DMN3051L
Document number: DS31347 Rev. 3 - 2
1 of 4
www.diodes.com
June 2008
© Diodes Incorporated
DMN3051L
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance:
R
DS(ON)
< 38mΩ @ V
GS
= 10V, I
D
= 5.8A
R
DS(ON)
< 64mΩ @ V
GS
= 4.5V, I
D
= 5.0A
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
SOT-23
TOP VIEW
Source
Gate
Drai
Equivalent Circuit
D
G
S
TOP VIEW
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20
V
Drain Current (Note 1) T
A
= 25°C
T
A
= 70°C
I
D
5.8
4.9
A
Drain Current (Note 1) Pulsed
I
DM
20 A
Body-Diode Continuous Current (Note 1)
I
S
2.0 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 1)
P
D
1.4 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 1)
R
θ
JA
90 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BV
DSS
30
⎯ ⎯
V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
800 nA
V
DS
= 28V, V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯ ⎯
±80
±800
nA
V
GS
= ±12V, V
DS
= 0V
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(th)
1.3 1.9 2.2 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
33
54
38
64
mΩ
V
GS
= 10V, I
D
= 5.8A
V
GS
= 4.5V, I
D
= 5.0A
Forward Transconductance
|Y
fs
|
⎯
5
⎯
S
V
DS
= 5V, I
D
= 3.1A
Source-Drain Diode Forward Voltage
V
SD
⎯
0.78 1.16 V
V
GS
= 0V, I
S
= 2.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
424
⎯
pF
Output Capacitance
C
oss
⎯
115
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
81
⎯
pF
V
DS
= 5V, V
GS
= 0V
f = 1.0MHz
Notes: 1. Device mounted on FR-4 PCB. t ≤5 sec.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
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