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AT45DB081D-SU-2.5

Part # AT45DB081D-SU-2.5
Description DATAFLASH, 8M, SERIAL, 2.5V -IND TEMP, GREEN 8 LEAD SOIC
Category IC
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

31
3596E–DFLASH–02/07
AT45DB081D
Notes: P = Page Address Bit B = Byte/Buffer Address Bit x = Don’t Care
Table 15-7. Detailed Bit-level Addressing Sequence for the DataFlash Standard Page Size (264 Bytes)
Page Size = 264 bytes Address Byte Address Byte Address Byte
Additional
Don’t Care
BytesOpcode Opcode
Reserved
Reserved
Reserved
PA11
PA10
PA9
PA8
PA7
PA6
PA5
PA4
PA3
PA2
PA1
PA0
BA8
BA7
BA6
BA5
BA4
BA3
BA2
BA1
BA0
03h 0 0 0 0 0 0 1 1 x x xPPPP P PPPPPPPB BBBBBBB B
N/A
0Bh 0 0 0 0 1 0 1 1 x x xPPPP P PPPPPPPB BBBBBBB B
1
50h 01010000 xxxPPPPPPPPPxxx x xxxxxxx x
N/A
53h 0 1 0 1 0 0 1 1 x x xPPPP P PPPPPPP x x x x x x x x x
N/A
55h 0 1 0 1 0 1 0 1 x x xPPPP P PPPPPPP x x x x x x x x x
N/A
58h 0 1 0 1 1 0 0 0 x x xPPPP P PPPPPPP x x x x x x x x x
N/A
59h 0 1 0 1 1 0 0 1 x x xPPPP P PPPPPPP x x x x x x x x x
N/A
60h 0 1 1 0 0 0 0 0 x x xPPPP P PPPPPPP x x x x x x x x x
N/A
61h 0 1 1 0 0 0 0 1 x x xPPPP P PPPPPPP x x x x x x x x x
N/A
77h 01110111 xxxxxxx x xxxxxxx x xxxxxxx x
N/A
7Ch 01111100xxxPPPx x xxxxxxxx xxxxxxx x
N/A
81h 1 0 0 0 0 0 0 1 x x xPPPP P PPPPPPP x x x x x x x x x
N/A
82h 1 0 0 0 0 0 1 0 x x xPPPP P PPPPPPPB BBBBBBB B
N/A
83h 1 0 0 0 0 0 1 1 x x xPPPP P PPPPPPP x x x x x x x x x
N/A
84h 10000100 xxxxxxx x xxxxxxxBBBBBBBBB
N/A
85h 1 0 0 0 0 1 0 1 x x xPPPP P PPPPPPPB BBBBBBB B
N/A
86h 1 0 0 0 0 1 1 0 x x xPPPP P PPPPPPP x x x x x x x x x
N/A
87h 10000111 xxxxxxx x xxxxxxxBBBBBBBBB
N/A
88h 1 0 0 0 1 0 0 0 x x xPPPP P PPPPPPP x x x x x x x x x
N/A
89h 1 0 0 0 1 0 0 1 x x xPPPP P PPPPPPP x x x x x x x x x
N/A
9Fh 1001111 1 N/A N/A N/A
N/A
B9h 1011100 1 N/A N/A N/A
N/A
ABh 1010101 1 N/A N/A N/A
N/A
D1h 11010001xxxxxxx x xxxxxxxBBBBBBBB B
N/A
D2h 11 0 1 0 0 1 0 x x xPPPPP PPPPPPP B BBBBBBB B
4
D3h 11010001xxxxxxx x xxxxxxxBBBBBBBB B
N/A
D4h 11010100xxxxxxx x xxxxxxxBBBBBBBB B
1
D6h 11010110xxxxxxx x xxxxxxxBBBBBBBB B
1
D7h 1101011 1 N/A N/A N/A
N/A
E8h 1 1 1 0 1 0 0 0 x x xPPPP P PPPPPPPB BBBBBBB B
4
32
3596E–DFLASH–02/07
AT45DB081D
16. Power-on/Reset State
When power is first applied to the device, or when recovering from a reset condition, the device
will default to Mode 3. In addition, the output pin (SO) will be in a high impedance state, and a
high-to-low transition on the CS
pin will be required to start a valid instruction. The mode (Mode
3 or Mode 0) will be automatically selected on every falling edge of CS
by sampling the inactive
clock state.
