C8051F040/1/2/3/4/5/6/7
Rev. 1.5 35
2. Absolute Maximum Ratings
Table 2.1. Absolute Maximum Ratings*
Parameter Conditions Min Typ Max Units
Ambient temperature under bias –55 — 125 °C
Storage Temperature –65 — 150 °C
Voltage on any Pin (except V
DD
, Port I/O, and JTAG
pins) with respect to DGND
–0.3 — V
DD
+
0.3
V
Voltage on any Port I/O Pin, /RST, and JTAG pins with
respect to DGND
–0.3 — 5.8 V
Voltage on V
DD
with respect to DGND –0.3 — 4.2 V
Maximum Total current through V
DD
, AV+, DGND,
and AGND
——800mA
Maximum output current sunk by any Port pin — — 100 mA
Maximum output current sunk by any other I/O pin — — 50 mA
Maximum output current sourced by any Port pin — — 100 mA
Maximum output current sourced by any other I/O pin — — 50 mA
*Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the devices at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Due to special I/O design requirements of the High Voltage Dif
ference Amplifier, undue electrical over-voltage
stress (i.e., ESD) experienced by these pads may result in impedance degradation of these inputs (HVAIN+
and HVAIN–). For this reason, care should be taken to ensure proper handling and use as typically required to
prevent ESD damage to electrostatically sensitive CMOS devices (e.g., static-free workstations, use of
grounding straps, over-voltage protection in end-applications, etc.)
