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AT25DF041A-SH

Part # AT25DF041A-SH
Description IC, FLASH,4MB, SOIC-8; Memory
Category IC
Availability In Stock
Qty 2
Qty Price
1 + $10.89845
Manufacturer Available Qty
Atmel
Date Code: 0815
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Features
Single 2.3V - 3.6V or 2.7V - 3.6V Supply
Serial Peripheral Interface (SPI) Compatible
Supports SPI Modes 0 and 3
70 MHz Maximum Clock Frequency
Flexible, Uniform Erase Architecture
4-Kbyte Blocks
32-Kbyte Blocks
64-Kbyte Blocks
Full Chip Erase
Individual Sector Protection with Global Protect/Unprotect Feature
One 16-Kbyte Top Sector
Two 8-Kbyte Sectors
One 32-Kbyte Sector
Seven 64-Kbyte Sectors
Hardware Controlled Locking of Protected Sectors via WP pin
Flexible Programming Options
Byte/Page Program (1 to 256 Bytes)
Sequential Program Mode Capability
Fast Program and Erase Times
1.2 ms Typical Page Program (256 Bytes) Time
50 ms Typical 4-Kbyte Block Erase Time
250 ms Typical 32-Kbyte Block Erase Time
400 ms Typical 64-Kbyte Block Erase Time
Automatic Checking and Reporting of Erase/Program Failures
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
5 mA Active Read Current (Typical)
15 µA Deep Power-down Current (Typical)
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Complies with Full Industrial Temperature Range
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
8-lead SOIC (150-mil and 208-mil Wide)
8-pad Ultra Thin DFN (5 x 6 x 0.6 mm)
1. Description
The AT25DF041A is a serial interface Flash memory device designed for use in a
wide variety of high-volume consumer-based applications in which program code is
shadowed from Flash memory into embedded or external RAM for execution. The
flexible erase architecture of the AT25DF041A, with its erase granularity as small as
4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional
data storage EEPROM devices.
4-megabit
2.3-volt or
2.7-volt
Minimum
SPI Serial Flash
Memory
AT25DF041A
3668D–DFLASH–9/08
2
3668D–DFLASH–9/08
AT25DF041A
The physical sectoring and the erase block sizes of the AT25DF041A have been optimized to
meet the needs of today’s code and data storage applications. By optimizing the size of the
physical sectors and erase blocks, the memory space can be used much more efficiently.
Because certain code modules and data storage segments must reside by themselves in their
own protected sectors, the wasted and unused memory space that occurs with large sectored
and large block erase Flash memory devices can be greatly reduced. This increased memory
space efficiency allows additional code routines and data storage segments to be added while
still maintaining the same overall device density.
The AT25DF041A also offers a sophisticated method for protecting individual sectors against
erroneous or malicious program and erase operations. By providing the ability to individually pro-
tect and unprotect sectors, a system can unprotect a specific sector to modify its contents while
keeping the remaining sectors of the memory array securely protected. This is useful in applica-
tions where program code is patched or updated on a subroutine or module basis, or in
applications where data storage segments need to be modified without running the risk of errant
modifications to the program code segments. In addition to individual sector protection capabili-
ties, the AT25DF041A incorporates Global Protect and Global Unprotect features that allow the
entire memory array to be either protected or unprotected all at once. This reduces overhead
during the manufacturing process since sectors do not have to be unprotected one-by-one prior
to initial programming.
Specifically designed for use in 2.5-volt or 3-volt systems, the AT25DF041A supports read, pro-
gram, and erase operations with a supply voltage range of 2.3V to 3.6V or 2.7V to 3.6V. No
separate voltage is required for programming and erasing.
3
3668D–DFLASH–9/08
AT25DF041A
2. Pin Descriptions and Pinouts
Table 2-1. Pin Descriptions
Symbol Name and Function
Asserted
State Type
CS
CHIP SELECT: Asserting the CS pin selects the device. When the CS pin is deasserted, the
device will be deselected and normally be placed in standby mode (not Deep Power-down mode),
and the SO pin will be in a high-impedance state. When the device is deselected, data will not be
accepted on the SI pin.
A high-to-low transition on the CS
pin is required to start an operation, and a low-to-high transition
is required to end an operation. When ending an internally self-timed operation such as a program
or erase cycle, the device will not enter the standby mode until the completion of the operation.
Low Input
SCK
SERIAL CLOCK: This pin is used to provide a clock to the device and is used to control the flow of
data to and from the device. Command, address, and input data present on the SI pin is always
latched on the rising edge of SCK, while output data on the SO pin is always clocked out on the
falling edge of SCK.
Input
SI
SERIAL INPUT: The SI pin is used to shift data into the device. The SI pin is used for all data input
including command and address sequences. Data on the SI pin is always latched on the rising
edge of SCK.
Input
SO
SERIAL OUTPUT: The SO pin is used to shift data out from the device. Data on the SO pin is
always clocked out on the falling edge of SCK.
Output
WP
WRITE PROTECT: The WP pin controls the hardware locking feature of the device. Please refer to
section “Protection Commands and Features” on page 15 for more details on protection features
and the WP pin.
The WP
pin is internally pulled-high and may be left floating if hardware-controlled protection will
not be used. However, it is recommended that the WP pin also be externally connected to V
CC
whenever possible.
Low Input
HOLD
HOLD: The HOLD pin is used to temporarily pause serial communication without deselecting or
resetting the device. While the HOLD pin is asserted, transitions on the SCK pin and data on the
SI pin will be ignored, and the SO pin will be in a high-impedance state.
The CS
pin must be asserted, and the SCK pin must be in the low state in order for a Hold
condition to start. A Hold condition pauses serial communication only and does not have an effect
on internally self-timed operations such as a program or erase cycle. Please refer to section “Hold”
on page 30 for additional details on the Hold operation.
The HOLD
pin is internally pulled-high and may be left floating if the Hold function will not be used.
However, it is recommended that the HOLD
pin also be externally connected to V
CC
whenever
possible.
Low Input
V
CC
DEVICE POWER SUPPLY: The V
CC
pin is used to supply the source voltage to the device.
Operations at invalid V
CC
voltages may produce spurious results and should not be attempted.
Power
GND
GROUND: The ground reference for the power supply. GND should be connected to the
system ground.
Power
Figure 2-1. 8-SOIC Top View Figure 2-2. 8-UDFN Top View
1
2
3
4
8
7
6
5
CS
SO
WP
GND
VCC
HOLD
SCK
SI
CS
SO
WP
GND
VCC
HOLD
SCK
SI
8
7
6
5
1
2
3
4
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