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ADS820
2
SBAS037B
SPECIFIED
PACKAGE TEMPERATURE PACKAGE ORDERING TRANSPORT
PRODUCT PACKAGE-LEAD DESIGNATOR RANGE MARKING NUMBER MEDIA, QUANTITY
ADS820 SO-8 DW –40°C to +85°C ADS820U ADS820U Rails, 28
"" " ""ADS820U/1K Tape and Reel, 1000
ADS820U
PARAMETER CONDITIONS TEMP MIN TYP MAX UNITS
ELECTRICAL CHARACTERISTICS
At T
A
= +25°C, V
S
= +5V, Sampling Rate = 20MHz, with a 50% duty cycle clock having a 2ns rise/fall time, unless otherwise noted.
Resolution 10 Bits
Specified Temperature Range T
AMBIENT
–40 +85 °C
ANALOG INPUT
Differential Full-Scale Input Range +1.25 +3.25 V
Common-Mode Voltage 2.25 V
Analog Input Bandwidth (–3dB)
Small Signal –20dBFS
(1)
Input +25°C 400 MHz
Full Power 0dB Input +25°C 65 MHz
Input Impedance 1.25 || 4 MΩ || pF
DIGITAL INPUT
Logic Family TTL/HCT Compatible CMOS
Convert Command Start Conversion Falling Edge
ACCURACY
(2)
f
S
= 2.5MHz
Gain Error +25°C ±0.6 ±1.5 %
Full ±1.0 ±2.5 %
Gain Tempco ±85 ppm/°C
Power-Supply Rejection of Gain ∆ +V
S
= ±5% +25°C 0.01 0.1 %FSR/%
Input Offset Error Full ±2.1 ±3.0 %
Power-Supply Rejection of Offset ∆ +V
S
= ±5% +25°C 0.02 0.1 %FSR/%
CONVERSION CHARACTERISTICS
Sample Rate 10k 20M Sample/s
Data Latency 6.5
Convert Cycle
DYNAMIC CHARACTERISTICS
Differential Linearity Error
f = 500kHz +25°C ±0.15 ±1.0 LSB
Full ±0.15 ±1.0 LSB
f = 10MHz +25°C ±0.2 ±1.0 LSB
Full ±0.2 ±1.0 LSB
No Missing Codes Full Tested
Integral Linearity Error at f = 500kHz Full ±0.5 ±2.0 LSB
Spurious-Free Dynamic Range (SFDR)
f = 500kHz (–1dBFS input) +25°C 67 77 dBFS
Full 64 74 dBFS
f = 10MHz (–1dBFS input) +25°C 59 63 dBFS
Full 57 62 dBFS
ABSOLUTE MAXIMUM RATINGS
(1)
+V
S
....................................................................................................... +6V
Analog Input ............................................................ 0V to (+V
S
+ 300mV)
Logic Input ............................................................... 0V to (+V
S
+ 300mV)
Case Temperature ......................................................................... +100°C
Junction Temperature .................................................................... +150°C
Storage Temperature .................................................................... +125°C
External Top Reference Voltage (REFT) ................................. +3.4V Max
External Bottom Reference Voltage (REFB) ............................ +1.1V Min
NOTES: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability.
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instru-
ments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
PACKAGE/ORDERING INFORMATION
(1)
NOTE: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at
www.ti.com.
NOTE: (1) dBFS refers to dB below Full Scale. (2) Percentage accuracies are referred to the internal A/D Converter Full-Scale Range of 4Vp-p. (3) IMD is
referred to the larger of the two input signals. If referred to the peak envelope signal (≈ 0dB), the intermodulation products will be 7dB lower. (4) Based on
(SINAD – 1.76)/6.02. (5) No “rollover” of bits.
