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CNY17F-1

Part # CNY17F-1
Description OPTOCOUPL DC-IN 1CH TRANS DC-OUT 6PDIP - Rail/Tube
Category IC
Availability Out of Stock
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

©2004 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
October 2005
CNY17X, CNY17FX, MOC810X Rev. 1.0.5
CNY17X, CNY17FX, MOC810X Phototransistor Optocouplers
CNY171, CNY172, CNY173, CNY174, CNY17F1, CNY17F2,
CNY17F3, CNY17F4, MOC8101, MOC8102, MOC8103,
MOC8104, MOC8105, MOC8106, MOC8107, MOC8108
Phototransistor Optocouplers
Features
CNY171/2/3/4 and CNY17F1/2/3/4 are also available in
white package by specifying M suffix (eg. CNY17F2M)
UL recognized (File # E90700)
VDE recognized
– Add option V for white package (e.g., CNY17F2VM)
– File #102497
– Add option ‘300’ for black package (e.g., CNY17F2300)
– File #94766
Current transfer ratio in select groups
High BV
CEO
—70V minimum (CNY17X/M, CNY17FX/M,
MOC8106/7/8)
Closely matched current transfer ratio (CTR) minimizes unit-
to-unit variation.
Very low coupled capacitance along with no chip to pin 6
base connection for minimum noise susceptability
(CNY17FX/M, MOC810X)
Applications
Power supply regulators
Digital logic inputs
Microprocessor inputs
Appliance sensor systems
Industrial controls
Description
The CNY17, CNY17F and MOC810X devices consist of a
Gallium Arsenide IRED coupled with an NPN phototransistor
in a dual in-line package.
White Package (-M Suffix) Black Package (No -M Suffix)
Schematic
6
1
6
1
6
1
6
1
6
6
1
1
CNY17F1/2/3/4 CNY171/2/3/4
1
2
6
5 COLLECTOR COLLECTOR
4 EMITTERNC NC
NC
ANODE
CATHODE
3
1
2
6
5
4EMITTER
BASE
ANODE
CATHODE
3
CNY17F1M/2M/3M/4M
MOC8101/2/3/4/5/6/7/8
CNY17F1M/2M/3M/4M
2
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CNY17X, CNY17FX, MOC810X Rev. 1.0.5
CNY17X, CNY17FX, MOC810X Phototransistor Optocouplers
Absolute Maximum Ratings
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
(1)
Parameters Symbol Device Value Units
TOTAL DEVICE
Storage Temperature T
STG
M -40 to +150 °C
non M -55 to +150
Operating Temperature T
OPR
M -40 to +100 °C
non M -55 to +100
Lead Solder Temperature T
SOL
All 260 for 10 sec °C
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
P
D
M 250 mW
non M 250
M 2.94 mW/°C
non M 3.30
EMITTER
Continuous Forward Current I
F
M60mA
non M 100
Reverse Voltage V
R
All 6 V
Forward Current - Peak (1 µs pulse, 300 pps) I
F
(pk) M 1.5 A
non M 1.0
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
P
D
M 120 mW
non M 150
M 1.41 mW/°C
non M 1.8
DETECTOR
Continuous Collector Current I
C
All 50 mA
Collector-Emitter Voltage V
CEO
CNY17X/M, CNY17FX/M,
MOC8106/7/8
70 V
MOC8101/2/3/4/5 30 V
Emitter Collector Voltage V
ECO
All 7 V
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
P
D
M 150 mW
non M 150
M 1.76 mW/°C
non M 2.0
Individual Component Characteristics
Parameters Test Conditions Symbol Device Min Typ Max Units
EMITTER
Input Forward Voltage I
F
= 60 mA V
F
CNY17FX/M
CNY17X/M
1.0 1.35 1.65 V
I
F
= 10 mA MOC810X 1.0 1.15 1.50
Capacitance V
F
= 0 V, f = 1.0 MHz C
J
All 18 pF
Reverse Leakage Current V
R
= 6 V I
R
All 0.001 10 µA
3
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CNY17X, CNY17FX, MOC810X Rev. 1.0.5
CNY17X, CNY17FX, MOC810X Phototransistor Optocouplers
Isolation Characteristics
Note
* 5300 Vac(rms) for 1 minute equates to approximately 9000 Vac (pk) for 1 second
** Typical values at T
A
= 25°C
DETECTOR
Breakdown Voltage
Collector to Emitter I
C
= 1.0 mA, I
F
= 0 BV
CEO
MOC8101/2/3/4/5 30 100 V
MOC8106/7/8
CNY17F1/2/3/4/M
CNY171/2/3/4/M
70 100
Collector to Base I
C
= 10 µA, I
F
= 0 BV
CBO
CNY171/2/3/4/M 70 120
Emitter to Collector I
E
= 100 µA, I
F
= 0 BV
ECO
All 7 10
Leakage Current
Collector to Emitter V
CE
= 10 V, I
F
= 0 I
CEO
All 1 50 nA
Collector to Base V
CB
= 10 V, I
F
= 0 I
CBO
CNY171/2/3/4/M 20 nA
Capacitance
Collector to Emitter V
CE
= 0, f = 1 MHz C
CE
All 8 pF
Collector to Base V
CB
= 0, f = 1 MHz C
CB
CNY171/2/3/4/M 20 pF
Emitter to Base V
EB
= 0, f = 1 MHz C
EB
CNY171/2/3/4/M 10 pF
Characteristic Test Conditions Symbol Device Min Typ** Max Units
Input-Output Isolation Voltage f = 60 Hz, t = 1 min. (4) V
ISO
Black Package 5300 Vac(rms)*
f = 60 Hz, t = 1 sec. (4) ‘M’ White Package 7500 Vac(pk)
Isolation Resistance V
I-O
= 500 VDC (4) R
ISO
All 10
11
Isolation Capacitance V
I-O
= Ø, f = 1 MHz (4) C
ISO
Black Package 0.5 pF
‘M’ White Package 0.2
Individual Component Characteristics (Continued)
Parameters Test Conditions Symbol Device Min Typ Max Units
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