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BQ2201SN

Part # BQ2201SN
Description NONVOLATILE SRAM CONT BY ONE
Category IC
Availability Out of Stock
Qty 0
Qty Price
1 + $2.34066



Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

4
DC Electrical Characteristics (T
A
=T
OPR
,V
CC
= 5V
±
10%)
Symbol Parameter Minimum Typical Maximum Unit Conditions/Notes
I
LI
Input leakage current - -
±
1
µ
AV
IN
=V
SS
to V
CC
V
OH
Output high voltage 2.4 - - V I
OH
= -2.0mA
V
OHB
V
OH
, BC supply V
BC
- 0.3 - - V V
BC
>V
CC
,I
OH
= -10
µ
A
V
OL
Output low voltage - - 0.4 V I
OL
= 4.0mA
I
CC
Operating supply current - 3 5 mA No load on V
OUT
and CE
CON
.
V
PFD
Power-fail detect voltage
4.55 4.62 4.75 V THS = V
SS
4.30 4.37 4.50 V THS = V
CC
V
SO
Supply switch-over voltage - V
BC
-V
I
CCDR
Data-retention mode
current
- - 100 nA
V
OUT
data-retention current
to additional memory not in-
cluded.
V
OUT1
V
OUT
voltage
V
CC
- 0.2 - - V V
CC
>V
BC
,I
OUT
= 100mA
V
CC
- 0.3 - - V V
CC
>V
BC
,I
OUT
= 160mA
V
OUT2
V
OUT
voltage V
BC
- 0.3 - - V V
CC
<V
BC
,I
OUT
= 100
µ
A
V
BC
Active backup cell
voltage
-V
BC2
-VV
BC1
< 2.5V
-V
BC1
-VV
BC1
> 2.5V
I
OUT1
V
OUT
current - - 160 mA V
OUT
>V
CC
- 0.3V
I
OUT2
V
OUT
current - 100 -
µ
AV
OUT
>V
BC
- 0.2V
Note: Typical values indicate operation at T
A
= 25°C, V
CC
= 5V or V
BC
.
Oct. 1998 D
bq2201
5
AC Test Conditions
Parameter Test Conditions
Input pulse levels 0V to 3.0V
Input rise and fall times 5ns
Input and output timing reference levels 1.5V (unless otherwise specified)
Output load (including scope and jig) See Figure 3
FG220102.eps
5V
960
100pF
CE
CON
510
Figure 3. Output Load
Capacitance (T
A
= 25°C, F = 1MHz, V
CC
= 5.0V)
Symbol Parameter Minimum Typical Maximum Unit Conditions
C
IN
Input capacitance - - 8 pF Input voltage = 0V
C
OUT
Output capacitance - - 10 pF Output voltage = 0V
Note: This parameter is sampled and not 100% tested.
Oct. 1998 D
bq2201
6
TD220102.eps
V
CC
CE
CON
t
PF
t
FS
4.75
V
PFD
4.25
V
SO
t
WPT
V
OHB
CE
Power-Down Timing
Power-Fail Control
(TA = T
OPR
)
Symbol Parameter Minimum Typical Maximum Unit Notes
t
PF
V
CC
slew, 4.75V to 4.25V 300 - -
µ
s
t
FS
V
CC
slew, 4.25V to V
SO
10 - -
µ
s
t
PU
V
CC
slew, 4.25V to 4.75V 0 - -
µ
s
t
CED
Chip-enable propagation
delay
- 7 10 ns
t
CER
Chip-enable recovery 40 80 120 ms
Time during which SRAM is
write-protected after V
CC
passes V
PFD
on power-up.
t
WPT
Write-protect time 40 100 150
µ
s
Delay after V
CC
slews down
past V
PFD
before SRAM is
write-protected.
Note: Typical values indicate operation at T
A
= 25°C.
Caution: Negative undershoots below the absolute maximum rating of -0.3V in battery-backup mode
may affect data integrity.
Oct. 1998 D
bq2201
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