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DG409DQ

Part # DG409DQ
Description ANLG MUX DUAL 4:1 20V/36V 16TSSOP - Bulk
Category IC
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Vishay Siliconix
DG408/409
Document Number: 70062
S-71155–Rev. G, 11-Jun-07
www.vishay.com
1
8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers
FEATURES
Low On-Resistance - r
DS(on)
: 100 Ω
Low Charge Injection - Q: 20 pC
Fast Transition Time - t
TRANS
: 160 ns
Low Power - I
SUPPLY
: 10 µA
Single Supply Capability
44 V Supply Max Rating
TTL Compatible Logic
BENEFITS
Reduced Switching Errors
Reduced Glitching
Improved Data Throughput
Reduced Power Consumption
Increased Ruggedness
Wide Supply Ranges (± 5 V to ± 20 V)
APPLICATIONS
Data Acquisition Systems
Audio Signal Routing
ATE Systems
Battery Powered Systems
High Rel Systems
Single Supply Systems
Medical Instrumentation
DESCRIPTION
The DG408 is an 8-channel single-ended analog multiplexer
designed to connect one of eight inputs to a common output
as determined by a 3-bit binary address (A
0
, A
1
, A
2
). The
DG409 is a dual 4-channel differential analog multiplexer
designed to connect one of four differential inputs to a
common dual output as determined by its 2-bit binary
address (A
0
, A
1
). Break-before-make switching action
protects against momentary crosstalk between adjacent
channels.
An on channel conducts current equally well in both
directions. In the off state each channel blocks voltages up
to the power supply rails. An enable (EN) function allows the
user to reset the multiplexer/demultiplexer to all switches off
for stacking several devices. All control inputs, address (A
x
)
and enable (EN) are TTL compatible over the full specified
operating temperature range.
Applications for the DG408/409 include high speed data
acquisition, audio signal switching and routing, ATE
systems, and avionics. High performance and low power
dissipation make them ideal for battery operated and remote
instrumentation applications.
Designed in the 44 V silicon-gate CMOS process, the
absolute maximum voltage rating is extended to 44 V.
Additionally, single supply operation is also allowed. An
epitaxial layer prevents latchup.
For additional information please see Technical Article
TA201 (FaxBack Number 70600).
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
* Pb containing terminations are not RoHS compliant, exemptions may apply
S
3
A
0
S
6
D
S
4
A
1
S
8
S
7
EN
Dual-In-Line
SOIC and TSSOP
A
2
V- GND
S
1
V+
S
2
S
5
Decoders/Drivers
1
2
3
4
5
6
7
16
15
14
13
12
11
10
Top View
89
DG408
Dual-In-Line
SOIC and TSSOP
9
A
0
D
a
A
1
D
b
EN GND
V- V+
S
1a
S
1b
S
2a
S
2b
S
3a
S
3b
S
4a
S
4b
Decoders/Drivers
1
2
3
4
5
6
7
16
15
14
13
12
11
10
Top View
8
DG409
Available
Pb-free
RoHS*
COMPLIANT
www.vishay.com
2
Document Number: 70062
S-71155–Rev. G, 11-Jun-07
Vishay Siliconix
DG408/409
TRUTH TABLES AND ORDERING INFORMATION
Logic "0" = V
AL
0.8 V
Logic "1" = V
AH
2.4 V
X = Don’t Care
Notes:
a. Signals on S
X
, D
X
or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
f. Derate 10 mW/°C above 75 °C.
