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AT45DB081D-SU-2.5

Part # AT45DB081D-SU-2.5
Description DATAFLASH, 8M, SERIAL, 2.5V -IND TEMP, GREEN 8 LEAD SOIC
Category IC
Availability Out of Stock
Qty 0
Qty Price
1 + $0.65000

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

43
3596E–DFLASH–02/07
AT45DB081D
24.6 Buffer Read (Low Frequency: Opcode D1H or D3H)
24.7 Read Sector Protection Register (Opcode 32H)
24.8 Read Sector Lockdown Register (Opcode 35H)
SCK
CS
SI
SO
MSB MSB
2310
11010001
675410119812 373833 36353431 3229 30 39 40
OPCODE
XXXX AAAXX
MSB MSB
DDDDDDDDDD
DATA BYTE 1
HIGH-IMPEDANCE
ADDRESS BITS
BINARY PAGE SIZE = 16 DON'T CARE + BFA7-BFA0
STANDARD DATAFLASH PAGE SIZE =
15 DON'T CARE + BFA8-BFA0
SCK
CS
SI
SO
MSB MSB
2310
00110010
6754101198 12 37 3833 36353431 3229 30 39 40
OPCODE
XXXX XXXXX
MSB MSB
DDDDDDDDD
DON'T CARE
DATA BYTE 1
HIGH-IMPEDANCE
SCK
CS
SI
SO
MSB MSB
2310
00110101
6754101198 12 37 3833 36353431 3229 30 39 40
OPCODE
XXXX XXXXX
MSB MSB
DDDDDDDDD
DON'T CARE
DATA BYTE 1
HIGH-IMPEDANCE
44
3596E–DFLASH–02/07
AT45DB081D
24.9 Read Security Register (Opcode 77H)
24.10 Status Register Read (Opcode D7H)
24.11 Manufacturer and Device Read (Opcode 9FH)
SCK
CS
SI
SO
MSB MSB
2310
01110111
6754101198 12 37 3833 36353431 3229 30 39 40
OPCODE
XXXX XXXXX
MSB MSB
DDDDDDDDD
DON'T CARE
DATA BYTE 1
HIGH-IMPEDANCE
SCK
CS
SI
SO
MSB
2310
11010111
675410119812 212217 20191815 1613 14 23 24
OPCODE
MSB MSB
DDDDDD DDDD
MSB
DDDDDDDD
STATUS REGISTER DATA STATUS REGISTER DATA
HIGH-IMPEDANCE
SCK
CS
SI
SO
60
9FH
87 38
OPCODE
1FH DEVICE ID BYTE 1 DEVICE ID BYTE 2 00H
HIGH-IMPEDANCE
14 1615 22 2423 30 3231
Note: Each transition shown for SI and SO represents one byte (8 bits)
45
3596E–DFLASH–02/07
AT45DB081D
25. Auto Page Rewrite Flowchart
Figure 25-1. Algorithm for Programming or Reprogramming of the Entire Array Sequentially
Notes: 1. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-by-
page.
2. A page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer
to Main Memory Page Program operation.
3. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each page
within the entire array.
START
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
(82H, 85H)
END
provide address
and data
BUFFER WRITE
(84H, 87H)
BUFFER TO MAIN
MEMORY PAGE PROGRAM
(83H, 86H)
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