314
2545M–AVR–09/07
Figure 28-9. Parallel Programming Timing, Reading Sequence (within the Same Page) with
Timing Requirements
(1)
Note: 1. The timing requirements shown in Figure 28-7 (i.e., t
DVXH
, t
XHXL
, and t
XLDX
) also apply to read-
ing operation.
Table 28-8. Parallel Programming Characteristics, V
CC
= 5V ± 10%
Symbol Parameter Min Typ Max Units
V
PP
Programming Enable Voltage 11.5 12.5 V
I
PP
Programming Enable Current 250 μA
t
DVXH
Data and Control Valid before XTAL1 High 67 ns
t
XLXH
XTAL1 Low to XTAL1 High 200 ns
t
XHXL
XTAL1 Pulse Width High 150 ns
t
XLDX
Data and Control Hold after XTAL1 Low 67 ns
t
XLWL
XTAL1 Low to WR Low 0 ns
t
XLPH
XTAL1 Low to PAGEL high 0 ns
t
PLXH
PAGEL low to XTAL1 high 150 ns
t
BVPH
BS1 Valid before PAGEL High 67 ns
t
PHPL
PAGEL Pulse Width High 150 ns
t
PLBX
BS1 Hold after PAGEL Low 67 ns
t
WLBX
BS2/1 Hold after WR Low 67 ns
t
PLWL
PAGEL Low to WR Low 67 ns
t
BVWL
BS1 Valid to WR Low 67 ns
t
WLWH
WR Pulse Width Low 150 ns
t
WLRL
WR Low to RDY/BSY Low 0 1 μs
t
WLRH
WR Low to RDY/BSY High
(1)
3.7 4.5 ms
t
WLRH_CE
WR Low to RDY/BSY High for Chip Erase
(2)
7.5 9 ms
TAL1
OE
ADDR0 (Low Byte) DATA (Low Byte)
DATA (High Byte)
ADDR1 (Low Byte)
DATA
BS1
XA0
XA1
LOAD ADDRESS
(LOW BYTE)
READ DATA
(LOW BYTE)
READ DATA
(HIGH BYTE)
LOAD ADDRESS
(LOW BYTE)
t
BVDV
t
OLDV
t
XLOL
t
OHDZ
