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27.7 Parallel Programming

27.7.1 Enter Programming Mode

The following algorithm puts the device in Parallel (High-voltage) Programming mode:

1. Set Prog_enable pins listed in Table 27-12 on page 291 to “0000”, RESET pin to 0V and

to 0V.

2. Apply 4.5 - 5.5V between V

and GND.

Ensure that V

reaches at least 1.8V within the next 20 µs.

3. Wait 20 - 60 µs, and apply 11.5 - 12.5V to RESET.

4. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been

applied to ensure the Prog_enable Signature has been latched.

5. Wait at least 300 µs before giving any parallel programming commands.

6. Exit Programming mode by power the device down or by bringing RESET pin to 0V.

If the rise time of the V

is unable to fulfill the requirements listed above, the following alterna-

tive algorithm can be used.

1. Set Prog_enable pins listed in Table 27-12 on page 291 to “0000”, RESET pin to 0V and

to 0V.

2. Apply 4.5 - 5.5V between V

and GND.

3. Monitor V

, and as soon as V

reaches 0.9 - 1.1V, apply 11.5 - 12.5V to RESET.

Table 27-13. XA1 and XA0 Coding

XA1 XA0 Action when XTAL1 is Pulsed

0 0 Load Flash or EEPROM Address (High or low address byte determined by BS1).

0 1 Load Data (High or Low data byte for Flash determined by BS1).

1 0 Load Command

1 1 No Action, Idle

Table 27-14. Command Byte Bit Coding

Command Byte Command Executed

1000 0000 Chip Erase

0100 0000 Write Fuse bits

0010 0000 Write Lock bits

0001 0000 Write Flash

0001 0001 Write EEPROM

0000 1000 Read Signature Bytes and Calibration byte

0000 0100 Read Fuse and Lock bits

0000 0010 Read Flash

0000 0011 Read EEPROM

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4. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been

applied to ensure the Prog_enable Signature has been latched.

5. Wait until V

actually reaches 4.5 -5.5V before giving any parallel programming

commands.

6. Exit Programming mode by power the device down or by bringing RESET pin to 0V.

27.7.2 Considerations for Efficient Programming

The loaded command and address are retained in the device during programming. For efficient

programming, the following should be considered.

• The command needs only be loaded once when writing or reading multiple memory locations.

• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the

EESAVE Fuse is programmed) and Flash after a Chip Erase.

• Address high byte needs only be loaded before programming or reading a new 256 word

window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes

reading.

27.7.3 Chip Erase

The Chip Erase will erase the Flash and EEPROM

(1)

memories plus Lock bits. The Lock bits are

not reset until the program memory has been completely erased. The Fuse bits are not

changed. A Chip Erase must be performed before the Flash and/or EEPROM are

reprogrammed.

Note: 1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.

Load Command “Chip Erase”

1. Set XA1, XA0 to “10”. This enables command loading.

2. Set BS1 to “0”.

3. Set DATA to “1000 0000”. This is the command for Chip Erase.

4. Give XTAL1 a positive pulse. This loads the command.

5. Give WR

a negative pulse. This starts the Chip Erase. RDY/BSY goes low.

6. Wait until RDY/BSY

goes high before loading a new command.

27.7.4 Programming the Flash

The Flash is organized in pages, see Table 27-9 on page 290. When programming the Flash,

the program data is latched into a page buffer. This allows one page of program data to be pro-

grammed simultaneously. The following procedure describes how to program the entire Flash

memory:

A. Load Command “Write Flash”

1. Set XA1, XA0 to “10”. This enables command loading.

2. Set BS1 to “0”.

3. Set DATA to “0001 0000”. This is the command for Write Flash.

4. Give XTAL1 a positive pulse. This loads the command.

B. Load Address Low byte

1. Set XA1, XA0 to “00”. This enables address loading.

2. Set BS1 to “0”. This selects low address.

3. Set DATA = Address low byte (0x00 - 0xFF).

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4. Give XTAL1 a positive pulse. This loads the address low byte.

C. Load Data Low Byte

1. Set XA1, XA0 to “01”. This enables data loading.

2. Set DATA = Data low byte (0x00 - 0xFF).

3. Give XTAL1 a positive pulse. This loads the data byte.

D. Load Data High Byte

1. Set BS1 to “1”. This selects high data byte.

2. Set XA1, XA0 to “01”. This enables data loading.

3. Set DATA = Data high byte (0x00 - 0xFF).

4. Give XTAL1 a positive pulse. This loads the data byte.

E. Latch Data

1. Set BS1 to “1”. This selects high data byte.

2. Give PAGEL a positive pulse. This latches the data bytes. (See Figure 27-3 for signal

waveforms)

F. Repeat B through E until the entire buffer is filled or until all data within the page is loaded.

While the lower bits in the address are mapped to words within the page, the higher bits address

the pages within the FLASH. This is illustrated in Figure 27-2 on page 295. Note that if less than

eight bits are required to address words in the page (pagesize < 256), the most significant bit(s)

in the address low byte are used to address the page when performing a Page Write.

G. Load Address High byte

1. Set XA1, XA0 to “00”. This enables address loading.

2. Set BS1 to “1”. This selects high address.

3. Set DATA = Address high byte (0x00 - 0xFF).

4. Give XTAL1 a positive pulse. This loads the address high byte.

H. Program Page

1. Give WR

a negative pulse. This starts programming of the entire page of data. RDY/BSY

goes low.

2. Wait until RDY/BSY

goes high (See Figure 27-3 for signal waveforms).

I. Repeat B through H until the entire Flash is programmed or until all data has been

programmed.

J. End Page Programming

1. 1. Set XA1, XA0 to “10”. This enables command loading.

2. Set DATA to “0000 0000”. This is the command for No Operation.

3. Give XTAL1 a positive pulse. This loads the command, and the internal write signals are

reset.

Part #	ATMEGA48-20AU
Description	MCU 8BIT ATMEGA RISC 4KB FLASH 3.3V/5V 32TQFP - Trays
Category	IC
Availability	Out of Stock
Qty	0

ATMEGA48-20AU

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