transition Time Test Circuit
Copyright © 1998–2013, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Links: DS90C401
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