34
3596E–DFLASH–02/07
AT45DB081D
Table 18-4. AC Characteristics – RapidS/Serial Interface
Symbol Parameter
AT45DB081D
(2.5V Version) AT45DB081D
Min Typ Max Min Typ Max Units
f
SCK
SCK Frequency 50 66 MHz
f
CAR1
SCK Frequency for Continuous Array Read 50 66 MHz
f
CAR2
SCK Frequency for Continuous Array Read
(Low Frequency)
33 33 MHz
t
WH
SCK High Time 6.8 6.8 ns
t
WL
SCK Low Time 6.8 6.8 ns
t
SCKR
(1)
SCK Rise Time, Peak-to-Peak (Slew Rate) 0.1 0.1 V/ns
t
SCKF
(1)
SCK Fall Time, Peak-to-Peak (Slew Rate) 0.1 0.1 V/ns
t
CS
Minimum CS High Time 50 50 ns
t
CSS
CS Setup Time 5 5 ns
t
CSH
CS Hold Time 5 5 ns
t
SU
Data In Setup Time 2 2 ns
t
H
Data In Hold Time 3 3 ns
t
HO
Output Hold Time 0 0 ns
t
DIS
Output Disable Time 8 6 ns
t
V
Output Valid 8 6 ns
t
WPE
WP Low to Protection Enabled 1 1 µs
t
WPD
WP High to Protection Disabled 1 1 µs
t
EDPD
CS High to Deep Power-down Mode 3 3 µs
t
RDPD
CS High to Standby Mode 30 30 µs
t
XFR
Page to Buffer Transfer Time 200 200 µs
t
comp
Page to Buffer Compare Time 200 200 µs
t
EP
Page Erase and Programming Time
(256/264 bytes)
14 35 14 35 ms
t
P
Page Programming Time (256/264 bytes) 2 4 2 4 ms
t
PE
Page Erase Time (256/264 bytes) 13 32 13 32 ms
t
BE
Block Erase Time (2,048/2,112 bytes) 30 75 30 75 ms
t
SE
Sector Erase Time (65,536/67,584) 1.6 5 1.6 5 s
t
CE
Chip Erase Time TBD TBD TBD TBD s
t
RST
RESET Pulse Width 10 10 µs
t
REC
RESET Recovery Time 1 1 µs
