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ADM208EARS

Part # ADM208EARS
Description LINE TRANSMITTER/RCVR 4TR 4TX4RX 24SSOP - Rail/Tube
Category IC
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Analog Devices
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
REV. B
–10–
new generation modem standards which requires data rates of
200 kb/s. The slew rate is internally controlled to less than 30 V/µs
in order to minimize EMI interference.
t
DR
3V
0V
EN INPUT
VOH
VOL
RECEIVER
OUTPUT
VOH –0.1V
VOL +0.1V
NOTE:
EN IS THE COMPLEMENT OF EN FOR THE ADM213E
Figure 22. Receiver-Disable Timing
t
ER
3V
0V
EN INPUT
RECEIVER
OUTPUT
+3.5V
+0.8V
NOTE:
EN IS THE COMPLEMENT OF EN FOR THE ADM213E
Figure 23. Receiver Enable Timing
ESD/EFT Transient Protection Scheme
The ADM2xxE uses protective clamping structures on all inputs
and outputs which clamps the voltage to a safe level and dissi-
pates the energy present in ESD (Electrostatic) and EFT (Elec-
trical Fast Transients) discharges. A simplified schematic of the
protection structure is shown in Figures 24a and 24b. Each
input and output contains two back-to-back high speed clamp-
ing diodes. During normal operation with maximum RS-232
signal levels, the diodes have no affect as one or the other is
reverse biased depending on the polarity of the signal. If how-
ever the voltage exceeds about ±50 V, reverse breakdown occurs
and the voltage is clamped at this level. The diodes are large p-n
junctions which are designed to handle the instantaneous cur-
rent surge which can exceed several amperes.
The transmitter outputs and receiver inputs have a similar pro-
tection structure. The receiver inputs can also dissipate some of
the energy through the internal 5 k resistor to GND as well as
through the protection diodes.
The protection structure achieves ESD protection up to
±15 kV and EFT protection up to ±2 kV on all RS-232 I-O
lines. The methods used to test the protection scheme are dis-
cussed later.
R
IN
RX
D1
D2
RECEIVER
INPUT
R1
Figure 24a. Receiver Input Protection Scheme
RX
D1
D2
TRANSMITTER
OUTPUT
T
OUT
Figure 24b. Transmitter Output Protection Scheme
ESD TESTING (IEC1000-4-2)
IEC1000-4-2 (previously 801-2) specifies compliance testing
using two coupling methods, contact discharge and air-gap
discharge. Contact discharge calls for a direct connection to the
unit being tested. Air-gap discharge uses a higher test voltage
but does not make direct contact with the unit under test. With
air discharge, the discharge gun is moved towards the unit un-
der test developing an arc across the air gap, hence the term air-
discharge. This method is influenced by humidity, temperature,
barometric pressure, distance and rate of closure of the discharge
gun. The contact-discharge method while less realistic is more
repeatable and is gaining acceptance in preference to the air-gap
method.
Although very little energy is contained within an ESD pulse,
the extremely fast rise time coupled with high voltages can cause
failures in unprotected semiconductors. Catastrophic destruc-
tion can occur immediately as a result of arcing or heating. Even
if catastrophic failure does not occur immediately, the device
may suffer from parametric degradation which may result in
degraded performance. The cumulative effects of continuous
exposure can eventually lead to complete failure.
I-O lines are particularly vulnerable to ESD damage. Simply
touching or plugging in an I-O cable can result in a static dis-
charge that can damage or completely destroy the interface
product connected to the I-O port. Traditional ESD test meth-
ods such as the MIL-STD-883B method 3015.7 do not fully
test a products susceptibility to this type of discharge. This test
was intended to test a products susceptibility to ESD damage
during handling. Each pin is tested with respect to all other
pins. There are some important differences between the tradi-
tional test and the IEC test:
(a) The IEC test is much more stringent in terms of discharge
( energy. The peak current injected is over four times greater.
(b) The current rise time is significantly faster in the IEC test.
(c) The IEC test is carried out while power is applied to the device.
It is possible that the ESD discharge could induce latch-up in the
device under test. This test therefore is more representative of a
real-world I-O discharge where the equipment is operating nor-
mally with power applied. For maximum peace of mind however,
both tests should be performed, therefore, ensuring maximum
protection both during handling and later during field service.
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
REV. B
–11–
R1 R2
C1
DEVICE
UNDER TEST
HIGH
VOLTAGE
GENERATOR
ESD TEST METHOD R2 C1
H. BODY MIL-STD883B 1.5kV 100pF
IEC1000-4-2 330V 150pF
Figure 25. ESD Test Standards
100
I
PEAK
– %
90
36.8
10
t
DL
t
RL
TIME t
Figure 26. Human Body Model ESD Current Waveform
100
I
PEAK
– %
90
10
TIME t
30ns
60ns
0.1 TO 1ns
Figure 27. IEC1000-4-2 ESD Current Waveform
The ADM2xxE family of products are tested using both the
above mentioned test methods. All pins are tested with respect
to all other pins as per the MIL-STD-883B specification. In
addition all I-O pins are tested as per the IEC test specification.
The products were tested under the following conditions:
(a) Power-On—Normal Operation
(b) Power-On—Shutdown Mode
(c) Power-Off
There are four levels of compliance defined by IEC1000-4-2.
The ADM2xxE family of products meet the most stringent
compliance level for both contact and for air-gap discharge. This
means that the products are able to withstand contact discharges in
excess of 8 kV and air-gap discharges in excess of 15 kV.