TRUTH TABLE - DG408
A
2
A
1
A
0
EN On Switch
X X X 0 None
0 0 0 1 1
0 0 1 1 2
0 1 0 1 3
0 1 1 1 4
1 0 0 1 5
1 0 1 1 6
1 1 0 1 7
1 1 1 1 8
TRUTH TABLE - DG409
A
1
A
0
EN On Switch
X X 0 None
0 0 1 1
0 1 1 2
1 0 1 3
1 1 1 4
ORDERING INFORMATION - DG408
Temp Range Package Part Number
- 40 to 85 °C
16-Pin Plastic DIP
DG408DJ
DG408DJ-E3
16-Pin SOIC
DG408DY
DG408DY-E3
DG408DY-T1
DG408DY-T1-E3
16-Pin TSSOP
DG408DQ
DG408DQ-E3
DG408DQ-T1
DG408DQ-T1-E3
ORDERING INFORMATION - DG409
Temp Range Package Part Number
- 40 to 85 °C
16-Pin Plastic DIP
DG409DJ
DG409DJ-E3
16-Pin SOIC
DG409DY
DG409DY-E3
DG409DY-T1
DG409DY-T1-E3
16-Pin TSSOP
DG409DQ
DG409DQ-E3
DG409DQ-T1
DG409DQ-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter Limit Unit
Voltages Referenced to V-
V+
44
V
GND
25
Digital Inputs
a
, V
S
, V
D
(V-) - 2 to (V+) + 2
or 20 mA, whichever occurs first
Current (Any Terminal) 30
mA
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max) 100
Storage Temperature
(AK Suffix)
- 65 to 150
°C
(DJ, DY Suffix)
- 65 to 125
Power Dissipation (Package)
b
16-Pin Plastic DIP
c
450
mW
16-Pin Narrow SOIC and TSSOP
d
600
16-Pin CerDIP
e
900
LCC-20
f
750
Document Number: 70062
S-71155–Rev. G, 11-Jun-07
www.vishay.com
3
Vishay Siliconix
DG408/409
SPECIFICATIONS
a
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
V
AL
= 0.8 V, V
AH
= 2.4 V
f
Temp
b
Typ
c
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Unit Min
d
Max
d
Min
d
Max
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full - 15 15 - 15 15 V
Drain-Source
On-Resistance
r
DS(on)
V
D
= ± 10 V, I
S
= - 10 mA
Room
Full
40 100
125
100
125
Ω
r
DS(on)
Matching Between Channels
g
Δr
DS(on)
V
D
= ± 10 V
Room 15 15 %
Source Off Leakage Current
I
S(off)
V
S
= ± 10 V
V
D
= ± 10 V, V
EN
= 0 V
Room
Full
- 0.5
- 50
0.5
50
- 0.5
- 5
0.5
5
nA
Drain Off Leakage Current
I
D(off)
V
D
= ± 10 V
V
S
= ± 10 V
V
EN
= 0 V
DG408
Room
Full
- 1
- 100
1
100
- 1
- 20
1
20
DG409
Room
Full
- 1
- 50
1
50
- 1
- 10
1
10
Drain On Leakage Current
I
D(on)
V
S
= V
D
= ± 10
Sequence Each
Switch On
DG408
Room
Full
- 1
- 100
1
100
- 1
- 20
1
20
DG409
Room
Full
- 1
- 50
1
50
- 1
- 10
1
10
Digital Control
Logic High Input Voltage
V
INH
Full 2.4 2.4
V
Logic Low Input Voltage
V
INL
Full 0.8 0.8
Logic High Input Current
I
AH
V
A
= 2.4 V, 15 V
Full - 10 10 - 10 10
µA
Logic Low Input Current
I
AL
V
EN
= 0 V, 2.4 V, V
A
= 0 V
Full - 10 10 - 10 10
Logic Input Capacitance
C
in
f = 1 MHz Room 8 pF
Dynamic Characteristics
Transition Time
t
TRANS
See Figure 2 Full 160 250 250
ns
Break-Before-Make Interval
t
OPEN
See Figure 4 Room 10 10
Enable Turn-On Time
t
ON(EN)
See Figure 3
Room
Full
115 150
225
150
Enable Turn-Off Time
t
OFF(EN)
Room 105 150 150
Charge Injection Q
C
L
= 10 nF, V
S
= 0 V
Room 20 pC
Off Isolation
h
OIRR
V
EN
= 0 V, R
L
= 1 kΩ
f = 100 kHz
Room - 75 dB
Source Off Capacitance
C
S(off)
V
EN
= 0 V, V
S
= 0 V, f = 1 MHz
Room 3
pF
Drain Off Capacitance
C
D(off)
V
EN
= 0 V
V
D
= 0 V
f = 1 MHz
DG408 Room 26
DG409 Room 14
Drain On Capacitance
C
D(on)
DG408 Room 37
DG409 Room 25
Power Supplies
Positive Supply Current I+
V
EN
= V
A
= 0 V or 5 V
Full 10 75 75
µA
Negative Supply Current I- Full 1 - 75 - 75
Positive Supply Current I+
V
EN
= 2.4 V, V
A
= 0 V
Room
Full
0.2 0.5
2
0.5
2
mA
Negative Supply Current I- Full - 500 - 500 µA
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