DF005M - DF10M
DF005M - DF10M
1.5 Ampere Bridge Rectifiers
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on PCB with 0.5 x 0.5" (13 x 13 mm).
Electrical Characteristics T
A
= 25°C unless otherwise noted
Discrete POWER & Signal
Technologies
ã1998 Fairchild Semiconductor Corporation
Features
• Surge overload rating: 50 amperes
peak.
• Glass passivated junction.
• Low leakage.
Parameter Device Units
005M 01M 02M 04M 06M 08M 10M
Peak Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
Maximum RMS Bridge Input Voltage 35 70 140 280 420 560 700 V
DC Reverse Voltage (Rated V
R
)
50 100 200 400 600 800 1000 V
Maximum Reverse Leakage,
total bridge @ rated V
R
T
A
= 25°C
T
A
= 125°C
5.0
500
µA
µA
Maximum Forward Voltage Drop,
per bridge @ 1.0 A 1.1 V
I
2
t rating for fusing t < 8.35 ms 10 A
2
Sec
Typical Junction Capacitance, per leg
V
R
= 4.0 V, f = 1.0 MHz
25 pF
Symbol Parameter Value Units
I
O
Average Rectified Current
@ T
A
= 40
°
C
1.5 A
i
f(surge)
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
50 A
P
D
Total Device Dissipation
Derate above 25
°
C
3.1
25
W
mW/
°
C
R
θ
JA
Thermal Resistance, Junction to Ambient,** per leg 40
°
C/W
T
stg
Storage Temperature Range -55 to +150
°
C
T
J
Operating Junction Temperature -55 to +150
°
C
DIP
+
0.315 (8.001)
0.285 (7.239)
0.255 (6.477)
0.245 (6.223)
0.075 (1.905)
0.055 (1.397)
0.335 (8.509)
0.320 (8.128)
0.350 (8.890)
0.300 (7.620)
0.185 (4.699)**
0.150 (3.810)**
0.130 (3.302)*
0.120 (3.408)*
0.205 (5.207)
0.195 (4.953)
0.045 (1.143)
0.035 (0.889)
0.022 (0.559)
0.018 (0.457)
LOW PROFILE ALSO AVAILABLE
BODY - - 0.102 (2.591)*
0.095 (2.413)*
LEAD - - 0.080 (2.032)**
0.050 (1.270)**
