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DG409DQ

Part # DG409DQ
Description ANLG MUX DUAL 4:1 20V/36V 16TSSOP - Bulk
Category IC
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

www.vishay.com
4
Document Number: 70062
S-71155–Rev. G, 11-Jun-07
Vishay Siliconix
DG408/409
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
g. Δr
DS(on)
= r
DS(on)
MAX - r
DS(on)
MIN.
h. Worst case isolation occurs on Channel 4 due to proximity to the drain pin.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
FOR SINGLE SUPPLY
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
V
AL
= 0.8 V, V
AH
= 2.4 V
f
Temp
b
Typ
c
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Unit Min
d
Max
d
Min
d
Max
d
Analog Switch
Drain-Source
On-Resistance
e,f
r
DS(on)
V
D
= 3 V, 10 V, I
S
= - 1 mA
Room 90 Ω
Dynamic Characteristics
Switching Time of Multiplexer
e
t
TRANS
V
S1
= 8 V, V
S8
= 0 V, V
IN
= 2.4 V
Room 180
ns
Enable Turn-On Time
e
t
ON(EN)
V
INH
= 2.4 V, V
INL
= 0 V
V
S1
= 5 V
Room 180
Enable Turn-Off Time
e
t
OFF(EN)
Room 120
Charge Injection
e
Q
C
L
= 1 nF, V
S
= 6 V, R
S
= 0
Room 5 pC
Document Number: 70062
S-71155–Rev. G, 11-Jun-07
www.vishay.com
5
Vishay Siliconix
DG408/409
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source/Drain Capacitance vs. Analog Voltage
Drain Leakage Current vs. Source/DrainVoltage
Input Switching Threshold vs. Supply Voltage
(pF)C
S, D
V
ANALOG
– Analog Voltage (V)
015- 15
0
20
40
80
60
V+ = 15 V
V- = - 15 V
C
D(off)
C
S(off)
- 10 - 5 5 10
C
D(on)
DG408 I
D(on)
, I
D(off)
(pA)
I
D
V
D
or V
S
- Drain or Source Voltage (V)
015- 15
- 140
- 60
20
100
60
- 20
- 100
V+ = 15 V
V- = - 15 V
V
S
= -V
D
for I
D(off)
V
D
= V
S(open)
for I
D(on)
DG409 I
D(off)
- 10 - 5 5 10
DG409 I
D(on)
(V)
TH
V
+V
SUPPLY
(V)
12 2048 16
0.0
0.5
2.0
1.5
1.0
Drain Leakage Current vs. Source/Drain Voltage
(Single 12-V Supply)
Source Leakage Current vs. Source Voltage
Negative Supply Current vs. Switching Frequency
V
ANALOG
– Analog V oltage (V)
(pA)
I
D
12010624 8
- 60
- 40
- 20
60
40
0
20
DG408 I
D(off)
DG409 I
D(off)
DG409 I
D(on)
DG408 I
D(on)
V
S
= 0 V for I
D(off)
V
S
= V
D
for I
D(on)
V
S
- Source Voltage (V)
015- 15
- 10
0
10
20
15
5
- 5
V+ = 15 V
V- = - 15 V
V+ = 12 V
V- = 0 V
- 10 - 5 5 10
I
S(off)
(pA)
Switching Frequency (Hz)
10 k 10 M 1 0 0 1 k 100 k 1 M
V
SU PPL Y
= ± 15 V
- 100 mA
- 1 mA
- 100 µA
- 10 µA
- 1 µA
- 0.1 µA
- 10 mA
V
EN
= 2.4 V
V
EN
= 0 V or 5 V
I-
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6
Document Number: 70062
S-71155–Rev. G, 11-Jun-07
Vishay Siliconix
DG408/409
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Positive Supply Current vs. Switching Frequency
Positive Supply Current vs. Temperature (DG408)
r
DS(on)
vs. V
D
and Supply
Switching Frequency (Hz)
10 k 10 M100 1 k 100 k 1 M
V
SUPPLY
= 15 V
100 mA
10 mA
1 mA
100 µA
10 µA
V
EN
= 2.4 V
V
EN
= 0 V or 5 V
I+
I+ (µA)
Temperature (°C)
5
15
20
10
125- 55 85455
0
V+ = 15 V
V- = - 15 V
V
IN
= 0 V
V
EN
= 0 V
- 35 - 15 25 65 105
r
DS(on)
(Ω)
V
D
- Drain V oltage (V)
0
40
100
60
80
120
20
- 20 - 12 - 8 - 4 0 4 8 1 2 1 6 2 0- 16
± 5 V
± 8 V
± 10 V
± 12 V
± 20 V
± 15 V
I
SUPPLY
vs. Temperature
Charge Injection vs. Analog Voltage
r
DS(on)
vs. V
D
and Supply (Single Supply)
I+, I-
Temperature (°C)
125- 55 85 45 5
V
SU PPL Y
= ± 15 V
V
A
= 0 V
V
EN
= 0 V
I+
- (I-)
100 µA
1 µA
100 nA
10 nA
1 nA
100 pA
10 pA
10 µA
- 35 - 15 25 65 105
Q (pC)
V
S
- Source Voltage (V)
- 10
30
50
90
70
40
0
80
60
20
10
015- 15
- 10 - 5 5 10
V+ = 15 V
V- = - 15 V
V+ = 12 V
V- = 0 V
C
L
= 10000 pF
V
IN
= 5 Vp-p
r
DS(on)
(Ω)
V
D
- Drain Voltage (V)
220
0
40
100
60
140
160
80
120
20
4 8 12 16 20
V+ = 7.5 V
10 V
12 V
15 V
20 V
22 V
V- = 0 V
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