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ATMEGA48-20AU

Part # ATMEGA48-20AU
Description MCU 8BIT ATMEGA RISC 4KB FLASH 3.3V/5V 32TQFP - Trays
Category IC
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

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25.2.1 EEPROM Write Prevents Writing to SPMCSR
Note that an EEPROM write operation will block all software programming to Flash. Reading the
Fuses and Lock bits from software will also be prevented during the EEPROM write operation. It
is recommended that the user checks the status bit (EEPE) in the EECR Register and verifies
that the bit is cleared before writing to the SPMCSR Register.
25.2.2 Reading the Fuse and Lock Bits from Software
It is possible to read both the Fuse and Lock bits from software. To read the Lock bits, load the
Z-pointer with 0x0001 and set the BLBSET and SELFPRGEN bits in SPMCSR. When an LPM
instruction is executed within three CPU cycles after the BLBSET and SELFPRGEN bits are set
in SPMCSR, the value of the Lock bits will be loaded in the destination register. The BLBSET
and SELFPRGEN bits will auto-clear upon completion of reading the Lock bits or if no LPM
instruction is executed within three CPU cycles or no SPM instruction is executed within four
CPU cycles. When BLBSET and SELFPRGEN are cleared, LPM will work as described in the
Instruction set Manual.
The algorithm for reading the Fuse Low byte is similar to the one described above for reading
the Lock bits. To read the Fuse Low byte, load the Z-pointer with 0x0000 and set the BLBSET
and SELFPRGEN bits in SPMCSR. When an LPM instruction is executed within three cycles
after the BLBSET and SELFPRGEN bits are set in the SPMCSR, the value of the Fuse Low byte
(FLB) will be loaded in the destination register as shown below.See Table 27-5 on page 288 for
a detailed description and mapping of the Fuse Low byte.
Similarly, when reading the Fuse High byte (FHB), load 0x0003 in the Z-pointer. When an LPM
instruction is executed within three cycles after the BLBSET and SELFPRGEN bits are set in the
SPMCSR, the value of the Fuse High byte will be loaded in the destination register as shown
below. See Table 27-4 on page 287 for detailed description and mapping of the Extended Fuse
byte.
Similarly, when reading the Extended Fuse byte (EFB), load 0x0002 in the Z-pointer. When an
LPM instruction is executed within three cycles after the BLBSET and SELFPRGEN bits are set
in the SPMCSR, the value of the Extended Fuse byte will be loaded in the destination register as
shown below. See Table 27-5 on page 288 for detailed description and mapping of the Extended
Fuse byte.
Fuse and Lock bits that are programmed, will be read as zero. Fuse and Lock bits that are
unprogrammed, will be read as one.
25.2.3 Preventing Flash Corruption
During periods of low V
CC
, the Flash program can be corrupted because the supply voltage is
too low for the CPU and the Flash to operate properly. These issues are the same as for board
level systems using the Flash, and the same design solutions should be applied.
Bit 76543210
Rd ––––––LB2LB1
Bit 76543210
Rd FLB7 FLB6 FLB5 FLB4 FLB3 FLB2 FLB1 FLB0
Bit 76543210
Rd FHB7 FHB6 FHB5 FHB4 FHB3 FHB2 FHB1 FHB0
Bit 76543210
Rd FHB7 FHB6 FHB5 FHB4 FHB3 FHB2 FHB1 FHB0
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A Flash program corruption can be caused by two situations when the voltage is too low. First, a
regular write sequence to the Flash requires a minimum voltage to operate correctly. Secondly,
the CPU itself can execute instructions incorrectly, if the supply voltage for executing instructions
is too low.
Flash corruption can easily be avoided by following these design recommendations (one is
sufficient):
1. Keep the AVR RESET active (low) during periods of insufficient power supply voltage.
This can be done by enabling the internal Brown-out Detector (BOD) if the operating volt-
age matches the detection level. If not, an external low V
CC
reset protection circuit can be
used. If a reset occurs while a write operation is in progress, the write operation will be
completed provided that the power supply voltage is sufficient.
