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DG3516DB-T5-E1

Part # DG3516DB-T5-E1
Description Analog Switch Dual SPDT 10-Pin Micro Foot T/R
Category IC
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Vishay Siliconix
DG3516/DG3517
Document Number: 73404
S-70853-Rev. C, 30-Apr-07
www.vishay.com
1
300-MHz, 2.5-Ω, Dual SPDT Analog Switches
FEATURES
1.8 V to 5.5 V Operation
•2.5 Ω at 2.7 V r
ON
300 MHz - 3 dB Bandwidth
ESD Method 3015.7 > 2 kV
Latch-Up Current 200 mA (JESD 78)
1.6 V Logic Compatible
BENEFITS
Space Saving MICRO FOOT
®
Package
High Linearity
Low Power Consumption
High Bandwidth
Full Rail Signal Swing Range
APPLICATIONS
Cellular Phones
•MP3
Media Players
Modems
Hard Drives
PCMCIA
DESCRIPTION
The DG3516/DG3517 are dual SPDT analog switches which
operate from 1.8 V to 5.5 V single rail power supply. They are
design for audio, video, and USB switching applications.
The devices have 2.5 Ω on-resistance and 300 MHz 3dB
bandwidth. 0.2 Ω on-resistance matching and 1 Ω flatness
make the device high linearity. The devices are 1.6 V logic
compatible within the full operation voltage range.
These switches are built on a sub-micron high density pro-
cess that brings low power consumption and low voltage per-
formance.
The switches are packaged in MICRO FOOT chip scale
package of 4 x 3 bump array.
As a committed partner to the community and environment,
Vishay Siliconix manufactures this product with the lead
(Pb)-free device terminations. For MICRO FOOT analog
switch products manufactured with tin/silver/copper
(SnAgCu) device termination, the lead (Pb)-free "-E1" suffix
is being used as a designator.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG3516/DG3517
MICRO FOOT 10-Bump
NC
2
NO
2
NO
1
NC
1
GND
V+
XXX
3516
A1 Locator
3516 = Example Base Part Number
xxx = Data/Lot Traceabiliity Code
NC
2
NO
2
1
IN
2
1
A
234
B
C
Top View
GND V+
IN
1
NC
1
NO
1
IN
2
IN
1
COM
2
COM
1
NO
2
NC
2
COM
1
IN
2
1
A
234
B
C
Top View
COM
2
GND V+
IN
1
NO
1
NC
1
DG3516
DG3517
Device Marking
COM
COM
2
TRUTH TABLE
Logic NC1 and NC2 NO1 and NO2
0 ON OFF
1OFFON
ORDERING INFORMATION
Temp Range Package Part Number
- 40 to 85 °C
MICRO FOOT: 10 Bump
(4 x 3, 0.5 mm Pitch,
238 µm Bump Height)
DG3516DB-T5-E1
DG3517DB-T5-E1
RoHS
COMPLIANT
www.vishay.com
2
Document Number: 73404
S-70853-Rev. C, 30-Apr-07
Vishay Siliconix
DG3516/DG3517
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. Refer to IPC/JEDEC (J-STD-020B)
c. All bumps welded or soldered to PC Board.
d. Derate 5.7 mW/°C above 70 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ABSOLUTE MAXIMUM RATINGS
Parameter Limit Unit
Reference V+ to GND - 0.3 to + 6
V
IN, COM, NC, NO
a
- 0.3 to (V+ + 0.3 V)
Continuous Current (NO, NC, COM) ± 100
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 200
Storage Temperature (D Suffix) - 65 to 150
°C
Package Solder Reflow Conditions
b
IR/Convection 250
ESD per Method 3015.7 > 2 kV
Power Dissipation (Packages)
c
MICRO FOOT: 10 Bump (4 x 3 mm)
d
457 mW
SPECIFICATIONS (V+ = 3 V)
Parameter Symbol
Test Conditions
Otherwise Unless Specified
V+ = 2.7 to 3.6 V, V
IN
= 0.5 V or 1.4 V
e
Temp
a
Limits
- 40 to 85 °C
Unit Min
b
Typ
c
Max
b
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full 0 V+ V
On-Resistance
d
r
ON
V+ = 2.7 V
I
NO
, I
NC
= 10 mA
V
COM
= 1.5 V
Room
Full
2.5 3.5
3.8
Ω
r
ON
Flatness
d
r
ON
Flatness
V
COM
= 1, 1.5, 2 V
Room 0.52 1.0
On-Resistance
Match Between Channels
d
Δr
DS(on)
V
COM
= 1.5 V
Room 0.25
Switch Off Leakage Current
I
NO(off)
I
NC(off)
V+ = 3.3 V,
V
NO
, V
NC
= 0.3 V/3 V, V
COM
= 3 V/0.3 V
Room
Full
- 2
- 20
2
20
nA
I
COM(off)
Room
Full
- 2
- 20
2
20
Channel-On Leakage Current
I
COM(on)
V+ = 3.3 V, V
NO
, V
NC
= V
COM
= 0.3 V/3 V
Room
Full
- 2
- 20
2
20
Digital Control
Input High Voltage
d
V
INH
Full 1.4
V
Input Low Voltage
V
INL
Full 0.5
Input Capacitance
C
in
Full 5 pF
Input Current
I
INL
or I
INH
V
IN
= 0 or V+
Full 1 1 µA
Document Number: 73404
S-70853-Rev. C, 30-Apr-07
www.vishay.com
3
Vishay Siliconix
DG3516/DG3517
SPECIFICATIONS (V+ = 3 V)
Parameter Symbol
Test Conditions
Otherwise Unless Specified
V+ = 2.7 to 3.6 V, V
IN
= 0.5 V or 1.4 V
e
Temp
a
Limits
- 40 to 85 °C
Unit Min
b
Typ
c
Max
b
Dynamic Characteristics
Tu r n - On T i m e
t
ON
V+ = 2.7 V, V
NO
or V
NC
= 1.5 V
R
L
= 300 Ω, C
L
= 35 pF
Room
Full
21 51
52
ns
Turn-Off Time
t
OFF
Room
Full
15 45
46
Break-Before-Make Time
t
d
Full 1
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 2.0 V, R
GEN
= 0 Ω
Room 1 pC
Off-Isolation
d
OIRR
R
L
= 50 Ω, C
L
= 5 pF
f = 1 MHz Room - 74
dB
f = 10 MHz Room - 54
Crosstalk
d
X
TA LK
f = 1 MHz Room - 76
f = 10 MHz Room - 56
N
O
, N
C
Off Capacitance
d
C
NO(off)
V
IN
= 0 or V+, f = 1 MHz
Room 12
pF
C
NC(off)
Room 12
Channel-On Capacitance
d
C
NO(on)
Room 40
C
NC(on)
Room 40
Power Supply
Power Supply Current I+
V
IN
= 0 or V+
Room
Full
1.0
1.0
µA
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