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ADG438FBR

Part # ADG438FBR
Description ANLG MUX SGL 8:1 25V/25V 16SOIC N - Rail/Tube
Category IC
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

REV. D
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
a
ADG438F/ADG439F*
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 2000
High Performance 4/8 Channel
Fault-Protected Analog Multiplexers
FUNCTIONAL BLOCK DIAGRAMS
S1
S8
A0
D
A1 A2 EN
ADG438F
1 OF 8
DECODER
A0
ADG439F
A1 EN
S1A
DA
S4A
S1B
S4B
DB
1 OF 4
DECODER
FEATURES
Fast Switching Times
t
ON
250 ns max
t
OFF
150 ns max
Fault and Overvoltage Protection (–40 V, +55 V)
All Switches OFF with Power Supply OFF
Analog Output of ON Channel Clamped Within Power
Supplies If an Overvoltage Occurs
Latch-Up Proof Construction
Break Before Make Construction
TTL and CMOS Compatible Inputs
APPLICATIONS
Data Acquisition Systems
Industrial and Process Control Systems
Avionics Test Equipment
Signal Routing Between Systems
High Reliability Control Systems
GENERAL DESCRIPTION
The ADG438F/ADG439F are CMOS analog multiplexers, the
ADG438F comprising 8 single channels and the ADG439F
comprising four differential channels. These multiplexers pro-
vide fault protection. Using a series n-channel, p-channel, n-
channel MOSFET structure, both device and signal source
protection is provided in the event of an overvoltage or power
loss. The multiplexer can withstand continuous overvoltage
inputs from –40 V to +55 V. During fault conditions, the multi-
plexer input (or output) appears as an open circuit and only a
few nanoamperes of leakage current will flow. This protects not
only the multiplexer and the circuitry driven by the multiplexer,
but also protects the sensors or signal sources which drive the
multiplexer.
The ADG438F switches one of eight inputs to a common out-
put as determined by the 3-bit binary address lines A0, A1 and
A2. The ADG439F switches one of four differential inputs to a
common differential output as determined by the 2-bit binary
address lines A0 and A1. An EN input on each device is used to
enable or disable the device. When disabled, all channels are
switched OFF.
PRODUCT HIGHLIGHTS
1. Fault Protection.
The ADG438F/ADG439F can withstand continuous volt-
age inputs up to –40 V or +55 V. When a fault occurs due
to the power supplies being turned off, all the channels
are turned off and only a leakage current of a few nano-
amperes flows.
2. ON channel turns OFF while fault exists.
3. Low R
ON.
4. Fast Switching Times.
5. Break-Before-Make Switching.
Switches are guaranteed break-before-make so that input
signals are protected against momentary shorting.
6. Trench Isolation Eliminates Latch-up.
A dielectric trench separates the p- and n-channel MOSFETs
thereby preventing latch-up.
7. Improved OFF Isolation.
Trench isolation enhances the channel-to-channel isolation
of the ADG438F/ADG439F.
*Patent Pending.
–2 REV. D
ADG438F/ADG439F–SPECIFICATIONS
1
Dual Supply
B Version
–40C to –40C to
Parameter +25C +85C +105C Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
SS
+ 1.2 V
SS
+ 1.2 V min
V
DD
– 0.8 V
DD
– 0.8 V max
R
ON
400 400 max –10 V < V
S
< +10 V, I
S
= 1 mA;
R
ON
5 5 % max –5 V < V
S
< +5 V, I
S
= 1 mA;
R
ON
Drift 0.6 %/°C typ V
S
= 0 V, I
S
= 1 mA
R
ON
Match 3 3 3 % max V
S
= ± 10 V, I
S
= 1 mA
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF) ±0.01 nA typ V
D
= ±10 V, V
S
= ⫿10 V;
±0.5 ±2 ±5 nA max Test Circuit 2
Drain OFF Leakage I
D
(OFF) ±0.01 nA typ V
D
= ±10 V, V
S
= ⫿10 V;
ADG438F ±0.5 ±5 ±30 nA max Test Circuit 3
ADG439F ±0.5 ±5 ±15 nA max
Channel ON Leakage I
D
, I
S
(ON) ±0.01 nA typ V
S
= V
D
= ±10 V;
ADG438F ±0.5 ±5 ±30 nA max Test Circuit 4
ADG439F ±0.5 ±5 ±15 nA max
FAULT
Output Leakage Current ±0.02 nA typ V
S
= –33 V, +33 V or +50 V, V
D
= 0 V, Test Circuit 3
