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ADG779BKS

Part # ADG779BKS
Description
Category IC
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
a
ADG779
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 2001
CMOS 1.8 V to 5.5 V, 2.5
SPDT Switch/2:1 Mux In Tiny SC70 Package
FUNCTIONAL BLOCK DIAGRAM
IN
ADG779
S2
S1
D
SWITCHES SHOWN FOR
A LOGIC "1" INPUT
FEATURES
1.8 V to 5.5 V Single Supply
2.5 On Resistance
0.75 On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
6-Lead SC70 Package
Fast Switching Times
t
ON
20 ns
t
OFF
6 ns
Typical Power Consumption (<0.01 W)
TTL/CMOS-Compatible
APPLICATIONS
Battery-Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
GENERAL DESCRIPTION
The ADG779 is a monolithic CMOS SPDT (single-pole,
double-throw) switch. This switch is designed on a submi-
cron process that provides low power dissipation yet gives
high switching speed, low on resistance and low leakage
currents.
The ADG779 operates from a single supply range of 1.8 V
to 5.5 V, making it ideal for use in battery-powered instru-
ments and with the new generation of DACs and ADCs from
Analog Devices.
Each switch of the ADG779 conducts equally well in both
directions when on. The ADG779 exhibits break-before-make
switching action.
Because of the advanced submicron process, –3 dB bandwidth
of greater than 200 MHz can be achieved.
The ADG779 is available in a 6-lead SC70 package.
PRODUCT HIGHLIGHTS
1. Tiny 6-Lead SC70 Package.
2. 1.8 V to 5.5 V Single Supply Operation. The ADG779
offers high performance, including low on resistance and
fast switching times, and is fully specified and guaranteed
with 3 V and 5 V supply rails.
3. Very Low R
ON
(5 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V
operation, R
ON
is typically 40 Ω over the temperature range.
4. On-Resistance Flatness (R
FLAT(ON)
) (0.75 Ω typ).
5. –3 dB Bandwidth >200 MHz.
6. Low Power Dissipation. CMOS construction ensures low
power dissipation.
7. 14 ns Switching Times.
–2–
REV. 0
ADG779–SPECIFICATIONS
1
B Version
–40C to
Parameter 25C +85C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
)2 .5 Ω typ V
S
= 0 V to V
DD
, I
S
= –10 mA,
56 Ω max Test Circuit 1
On Resistance Match Between
Channels (∆R
ON
) 0.1 Ω typ V
S
= 0 V to V
DD
, I
S
= –10 mA
0.8 Ω max
On-Resistance Flatness (R
FLAT(ON)
) 0.75 Ω typ V
S
= 0 V to V
DD
, I
S
= –10 mA
1.2 Ω max
LEAKAGE CURRENTS
2
V
DD
= 5.5 V
Source OFF Leakage I
S
(OFF) ± 0.01 ± 0.05 nA typ V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V,
Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON) ± 0.01 ± 0.05 nA typ V
S
= V
D
= 1 V, or V
S
= V
D
= 4.5 V,
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ V
IN
= V
INL
or V
INH
± 0.1 µA max
DYNAMIC CHARACTERISTICS
2
t
ON
14 ns typ R
L
= 300 Ω, C
L
= 35 pF
20 ns max V
S
= 3 V, Test Circuit 4
t
OFF
3 ns typ R
L
= 300 Ω, C
L
= 35 pF
6 ns max V
S
= 3 V, Test Circuit 4
Break-Before-Make Time Delay, t
D
8 ns typ R
L
= 300 Ω, C
L
= 35 pF,
1 ns min V
S1
= V
S2
= 3 V, Test Circuit 5
Off Isolation –67 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
–87 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz,
Test Circuit 6
Channel-to-Channel Crosstalk –62 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
–82 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz,
Test Circuit 7
Bandwidth –3 dB 200 MHz typ R
L
= 50 Ω, C
L
= 5 pF, Test Circuit 8
C
S
(OFF) 7 pF typ f = 1 MHz
C
D
, C
S
(ON) 27 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= 5.5 V
Digital Inputs = 0 V or 5 V
I
DD
0.001 µA typ
1.0 µA max
NOTES
1
Temperature ranges are as follows: B Version, –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(V
DD
= 5 V 10%, GND = 0 V)
–3–REV. 0
ADG779
B Version
–40C to
Parameter 25C +85C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
)67Ω typ V
S
= 0 V to V
DD
, I
S
= –10 mA,
10 Ω max Test Circuit 1
On Resistance Match Between
Channels (∆R
ON
) 0.1 Ω typ V
S
= 0 V to V
DD
, I
S
= –10 mA
0.8 Ω max
On-Resistance Flatness (R
FLAT(ON)
) 2.5 Ω typ V
S
= 0 V to V
DD
, I
S
= –10 mA
LEAKAGE CURRENTS
2
V
DD
= 3.3 V
Source OFF Leakage I
S
(OFF) ± 0.01 ± 0.05 nA typ V
S
= 3 V/1 V, V
D
= 1 V/3 V,
Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON) ± 0.01 ± 0.05 nA typ V
S
= V
D
= 1 V, or V
S
= V
D
= 3 V,
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ V
IN
= V
INL
or V
INH
± 0.1 µA max
DYNAMIC CHARACTERISTICS
2
t
ON
16 ns typ R
L
= 300 Ω, C
L
= 35 pF
24 ns max V
S
= 2 V, Test Circuit 4
t
OFF
4 ns typ R
L
= 300 Ω, C
L
= 35 pF
7 ns max V
S
= 2 V, Test Circuit 4
Break-Before-Make Time Delay, t
D
8 ns typ R
L
= 300 Ω, C
L
= 35 pF
1 ns min V
S1
= V
S2
= 2 V, Test Circuit 5
Off Isolation –67 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
–87 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz,
Test Circuit 6
Channel-to-Channel Crosstalk –62 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
–82 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz,
Test Circuit 7
Bandwidth –3 dB 200 MHz typ R
L
= 50 Ω, C
L
= 5 pF, Test Circuit 8
C
S
(OFF) 7 pF typ f = 1 MHz
C
D
, C
S
(ON) 27 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= 3.3 V
Digital Inputs = 0 V or 3 V
I
DD
0.001 µA typ
1.0 µA max
NOTES
1
Temperature ranges are as follows: B Version, –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(V
DD
= 3 V 10%, GND = 0 V)
SPECIFICATIONS
1
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