International Rectifier 12CWQ04FN

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Item Description: Diode Schottky 40V 12A Automotive 3-Pin(2+Tab) DPAK

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1 + $0.37000






Technical Document


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SCHOTTKY RECTIFIER
12 Amp
12CWQ04FN
www.irf.com 1
Bulletin PD-20546 rev. G 06/04
Major Ratings and Characteristics
I
F(AV)
Rectangular 12 A
waveform
V
RRM
40 V
I
FSM
@ tp = 5 µs sine 550 A
V
F
@
6 Apk, T
J
= 125°C 0.48 V
(per leg)
T
J
range - 55 to 150 °C
Characteristics 12CWQ04FN Units
Description/ Features
The 12CWQ04FN surface mount, center tap, Schottky rectifier
series has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications are
in disk drives, switching power supplies, converters, free-
wheeling diodes, battery charging, and reverse battery
protection.
Popular D-PAK outline
Center tap configuration
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
Case Styles
12CWQ04FN
D-PAK
I
F(AV)
= 12Amp
V
R
= 40V
Anode
1
3
4
A
node
2
Base
Common
Cathode
Common
Cathode
12CWQ04FN
2
Bulletin PD-20546 rev. G 06/04
www.irf.com
V
FM
Max. Forward Voltage Drop 0.53 V @ 6A
(Per Leg) * See Fig. 1 (1) 0.68 V @ 12A
0.48 V @ 6A
0.64 V @ 12A
I
RM
Max. Reverse Leakage Current 3 mA T
J
= 25 °C
(Per Leg) * See Fig. 2 (1) 40 mA T
J
= 125 °C
V
F(TO)
Threshold Voltage 0.28 V T
J
= T
J
max.
r
t
Forward Slope Resistance 25.58 m
C
T
Typ. Junction Capacitance (Per Leg) 405 pF V
R
= 5V
DC
(test signal range 100Khz to 1Mhz) 25°C
L
S
Typical Series Inductance (Per Leg) 5.0 nH Measured lead to lead 5mm from package body
T
J
= 25 °C
T
J
= 125 °C
Electrical Specifications
(1) Pulse Width < 300µs, Duty Cycle <2%
V
R
= rated V
R
Part number 12CWQ04FN
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
Voltage Ratings
40
Parameters 12CWQ... Units Conditions
I
F(AV)
Max. Average Forward(Per Leg) 6 A 50% duty cycle @ T
C
= 134°C, rectangular wave form
Current* See Fig. 5 (Per Device) 12
I
FSM
Max. Peak One Cycle Non-Repetitive 550 5µs Sine or 3µs Rect. pulse
Surge Current * See Fig. 7 90 10ms Sine or 6ms Rect. pulse
E
AS
Non-Repet. Avalan. Energy (Per Leg) 9 mJ T
J
= 25 °C, I
AS
= 1.5 Amps, L = 8 mH
I
AR
Repetitive Avalanche Current 1.2 A Current decaying linearly to zero in 1 µsec
(Per Leg) Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Absolute Maximum Ratings
Following any rated
load condition and with
rated V
RRM
applied
A
Parameters 12CWQ... Units Conditions
< thermal runaway condition for a diode on its own heatsink
(*) dPtot 1
dTj Rth( j-a)
T
J
Max. Junction Temperature Range (*) -55 to 150 °C
T
stg
Max. Storage Temperature Range -55 to 150 °C
R
thJC
Max. Thermal Resistance(Per Leg) 3.0 °C/W DC operation * See Fig. 4
Junction to Case (Per Device) 1.5
wt Approximate Weight 0.3 (0.01) g (oz.)
Case Style D-Pak Similar to TO-252AA
Device Marking 12CWQ04FN
Thermal-Mechanical Specifications
Parameters 12CWQ... Units Conditions
12CWQ04FN
3
Bulletin PD-20546 rev. G 06/04
www.irf.com
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage (Per Leg)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (Per Leg)
Fig. 1 - Max. Forward Voltage Drop Characteristics
(Per Leg)
0.001
0.01
0.1
1
10
100
0 5 10 15 20 25 30 35 40
R
R
125°C
100°C
75°C
50°C
25°C
Reverse Current - I (mA)
T = 150°C
J
Reverse Voltage - V (V)
100
1000
0 5 10 15 20 25 30 35 40 45
R
T
Junction Capacitance - C (pF)
Reverse Voltage - V (V)
T = 25°C
J
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
thJC
t , Rectangular Pulse Duration (Seconds)
Single Pulse
( Th e r m a l Re si st a n c e )
1
Thermal Imped a nce Z (°C/ W)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
J
DM
thJC
C
1
2
2
t
1
t
P
DM
Notes:
1. Duty fac tor D = t / t
2. Peak T = P x Z + T
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Instantaneous Forward Current - I (A)
F
FM
Forward Volta ge Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
12NEXT

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