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DS18S20Z

Part # DS18S20Z
Description HI PRECIS MICROLAN DIG THERM8-SOIC - Rail/Tube
Category IC
Availability Out of Stock
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1 + $2.67388



Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

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FEATURES
Unique 1–Wire interface requires only one
port pin for communication
Multidrop capability simplifies distributed
temperature sensing applications
Requires no external components
Can be powered from data line. Power supply
range is 3.0V to 5.5V
Zero standby power required
Measures temperatures from –55°C to
+125°C. Fahrenheit equivalent is –67°F to
+257°F
±0.5°C accuracy from –10°C to +85°C
Temperature is read as a 9–bit digital value
Converts temperature to digital word in
750 ms (max.)
User–definable, nonvolatile temperature
alarm settings
Alarm search command identifies and
addresses devices whose temperature is
outside of programmed limits (temperature
alarm condition)
Functionally compatible with DS1820 1-Wire
digital thermometer
Applications include thermostatic controls,
industrial systems, consumer products,
thermometers, or any thermally sensitive
system
PIN ASSIGNMENT
PIN DESCRIPTION
GND - Ground
DQ - Data In/Out
V
DD
- Power Supply Voltage
NC - No Connect
DESCRIPTION
The DS18S20 Digital Thermometer provides 9–bit temperature readings which indicate the temperature
of the device.
Information is sent to/from the DS18S20 over a 1–Wire interface, so that only one wire (and ground)
needs to be connected from a central microprocessor to a DS18S20. Power for reading, writing, and
performing temperature conversions can be derived from the data line itself with no need for an external
power source.
Because each DS18S20 contains a unique silicon serial number, multiple DS18S20s can exist on the
same 1–Wire bus. This allows for placing temperature sensors in many different places. Applications
where this feature is useful include HVAC environmental controls, sensing temperatures inside buildings,
equipment or machinery, and process monitoring and control.
DS18S20
High Precision
1-Wire
®
Digital Thermomete
r
www.dalsemi.com
PRELIMINARY
DALLAS
DS18S20
1 2 3
GND
DQ
VDD
1 2 3
BOTTOM VIEW
DS18S20 To-92
Package
1
2
3
4
8
7
6
5
NC
NC
NC
GND
NC
NC
V
DD
DQ
DS18S20Z
8-Pin SOIC (150 mil)
DS18S20
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DETAILED PIN DESCRIPTION
PIN
8-PIN SOIC
PIN
TO92 SYMBOL DESCRIPTION
5 1 GND Ground.
42DQData Input/Output pin. For 1-Wire operation: Open drain.
(See “Parasite Power” section.)
33V
DD
Optional V
DD
pin. See “Parasite Power” section for details of
connection. V
DD
must be grounded for operation in parasite
power mode.
DS18S20Z (8-pin SOIC): All pins not specified in this table are not to be connected.
OVERVIEW
The block diagram of Figure 1 shows the major components of the DS18S20. The DS18S20 has three
main data components: 1) 64–bit lasered ROM, 2) temperature sensor, 3) nonvolatile temperature alarm
triggers TH and TL. The device derives its power from the 1–Wire communication line by storing energy
on an internal capacitor during periods of time when the signal line is high and continues to operate off
this power source during the low times of the 1–Wire line until it returns high to replenish the parasite
(capacitor) supply. As an alternative, the DS18S20 may also be powered from an external 3 volt – 5 volt
supply.
Communication to the DS18S20 is via a 1–Wire port. With the 1–Wire port, the memory and control
functions will not be available before the ROM function protocol has been established. The master must
first provide one of five ROM function commands: 1) Read ROM, 2) Match ROM, 3) Search ROM, 4)
Skip ROM, or 5) Alarm Search. These commands operate on the 64–bit lasered ROM portion of each
device and can single out a specific device if many are present on the 1–Wire line as well as indicate to
the bus master how many and what types of devices are present. After a ROM function sequence has
been successfully executed, the memory and control functions are accessible and the master may then
provide any one of the six memory and control function commands.
One control function command instructs the DS18S20 to perform a temperature measurement. The result
of this measurement will be placed in the DS18S20’s scratch-pad memory, and may be read by issuing a
memory function command which reads the contents of the scratchpad memory. The temperature alarm
triggers TH and TL consist of 1-byte EEPROM each. If the alarm search command is not applied to the
DS18S20, these registers may be used as general purpose user memory. Writing TH and TL is done
using a memory function command. Read access to these registers is through the scratchpad. All data is
read and written least significant bit first.
DS18S20
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DS18S20 BLOCK DIAGRAM Figure 1
PARASITE POWER
The block diagram (Figure 1) shows the parasite-powered circuitry. This circuitry “steals” power
whenever the DQ or V
DD
pins are high. DQ will provide sufficient power as long as the specified timing
and voltage requirements are met (see the section titled “1–Wire Bus System”). The advantages of
parasite power are twofold: 1) by parasiting off this pin, no local power source is needed for remote
sensing of temperature, and 2) the ROM may be read in absence of normal power.
In order for the DS18S20 to be able to perform accurate temperature conversions, sufficient power must
be provided over the DQ line when a temperature conversion is taking place. Since the operating current
of the DS18S20 is up to 1.5 mA, the DQ line will not have sufficient drive due to the 5k pullup resistor.
This problem is particularly acute if several DS18S20s are on the same DQ and attempting to convert
simultaneously.
There are two ways to assure that the DS18S20 has sufficient supply current during its active conversion
cycle. The first is to provide a strong pullup on the DQ line whenever temperature conversions or copies
to the E
2
memory are taking place. This may be accomplished by using a MOSFET to pull the DQ line
directly to the power supply as shown in Figure 2. The DQ line must be switched over to the strong
pull-up within 10 µs maximum after issuing any protocol that involves copying to the E
2
memory or
initiates temperature conversions. When using the parasite power mode, the V
DD
pin must be tied to
ground.
Another method of supplying current to the DS18S20 is through the use of an external power supply tied
to the V
DD
pin, as shown in Figure 3. The advantage to this is that the strong pullup is not required on the
DQ line, and the bus master need not be tied up holding that line high during temperature conversions.
This allows other data traffic on the 1–Wire bus during the conversion time. In addition, any number of
DS18S20s may be placed on the 1–Wire bus, and if they all use external power, they may all
simultaneously perform temperature conversions by issuing the Skip ROM command and then issuing the
Convert T command. Note that as long as the external power supply is active, the GND pin may not be
floating.
The use of parasite power is not recommended above 100°C, since it may not be able to sustain
communications given the higher leakage currents the DS18S20 exhibits at these temperatures. For
applications in which such temperatures are likely, it is strongly recommended that V
DD
be applied to the
DS18S20.
POWER
SUPPLY
SENSE
64-BIT ROM
AND
1-WIRE PORT
MEMORY AND
CONTROL LOGIC
SCRATCHPAD
8-BIT CRC
GENERATOR
TEMPERATURE
SENSOR
HIGH TEMPERATURE
TRIGGER, TH
LOW TEMPERATURE
TRIGGER, TH
DQ
V
DD
INTERNAL V
DD
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