2. Keep the AVR core in Power-down sleep mode during periods of low V
CC
. This will pre-
vent the CPU from attempting to decode and execute instructions, effectively protecting
the SPMCSR Register and thus the Flash from unintentional writes.
25.2.4 Programming Time for Flash when Using SPM
The calibrated RC Oscillator is used to time Flash accesses. Table 26-5 shows the typical pro-
gramming time for Flash accesses from the CPU.
Note: 1. Minimum and maximum programming time is per individual operation.
25.2.5 Simple Assembly Code Example for a Boot Loader
Note that the RWWSB bit will always be read as zero in ATmega48. Nevertheless, it is recom-
mended to check this bit as shown in the code example, to ensure compatibility with devices
supporting Read-While-Write.
;-the routine writes one page of data from RAM to Flash
; the first data location in RAM is pointed to by the Y pointer
; the first data location in Flash is pointed to by the Z-pointer
;-error handling is not included
;-the routine must be placed inside the Boot space
; (at least the Do_spm sub routine). Only code inside NRWW section can
; be read during Self-Programming (Page Erase and Page Write).
;-registers used: r0, r1, temp1 (r16), temp2 (r17), looplo (r24),
; loophi (r25), spmcrval (r20)
; storing and restoring of registers is not included in the routine
; register usage can be optimized at the expense of code size
;-It is assumed that either the interrupt table is moved to the Boot
; loader section or that the interrupts are disabled.
.equ PAGESIZEB = PAGESIZE*2 ;PAGESIZEB is page size in BYTES, not words
.org SMALLBOOTSTART
Write_page:
; Page Erase
ldi spmcrval, (1<<PGERS) | (1<<SELFPRGEN)
rcallDo_spm
; re-enable the RWW section
ldi spmcrval, (1<<RWWSRE) | (1<<SELFPRGEN)
Table 25-1. SPM Programming Time
(1)
Symbol Min Programming Time Max Programming Time
Flash write (Page Erase, Page Write, and
write Lock bits by SPM)
3.7 ms 4.5 ms
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rcallDo_spm
; transfer data from RAM to Flash page buffer
ldi looplo, low(PAGESIZEB) ;init loop variable
ldi loophi, high(PAGESIZEB) ;not required for PAGESIZEB<=256
Wrloop:
ld r0, Y+
ld r1, Y+
ldi spmcrval, (1<<SELFPRGEN)
rcallDo_spm
adiw ZH:ZL, 2
sbiw loophi:looplo, 2 ;use subi for PAGESIZEB<=256
brne Wrloop
; execute Page Write
subi ZL, low(PAGESIZEB) ;restore pointer
sbci ZH, high(PAGESIZEB) ;not required for PAGESIZEB<=256
ldi spmcrval, (1<<PGWRT) | (1<<SELFPRGEN)
rcallDo_spm
; re-enable the RWW section
ldi spmcrval, (1<<RWWSRE) | (1<<SELFPRGEN)
rcallDo_spm
; read back and check, optional
ldi looplo, low(PAGESIZEB) ;init loop variable
ldi loophi, high(PAGESIZEB) ;not required for PAGESIZEB<=256
subi YL, low(PAGESIZEB) ;restore pointer
sbci YH, high(PAGESIZEB)
Rdloop:
lpm r0, Z+
ld r1, Y+
cpse r0, r1
rjmp Error
sbiw loophi:looplo, 1 ;use subi for PAGESIZEB<=256
brne Rdloop
; return to RWW section
; verify that RWW section is safe to read
Return:
in temp1, SPMCSR
sbrs temp1, RWWSB ; If RWWSB is set, the RWW section is not ready yet
ret
; re-enable the RWW section
ldi spmcrval, (1<<RWWSRE) | (1<<SELFPRGEN)
rcallDo_spm
rjmp Return
Do_spm:
; check for previous SPM complete
Wait_spm:
in temp1, SPMCSR
sbrc temp1, SELFPRGEN
rjmp Wait_spm
; input: spmcrval determines SPM action
; disable interrupts if enabled, store status
in temp2, SREG
cli
; check that no EEPROM write access is present
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