16.1 Initial Power-up/Reset Timing Restrictions
At power up, the device must not be selected until the supply voltage reaches the V
CC
(min.) and
further delay of t
VCSL
. During power-up, the internal Power-on Reset circuitry keeps the device in
reset mode until the V
CC
rises above the Power-on Reset threshold value (V
POR
). At this time, all
operations are disabled and the device does not respond to any commands. After power up is
applied and the V
CC
is at the minimum operating voltage V
CC
(min.), the t
VCSL
delay is required
before the device can be selected in order to perform a read operation.
Similarly, the t
PUW
delay is required after the V
CC
rises above the Power-on Reset threshold
value (V
POR
) before the device can perform a write (Program or Erase) operation. After initial
power-up, the device will default in Standby mode.
17. System Considerations
The RapidS serial interface is controlled by the clock SCK, serial input SI and chip select CS
pins. These signals must rise and fall monotonically and be free from noise. Excessive noise or
ringing on these pins can be misinterpreted as multiple edges and cause improper operation of
the device. The PC board traces must be kept to a minimum distance or appropriately termi-
nated to ensure proper operation. If necessary, decoupling capacitors can be added on these
pins to provide filtering against noise glitches.
As system complexity continues to increase, voltage regulation is becoming more important. A
key element of any voltage regulation scheme is its current sourcing capability. Like all Flash
memories, the peak current for DataFlash occur during the programming and erase operation.
The regulator needs to supply this peak current requirement. An under specified regulator can
cause current starvation. Besides increasing system noise, current starvation during program-
ming or erase can lead to improper operation and possible data corruption.
Symbol Parameter Min Typ Max Units
t
VCSL
V
CC
(min.) to Chip Select low 50 µs
t
PUW
Power-Up Device Delay before Write Allowed 20 ms
V
POR
Power-ON Reset Voltage 1.5 2.5 V
33
3596E–DFLASH–02/07
AT45DB081D
18. Electrical Specifications
Note: 1. After power is applied and V
CC
is at the minimum specified datasheet value, the system should wait 10 ms before an opera-
tional mode is started.
Notes: 1. I
CC1
during a buffer read is 20 mA maximum @ 20 MHz.
2. All inputs are 5 volts tolerant.
Table 18-1. Absolute Maximum Ratings*
Temperature under Bias ................................ -55°C to +125°C
*NOTICE: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages (including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V
CC
+ 0.6V
Table 18-2. DC and AC Operating Range
AT45DB081D (2.5V Version) AT45DB081D
Operating Temperature (Case) Ind. -40°C to 85°C-40°C to 85°C
V
CC
Power Supply 2.5V to 3.6V 2.7V to 3.6V
Table 18-3. DC Characteristics
Symbol Parameter Condition Min Typ Max Units
I
DP
Deep Power-down Current
CS
, RESET, WP = V
IH
, all
inputs at CMOS levels
510µA
I
SB
Standby Current
CS
, RESET, WP = V
IH
, all
inputs at CMOS levels
25 50 µA
I
CC1
(1)
Active Current, Read Operation
f = 20 MHz; I
OUT
= 0 mA;
V
CC
= 3.6V
710mA
f = 33 MHz; I
OUT
= 0 mA;
V
CC
= 3.6V
812mA
f = 50 MHz; I
OUT
= 0 mA;
V
CC
= 3.6V
10 14 mA
f = 66 MHz; I
OUT
= 0 mA;
V
CC
= 3.6V
11 15 mA
I
CC2
Active Current, Program/Erase
Operation
V
CC
= 3.6V 12 17 mA
I
LI
Input Load Current V
IN
= CMOS levels 1 µA
I
LO
Output Leakage Current V
I/O
= CMOS levels 1 µA
V
IL
Input Low Voltage V
CC
x 0.3 V
V
IH
Input High Voltage V
CC
x 0.7 V
V
OL
Output Low Voltage I
OL
= 1.6 mA; V
CC
= 2.7V 0.4 V
V
OH
Output High Voltage I
OH
= -100 µA V
CC
- 0.2V V
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