1997 Jun 18 3
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Notes to the Limiting values and Thermal characteristics
1. Device mounted on a ceramic substrate, 10 × 8 × 0.7 mm.
2. Device mounted on a printed-circuit board.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
drain-source voltage (DC) − 50 V
V
GSO
gate-source voltage (DC) open drain −±20 V
I
D
drain current (DC) − 100 mA
I
DM
peak drain current − 300 mA
P
tot
total power dissipation up to T
amb
=25°C; note 1 − 300 mW
up to T
amb
=25°C; note 2 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 430 K/W
note 2 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0; I
D
=10µA50−−V
V
GSth
gate-source threshold voltage V
DS
=V
GS
; I
D
= 1 mA 0.4 − 1.8 V
I
DSS
drain-source leakage current V
GS
= 0; V
DS
=40V −−1µA
I
GSS
gate-source leakage current V
DS
= 0; V
GS
= ±20 V −−±100 nA
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
= 100 mA − 815Ω
V
GS
=5V; I
D
= 100 mA − 14 20 Ω
V
GS
= 2.5 V; I
D
=10mA − 18 30 Ω
y
fs
forward transfer admittance V
DS
= 10 V; I
D
= 100 mA 40 80 − mS
C
iss
input capacitance V
GS
= 0; V
DS
=10V; f=1MHz − 815pF
C
oss
output capacitance V
GS
= 0; V
DS
=10V; f=1MHz − 715pF
C
rss
reverse transfer capacitance V
GS
= 0; V
DS
=10V; f=1MHz − 25pF
Switching times
t
on
turn-on time V
GS
= 0 to 10 V; V
DD
=20V;
I
D
= 100 mA
− 25ns
t
off
turn-off time V
GS
=10to0V; V
DD
=20V;
I
D
= 100 mA
− 510ns
