3
Absolute Maximum Ratings Thermal Information
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44.0V
GND to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Digital Inputs, V
S
, V
D
(Note 1). . . . . (V-) -2V to (V+) + 2V or 30mA,
Whichever Occurs First
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30mA
Peak Current, S or D (Pulsed 1ms, 10% Duty Cycle Max) . . 100mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40
o
C to 85
o
C
Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V (Max)
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8V (Max)
Input High Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4V (Min)
Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . ≤20ns
Thermal Resistance (Typical, Note 2) θ
JA
(
o
C/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Maximum Junction Temperature (Plastic Packages) . . . . . . .150
o
C
Maximum Storage Temperature Range. . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Signals on S
X
, D
X
or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
2. θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications (Dual Supply) Test Conditions: V+ = +15V, V- = -15V, V
IN
= 2.4V, 0.8V, V
ANALOG
=V
S
,V
D
,
Unless Otherwise Specified
PARAMETER TEST CONDITIONS
TEMP
(
o
C) MIN
(NOTE 3)
TYP MAX UNITS
DYNAMIC CHARACTERISTICS
Turn-ON Time, t
ON
R
L
= 1kΩ, C
L
= 35pF, V
S
= ±10V, (Figure 1) 25 - 150 250 ns
Turn-OFF Time, t
OFF
DG441 25 - 90 120 ns
DG442 - 110 210 ns
Charge Injection, Q (Figure 2) C
L
= 1nF, V
G
= 0V, R
G
= 0Ω 25 - -1 - pC
OFF Isolation (Figure 4) R
L
= 50Ω, C
L
= 5pF, f = 1MHz 25 - 60 - dB
Crosstalk (Channel-to-Channel) (Figure 3) 25 - -100 - dB
Source OFF Capacitance, C
S(OFF)
f = 1MHz, V
ANALOG
= 0 (Figure 5) 25 - 4 - pF
Drain OFF Capacitance, C
D(OFF)
25 - 4 - pF
Channel ON Capacitance,
C
D(ON)
+C
S(ON)
25 - 16 - pF
DIGITAL INPUT CHARACTERISTICS
Input Current V
IN
Low, I
IL
V
IN
Under Test = 0.8V, All Others = 2.4V Full -0.5 -0.00001 0.5 µA
Input Current V
IN
High, I
IH
V
IN
Under Test = 2.4V, All Others = 0.8V Full -0.5 0.00001 0.5 µA
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, V
ANALOG
Full -15 - 15 V
Drain-Source ON Resistance, r
DS(ON
)I
S
= 10mA, V
D
= ±8.5V, V+ = 13.5V,
V- = -13.5V
25 - 50 85 Ω
85 - - 100 Ω
Source OFF Leakage Current, I
S(OFF)
V+ = 16.5V, V- = -16.5V, V
D
= ±15.5V,
V
S
= 15.5V
25 -0.5 0.01 0.5 nA
85 -5 - 5 nA
Drain OFF Leakage Current, I
D(OFF)
25 -0.5 0.01 0.5 nA
85 -5 - 5 nA
Channel ON Leakage Current,
I
D(ON)
+I
S(ON)
V+ = 16.5V, V- = -16.5V, V
S
= V
D
= ±15.5V 25 -0.5 0.08 0.5 nA
85 -10 - 10 nA
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+ V+ = 16.5V, V- = -16.5V, V
IN
= 0V or 5V Full - 15 100 µA
Negative Supply Current, I- 25 -1 -0.0001 - µA
Full -5 - - µA
Ground Current, I
GND
Full -100 -15 - µA
DG441, DG442