(With Overvoltage) ±0.1 ±2 ±10 µA max
Input Leakage Current ±0.005 µA typ V
S
= ±25 V, V
D
= ⫿10 V, Test Circuit 5
(With Overvoltage) ±0.1 ±1 ±2 µA max
Input Leakage Current ±0.001 µA typ V
S
= ±25 V, V
D
= V
EN
= A0, A1, A2 = 0 V
(With Power Supplies OFF) ± 0.1 ± 1 ± 4 µA max Test Circuit 6
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 2.4 V min
Input Low Voltage, V
INL
0.8 0.8 V max
Input Current
I
INL
or I
INH
±1 ±1 µA max V
IN
= 0 or V
DD
C
IN
, Digital Input Capacitance 5 pF typ
DYNAMIC CHARACTERISTICS
2
t
TRANSITION
170 ns typ R
L
= 1 M, C
L
= 35 pF;
220 300 320 ns max V
S1
= ±10 V, V
S8
= ⫿10 V; Test Circuit 7
t
OPEN
10 10 10 ns min R
L
= 1 k, C
L
= 35 pF;
V
S
= +5 V; Test Circuit 8
t
ON
(EN) 200 ns typ R
L
= 1 k, C
L
= 35 pF;
250 300 300 ns max V
S
= +5 V; Test Circuit 9
t
OFF
(EN) 110 ns typ R
L
= 1 k, C
L
= 35 pF;
150 180 180 ns max V
S
= +5 V; Test Circuit 9
t
SETT
, Settling Time
0.1% 0.5 0.5 µs typ R
L
= 1 k, C
L
= 35 pF;
0.01% 1.7 1.7 µs typ V
S
= +5 V
Charge Injection 4 pC typ V
S
=0V,R
S
=0,C
L
= 1 nF; Test Circuit 10
OFF Isolation 80 dB typ R
L
= 1 k, C
L
= 15 pF, f = 100 kHz;
V
S
= 7 V rms; Test Circuit 11
Channel-to-Channel Crosstalk 85 dB typ R
L
= 1 k, C
L
= 15 pF, f = 100 kHz;
V
S
= 7 V rms; Test Circuit 12
C
S
(OFF) 5 pF typ
C
D
(OFF)
ADG438F 50 pF typ
ADG439F 25 pF typ
POWER REQUIREMENTS
I
DD
0.05 mA typ V
IN
= 0 V or 5 V
0.15 0.25 0.25 mA max
I
SS
0.01 mA typ
0.02 0.04 0.04 mA max
NOTES
1
Temperature range is as follows: B Version: –40°C to +105°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(V
DD
= +15 V, V
SS
= –15 V, GND = 0 V, unless otherwise noted)
ADG438F/ADG439F
–3–REV. D
ABSOLUTE MAXIMUM RATINGS*
(T
A
= +25°C unless otherwise noted)
V
DD
to V
SS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+44 V
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +25 V
V
SS
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –25 V
V
EN
, V
A
Digital Input . . . . . . . – 0.3 V to V
DD
+ 2 V or 20 mA,
Whichever Occurs First
V
S
, Analog Input Overvoltage with Power ON . . . . . V
SS
– 25 V
to V
DD
+ 40 V
V
S
, Analog Input Overvoltage with Power OFF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–40 V to +55 V
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 20 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle max) . . . . . . . . . . . 40 mA
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +105°C
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Plastic Package
θ
JA
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 117°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +260°C
SOIC Package
θ
JA
, Thermal Impedance
Narrow Body . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Wide Body . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
Table I. ADG438F Truth Table
A2 A1 A0 EN ON SWITCH
XXX0 NONE
00011
00112
01013
01114
10015
10116
11017
11118
X = Don’t Care
Table II. ADG439F Truth Table
A1 A0 EN ON SWITCH PAIR
X X 0 NONE
0011
0112
1013
1114
X = Don’t Care
ADG438F/ADG439F PIN CONFIGURATIONS
DIP/SOIC DIP/SOIC
A0
EN
A1
A2
S2
S3
S4
S5
S6
S7
S1
GND
V
DD
DS8
1
2
16
15
5
6
7
12
11
10
3
4
14
13
89
TOP VIEW
(Not to Scale)
ADG438F
V
SS
A0
EN
A1
GND
S2A
S3A
S4A
S2B
S3B
S4B
V
SS
S1A
V
DD
S1B
DA
DB
1
2
16
15
5
6
7
12
11
10
3
4
14
13
89
TOP VIEW
(Not to Scale)
ADG439F
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG438F/ADG439F features proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
ORDERING GUIDE
Model Temperature Range Package Option*
ADG438FBN –40°C to +105°C N-16
ADG438FBR –40°C to +105°C R-16N
ADG439FBN –40°C to +105°C N-16
ADG439FBR –40°C to +105°C R-16N
ADG439FBRW –40°C to +105°C R-16W
*N = Plastic DIP; R-16N = 0.15" Small Outline IC (SOIC); R-16W = 0.3"
Small Outline IC (SOIC).
WARNING!
ESD SENSITIVE DEVICE
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