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A3P250-FGG144

Part # A3P250-FGG144
Description IC FPGA 97 I/O 144FBGA
Category IC
Availability Out of Stock
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1 + $15.25371



Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

ProASIC3 DC and Switching Characteristics
2-14 v1.3
Guidelines
Toggle Rate Definition
A toggle rate defines the frequency of a net or logic element relative to a clock. It is a percentage.
If the toggle rate of a net is 100%, this means that this net switches at half the clock frequency.
Below are some examples:
The average toggle rate of a shift register is 100% because all flip-flop outputs toggle at
half of the clock frequency.
The average toggle rate of an 8-bit counter is 25%:
Bit 0 (LSB) = 100%
Bit 1 = 50%
Bit 2 = 25%
–…
Bit 7 (MSB) = 0.78125%
Average toggle rate = (100% + 50% + 25% + 12.5% + . . . + 0.78125%) / 8
Enable Rate Definition
Output enable rate is the average percentage of time during which tristate outputs are enabled.
When nontristate output buffers are used, the enable rate should be 100%.
Table 2-16 • Toggle Rate Guidelines Recommended for Power Calculation
Component Definition Guideline
α
1
Toggle rate of VersaTile outputs 10%
α
2
I/O buffer toggle rate 10%
Table 2-17 • Enable Rate Guidelines Recommended for Power Calculation
Component Definition Guideline
β
1
I/O output buffer enable rate 100%
β
2
RAM enable rate for read operations 12.5%
β
3
RAM enable rate for write operations 12.5%
ProASIC3 DC and Switching Characteristics
v1.3 2-15
User I/O Characteristics
Timing Model
Figure 2-2 • Timing Model
Operating Conditions: –2 Speed, Commercial Temperature Range (T
J
= 70°C), Worst Case
V
CC
=1.425V
DQ
Y
Y
DQ
DQ
DQ
Y
Combinational Cell
Combinational Cell
Combinational Cell
I/O Module
(Registered)
I/O Module
(Non-Registered)
Register Cell
Register Cell
I/O Module
(Registered)
I/O Module
(Non-Registered)
LVPECL (Applicable to
Advanced I/O Banks Only)L
LVPECL
(Applicable
to Advanced
I/O Banks only)
LVDS,
BLVDS,
M-LVDS
(Applicable for
Advanced I/O
Banks only)
LVTTL 3.3 V Output drive
strength = 12 mA High slew rate
Y
Combinational Cell
Y
Combinational Cell
Y
Combinational Cell
I/O Module
(Non-Registered)
LVTTL
Output drive strength = 8 mA
High slew rate
I/O Module
(Non-Registered)
LVCMOS 1.5 V
Output drive strength = 4 mA
High slew rate
LVTTL
Output drive strength = 12 mA
High slew rate
I/O Module
(Non-Registered)
Input LVTTL
Clock
Input LVTTL
Clock
Input LVTTL
Clock
t
PD
= 0.56 ns
t
PD
= 0.49 ns
t
DP
= 1.34 ns
t
PD
= 0.87 ns
t
DP
= 2.64 ns (Advanced I/O Banks)
t
PD
= 0.47 ns
t
DP
= 3.66 ns (Advanced I/O Banks)
t
PD
= 0.47 ns
t
DP
= 3.97 ns (Advanced I/O Banks)
t
PD
= 0.47 ns
t
PY
= 0.76 ns
(Advanced I/O Banks)
t
CLKQ
= 0.55 ns
t
OCLKQ
= 0.59 ns
t
SUD
= 0.43 ns
t
OSUD
= 0.31 ns
t
DP
= 2.64 ns
(Advanced I/O Banks)
t
PY
= 0.76 ns (Advanced I/O Banks)
t
PY
= 1.20 ns
t
CLKQ
= 0.55 ns
t
SUD
= 0.43 ns
t
PY
= 0.76 ns
(Advanced I/O Banks)
t
ICLKQ
= 0.24 ns
t
ISUD
= 0.26 ns
t
PY
= 1.05 ns
ProASIC3 DC and Switching Characteristics
2-16 v1.3
Figure 2-3 • Input Buffer Timing Model and Delays (example)
t
PY
(R)
PAD
Y
V
trip
GND
t
PY
(F)
V
trip
50%
50%
V
IH
V
CC
V
IL
t
DOUT
(R)
DIN
GND
t
DOUT
(F)
50%50%
V
CC
PAD
Y
t
PY
D
CLK
Q
I/O Interface
DIN
t
DIN
To Array
t
PY
= MAX(t
PY
(R), t
PY
(F))
t
DIN
= MAX(t
DIN
(R), t
DIN
(F))
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