Table IV. IEC1000-4-2 Compliance Levels
Contact Discharge Air Discharge
Level kV kV
12 2
24 4
36 8
48 15
Table V. ADM2xxE ESD Test Results
ESD Test Method I-O Pins Other Pins
MIL-STD-883B ±15 kV ±2.5 kV
IEC1000-4-2
Contact ±8 kV
Air ±15 kV
FAST TRANSIENT BURST TESTING (IEC1000-4-4)
IEC1000-4-4 (previously 801-4) covers electrical fast-transient/
burst (EFT) immunity. Electrical fast transients occur as a
result of arcing contacts in switches and relays. The tests simu-
late the interference generated when for example a power relay
disconnects an inductive load. A spark is generated due to the
well known back EMF effect. In fact the spark consists of a
burst of sparks as the relay contacts separate. The voltage appear-
ing on the line, therefore, consists of a bust of extremely fast tran-
sient impulses. A similar effect occurs when switching on
fluorescent lights.
The fast transient burst test defined in IEC1000-4-4 simulates
this arcing and its waveform is illustrated in Figure 28. It con-
sists of a burst of 2.5 kHz to 5 kHz transients repeating at
300 ms intervals. It is specified for both power and data lines.
300ms 15ms
t
V
5ns
0.2/0.4ms
50ns
V
t
Figure 28. IEC1000-4-4 Fast Transient Waveform
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
REV. B
–12–
Testing for immunity involves irradiating the device with an EM
field. There are various methods of achieving this including use
of anechoic chamber, stripline cell, TEM cell, GTEM cell. A
stripline cell consists of two parallel plates with an electric field
developed between them. The device under test is placed within
the cell and exposed to the electric field. There are three severity
levels having field strengths ranging from 1 V to 10 V/m. Results
are classified in a similar fashion to those for IEC1000-4-4.
1. Normal operation.
2. Temporary degradation or loss of function which is self-
recoverable when the interfering signal is removed.
3. Temporary degradation or loss of function which requires
operator intervention or system reset when the interfering
signal is removed.
4. Degradation or loss of function which is not recoverable due
to damage.
The ADM2xxE family of products easily meets Classification 1
at the most stringent (Level 3) requirement. In fact field strengths
up to 30 V/m showed no performance degradation and error-free
data transmission continued even during irradiation.
Table VII. Test Severity Levels (IEC1000-4-3)
Field Strength
Level V/m
11
23
310
EMISSIONS/INTERFERENCE
EN55 022, CISPR22 defines the permitted limits of radiated
and conducted interference from Information Technology (IT)
equipment. The objective of the standard is to minimize the
level of emissions both conducted and radiated.
For ease of measurement and analysis, conducted emissions are
assumed to predominate below 30 MHz and radiated emissions
are assumed to predominate above 30 MHz.
CONDUCTED EMISSIONS
This is a measure of noise which gets conducted onto the line
power supply. Switching transients from the charge pump which
are 20 V in magnitude and containing significant energy can
lead to conducted emissions. Other sources of conducted emis-
sions can be due to overlap in switch on-times in the charge
pump voltage converter. In the voltage doubler shown below, if
S2 has not fully turned off before S4 turns on, this results in a
transient current glitch between V
CC
and GND which results in
conducted emissions. It is therefore important that the switches
in the charge pump guarantee break-before-make switching
under all conditions so that instantaneous short circuit condi-
tions do not occur.
The ADM2xxE has been designed to minimize the switching
transients and ensure break-before-make switching thereby
minimizing conducted emissions. This has resulted in the level
of emissions being well below the limits required by the specifi-
cation. No additional filtering/decoupling other than the recom-
mended 0.1 µF capacitor is required.
Table VI.
V Peak (kV) V Peak (kV)
Level PSU I-O
1 0.5 0.25
2 1 0.5
321
442
A simplified circuit diagram of the actual EFT generator is
illustrated in Figure 29.
The transients are coupled onto the signal lines using an EFT
coupling clamp. The clamp is 1 m long and it completely sur-
rounds the cable providing maximum coupling capacitance
(50 pF to 200 pF typ) between the clamp and the cable. High
energy transients are capacitively coupled onto the signal lines.
Fast rise times (5 ns) as specified by the standard result in very
effective coupling. This test is very severe since high voltages are
coupled onto the signal lines. The repetitive transients can often
cause problems where single pulses don’t. Destructive latch-up
may be induced due to the high energy content of the transients.
Note that this stress is applied while the interface products are
powered up and are transmitting data. The EFT test applies
hundreds of pulses with higher energy than ESD. Worst case
transient current on an I-O line can be as high as 40A.
Test results are classified according to the following:
1. Normal performance within specification limits.
2. Temporary degradation or loss of performance which is self-
recoverable.
3. Temporary degradation or loss of function or performance
which requires operator intervention or system reset.
4. Degradation or loss of function which is not recoverable due
to damage.
The ADM2xxE have been tested under worst case conditions
using unshielded cables and meet Classification 2. Data trans-
mission during the transient condition is corrupted but it may
be resumed immediately following the EFT event without user
intervention.
R
C
R
M
C
C
HIGH
VOLTAGE
SOURCE
L
Z
S
C
D
50V
OUTPUT
Figure 29. IEC1000-4-4 Fast Transient Generator
IEC1000-4-3 RADIATED IMMUNITY
IEC1000-4-3 (previously IEC801-3) describes the measurement
method and defines the levels of immunity to radiated electro-
magnetic fields. It was originally intended to simulate the elec-
tromagnetic fields generated by portable radio transceivers or
any other device which generates continuous wave radiated
electromagnetic energy. Its scope has since been broadened to
include spurious EM energy which can be radiated from fluores-
cent lights, thyristor drives, inductive loads, etc.
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